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- Andreasson, Björn Pererik, 1979-, et al.
(författare)
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Origin of oxygen vacancies in resistive switching memory devices
- 2009
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Ingår i: Journal of Physics, Conference Series. - Bristol : Institute of Physics Publishing (IOPP). - 1742-6588 .- 1742-6596. ; 190, s. Article number: 012074-
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Tidskriftsartikel (refereegranskat)abstract
- The resistive switching state in Cr-doped SrTiO3 was induced by applying an electric field. This was done in ambient air and in an atmosphere of H2/Ar. The distribution of the thereby introduced oxygen vacancies was studied by spatially resolved X-ray fluorescence images. It was concluded that the oxygen vacancies were introduced in the interface between the SrTiO3 and the positively biased electrode. © 2009 IOP Publishing Ltd.
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