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- Thompson, Michael D, et al.
(författare)
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Low Leakage-Current InAsSb Nanowire Photodetectors on Silicon.
- 2016
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Ingår i: Nano Letters. - : American Chemical Society (ACS). - 1530-6992 .- 1530-6984. ; 16:1, s. 182-187
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Tidskriftsartikel (refereegranskat)abstract
- Axially doped p-i-n InAs0.93Sb0.07 nanowire arrays have been grown on Si substrates and fabricated into photodetectors for shortwave infrared detection. The devices exhibit a leakage current density around 2 mA/cm(2) and a 20% cutoff of 2.3 μm at 300 K. This record low leakage current density for InAsSb based devices demonstrates the suitability of nanowires for the integration of III-V semiconductors with silicon technology.
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