| 1. |
- Beleckaite, I., et al.
(författare)
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Characterization of non-vertically aligned semiconductor nanowires by THz emission measurements
- 2016
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Ingår i: 41st International Conference on Infrared, Millimeter and Terahertz Waves, IRMMW-THz 2016. - 9781467384858 ; 2016-November
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Konferensbidrag (refereegranskat)abstract
- In this work terahertz (THz) pulse emission of the non-vertically aligned GaAs core-shell nanowires (NWs) is investigated. THz emission azimuthal dependencies of different NW samples have been measured. It is shown that these measurements together with theoretical calculations could be a very promising method to determine the effective index of refraction (n0) of the NW ensemble. The measurement of azimuthal dependencies are confirmed to be a much more sensitive way for measuring n0 than traditional THz TDS method.
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| 2. |
- Krotkus, A., et al.
(författare)
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Be-doped low-temperature-grown GaAs material for optoelectronic switches
- 2002
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Ingår i: IEE Proceedings - Optoelectronics. - : Institution of Engineering and Technology (IET). - 1350-2433 .- 1359-7078. ; 149:3, s. 111-115
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Tidskriftsartikel (refereegranskat)abstract
- Structural, electrical and recombination properties of Be-doped low-temperature MBE grown (LTG) GaAs have been investigated by using a number of different experimental techniques. These properties were analysed with respect to the applications of LTG GaAs in ultrafast optoelectronic devices. It has been found that a moderate Be-doping improves the structural quality of the layers and does not affect their semi-insulating behaviour. Electron and hole capture cross-sections, critical parameters for the design of optoelectronic devices from LTG GaAs, equal to sigma(n) = 1.1 x 10(-13) and sigma(p) = 1.8 x 10(-15) cm(2) were also determined.
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| 3. |
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| 4. |
- Bertulis, K., et al.
(författare)
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GaBiAs : A material for optoelectronic terahertz devices
- 2006
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 88:20
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Tidskriftsartikel (refereegranskat)abstract
- GaBiAs layers have been grown by molecular beam epitaxy at low (270-330 degrees C) temperatures and were characterized by several experimental techniques. It was shown that the spectral photosensitivity cutoff wavelength reaches similar to 1.4 mu m when the growth temperature is as low as 280 degrees C. Optical pump-terahertz probe measurements made on these layers have evidenced that the electron trapping time decreases with decreasing growth temperature from 20 to about 1 ps. GaBiAs layers were used for manufacturing photoconductive terahertz emitters and detectors, which, when excited with Ti:sapphire laser pulses, have demonstrated a signal bandwidth of 3 THz.
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| 5. |
- Krotkus, A., et al.
(författare)
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Electric field probing by picosecond laser pulses
- 1992
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Ingår i: Electronics Letters. - UK : Institution of Electrical Engineers (IEE). - 0013-5194 .- 1350-911X. ; 28:12, s. 1137-1138
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Tidskriftsartikel (refereegranskat)
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| 6. |
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| 7. |
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| 8. |
- Marcinkevicius, Saulius, et al.
(författare)
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Influence of annealing on carrier dynamics in As ion-implanted epitaxially lifted-off GaAs layers
- 2000
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 76:10, s. 1306-1308
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Tidskriftsartikel (refereegranskat)abstract
- Electrical and dynamical optical characterization of As-ion implanted and annealed GaAs has been performed. Changes of physical properties induced by annealing have been studied in detail by using layers annealed in small steps in the temperature range 500-700 degrees C. The carrier trapping rate increases exponentially with increase of inverse annealing temperature indicating that in ion-implanted GaAs ultrafast carrier capture occurs to the same trapping centers as in low-temperature-grown GaAs. Relatively large resistivity and electron mobility in As-implanted GaAs have been observed after annealing, which shows that this material possesses properties required for a variety of ultrafast optoelectronic applications.
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