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| 2. |
- Schiller, D, et al.
(författare)
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The Human Affectome
- 2024
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Ingår i: Neuroscience and biobehavioral reviews. - 1873-7528. ; 158, s. 105450-
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Tidskriftsartikel (refereegranskat)
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| 3. |
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| 4. |
- Dluzewski, P., et al.
(författare)
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TEM determination of directions of (Ga,Mn)As nanowires grown by MBE on GaAs(001) substrates
- 2009
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Ingår i: Journal of Microscopy. - : Wiley. - 0022-2720. ; 236:2, s. 115-118
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Tidskriftsartikel (refereegranskat)abstract
- P>The structure of GaMnAs nanowires (NW) with nominal Mn concentration of up to 7 at% was investigated by transmission electron microscopy. The (Ga,Mn)As NW were grown on epiready GaAs(001) n-type wafers by molecular beam epitaxy. The crystal structure of the NW was determined to be zinc-blende. NW with Mn concentrations lower than 5 at% grow along the << 111 >> direction. NW with higher Mn concentrations grow along the << 110 >> direction and reveal a branching structure. The main nanowire and branches grow along the << 110 >> directions belonging to only one {111} plane.
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| 5. |
- Dynowska, E., et al.
(författare)
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Structural and magnetic properties of GaSb:MnSb granular layers
- 2011
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Ingår i: Radiation Physics and Chemistry. - : Elsevier BV. - 0969-806X. ; 80:10, s. 1051-1057
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Konferensbidrag (refereegranskat)abstract
- The results of structural and magnetic characterization of GaMnSb layers grown on GaSb(0 0 1) and GaAs(1 1 1) substrates are presented. The presence of hexagonal, highly oriented MnSb inclusions embedded in GaSb matrix has been demonstrated. The lattice parameters of these inclusions were the same as those for bulk MnSb for the layers grown on GaSb(1 0 0) substrate while for the layers grown on GaAs(1 1 1) the MnSb inclusions were strained. The influence of a presence of MnSb clusters on the lattice parameter of GaSb matrix has been demonstrated. It was confirmed that in all cases the MnSb clusters exhibit a ferromagnetic: behavior at room temperature. (C) 2011 Elsevier Ltd. All rights reserved.
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| 6. |
- Janik, E., et al.
(författare)
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ZnTe nanowires grown on GaAs(100) substrates by molecular beam epitaxy
- 2006
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 89:13
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Tidskriftsartikel (refereegranskat)abstract
- ZnTe nanowires with an average diameter of about 30 nm and lengths above 1 mu m were grown on GaAs(100) substrate by molecular beam epitaxy. The growth process was based on the Au-catalyzed vapor-liquid-solid mechanism. A thin gold layer (3-20 angstrom thick) annealed in high vacuum prior to the nanowire growth was used as a source of catalytic nanoparticles. The nanowires are inclined about 55 degrees to the (100) substrate surface normal. They have a zinc-blende crystal structure and their growth axis is < 111 >.
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| 7. |
- Kret, S., et al.
(författare)
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FIB Method of Sectioning of III-V Core-Multi-Shell Nanowires for Analysis of Core/Sell Interfaces by High Resolution TEM
- 2017
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Ingår i: Acta Physica Polonica. A. - : Polish Physical Society. - 0587-4246 .- 1898-794X. ; 131:5, s. 1332-1335
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Tidskriftsartikel (refereegranskat)abstract
- The core-multishell wurtzite structure (In, Ga) As-(Ga, Al) As-(Ga, Mn) As semiconductor nanowires have been successfully grown on GaAs(111) B substrates using MBE technique. The nanowires cores were grown with gold eutectic catalyser in vapour-liquid-solid growth mode. The double shell overgrowth, on the side facets of nanowires, was performed using lower substrate temperature (about 400 degrees C, and 230 degrees C, for (Ga, Al) As, and (Ga, Mn) As shell growth, respectively). The polytypic ordering, defects, chemistry and geometric perfection of the core and the shells have been analysed at atomic level by advanced transmission electron microscope techniques with the use of axial and longitudinal section of individual nanowires prepared by focused ion beam. High quality cross-sections suitable for quantitative transmission electron microscope analysis have been obtained and enabled analysis of interfaces between the core and the shells with near atomic resolution. All investigated shells are epitaxial without misfit dislocations at the interface. Some of the shells thicknesses are not symmetric, which is due to the shadowing effects of neighbouring nanowires and directional character of the elemental fluxes in the MBE growth process.
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| 8. |
- Kret, S., et al.
(författare)
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FIB method of sectioning of III–V core-multi-shell nanowires for analysis of core/sell interfaces by high resolution TEM
- 2017
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Ingår i: Acta Physica Polonica A. - 0587-4246. ; 131:5, s. 1332-1335
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Tidskriftsartikel (refereegranskat)abstract
- The core-multishell wurtzite structure (In,Ga)As–(Ga,Al)As–(Ga,Mn)As semiconductor nanowires have been successfully grown on GaAs(111)B substrates using MBE technique. The nanowires cores were grown with gold eutectic catalyser in vapour–liquid–solid growth mode. The double shell overgrowth, on the side facets of nanowires, was performed using lower substrate temperature (about 400 ◦C, and 230 ◦C, for (Ga,Al)As, and (Ga,Mn)As shell growth, respectively). The polytypic ordering, defects, chemistry and geometric perfection of the core and the shells have been analysed at atomic level by advanced transmission electron microscope techniques with the use of axial and longitudinal section of individual nanowires prepared by focused ion beam. High quality cross-sections suitable for quantitative transmission electron microscope analysis have been obtained and enabled analysis of interfaces between the core and the shells with near atomic resolution. All investigated shells are epitaxial without misfit dislocations at the interface. Some of the shells thicknesses are not symmetric, which is due to the shadowing effects of neighbouring nanowires and directional character of the elemental fluxes in the MBE growth process.
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| 9. |
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| 10. |
- Sadowski, Janusz, et al.
(författare)
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Wurtzite (Ga,Mn)As nanowire shells with ferromagnetic properties
- 2017
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Ingår i: Nanoscale. - : Royal Society of Chemistry. - 2040-3364 .- 2040-3372. ; 9:6, s. 2129-2137
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Tidskriftsartikel (refereegranskat)abstract
- (Ga,Mn)As having a wurtzite crystal structure was coherently grown by molecular beam epitaxy on the 1100 side facets of wurtzite (Ga,In)As nanowires and further encapsulated by (Ga,Al)As and low temperature GaAs. For the first time, a truly long-range ferromagnetic magnetic order is observed in non-planar (Ga,Mn)As, which is attributed to a more effective hole confinement in the shell containing Mn by the proper selection/choice of both the core and outer shell materials. © The Royal Society of Chemistry.
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