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- Hofmann, T., et al.
(författare)
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Temperature dependent effective mass in AlGaN/GaN high electron mobility transistor structures
- 2012
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Ingår i: Applied Physics Letters. - : American Institute of Physics (AIP). - 0003-6951 .- 1077-3118. ; 101:19
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Tidskriftsartikel (refereegranskat)abstract
- The temperature-dependence of free-charge carrier mobility, sheet density, and effective mass of a two-dimensional electron gas in a AlGaN/GaN heterostructure deposited on SiC substrate is determined using the THz optical Hall effect in the spectral range from 0.22 to 0.32 THz for temperatures from 1.5 to 300 K. The THz optical Hall-effect measurements are combined with room temperature mid-infrared spectroscopic ellipsometry measurements to determine the layer thickness, phonon mode, and free-charge carrier parameters of the heterostructure constituents. An increase of the electron effective mass from (0.22 +/- 0.01)m(0) at 1.5 K to (0.36 +/- 0.03)m(0) at 300 K is observed, which is indicative for a reduction in spatial confinement of the two-dimensional electron gas at room temperature. The temperature-dependence of the mobility and the sheet density is in good agreement with electrical measurements reported in the literature.
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- Kuehne, P, et al.
(författare)
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Polarization Selection Rules for Inter-Landau-Level Transitions in Epitaxial Graphene Revealed by the Infrared Optical Hall Effect
- 2013
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Ingår i: Physical Review Letters. - : American Physical Society. - 0031-9007 .- 1079-7114. ; 111:7, s. e077402-
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Tidskriftsartikel (refereegranskat)abstract
- We report on the polarization selection rules of inter-Landau-level transitions using reflection-type optical Hall effect measurements from 600 to 4000 cm-1 on epitaxial graphene grown by thermal decomposition of silicon carbide. We observe symmetric and antisymmetric signatures in our data due to polarization preserving and polarization mixing inter-Landau-level transitions, respectively. From field-dependent measurements, we identify that transitions in coupled graphene monolayers are governed by polarization mixing selection rules, whereas transitions in decoupled graphene monolayers are governed by polarization preserving selection rules. The selection rules may find explanation by different coupling mechanisms of inter-Landau-level transitions with free charge carrier magneto-optic plasma oscillations.
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- Lindim, Claudia, et al.
(författare)
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Model-predicted occurrence of multiple pharmaceuticals in Swedish surface waters and their flushing to the Baltic Seat
- 2017
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Ingår i: Environmental Pollution. - : Elsevier BV. - 0269-7491 .- 1873-6424. ; 223, s. 595-604
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Tidskriftsartikel (refereegranskat)abstract
- An exposure assessment for multiple pharmaceuticals in Swedish surface waters was made using the STREAM-EU model. Results indicate that Metformin (27 ton/y), Paracetamol (6.9 ton/y) and Ibuprofen (2.33 ton/y) were the drugs with higher amounts reaching the Baltic Sea in 2011. 35 of the studied substances had more than 1 kg/y of predicted flush to the sea. Exposure potential given by the ratio amount of the drug exported to the sea/amount emitted to the environment was higher than 50% for 7 drugs (Piperacillin, Lorazepam, Metformin, Hydroxycarbamide, Hydrochlorothiazide, Furosemide and Cetirizine), implying that a high proportion of them will reach the sea, and below 10% for 27 drugs, implying high catchment attenuation. Exposure potentials were found to be dependent of persistency and hydrophobicity of the drugs. Chemicals with Log D > 2 had exposure potentials <10% regardless of their persistence. Chemicals with Log D < 2 had exposure potentials >35% with higher ratios typically achieved for longer half-lives. For Stockholm urban area, 17 of the 54 pharmaceuticals studied had calculated concentrations higher than 10 ng/L. Model agreement with monitored values had an r(2) = 0.62 for predicted concentrations and an r2 = 0.95 for predicted disposed amounts to sea.
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- Refojo, Damian, et al.
(författare)
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Glutamatergic and Dopaminergic Neurons Mediate Anxiogenic and Anxiolytic Effects of CRHR1
- 2011
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Ingår i: Science. - : American Association for the Advancement of Science (AAAS). - 0036-8075 .- 1095-9203. ; 333:6051, s. 1903-1907
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Tidskriftsartikel (refereegranskat)abstract
- The corticotropin-releasing hormone receptor 1 (CRHR1) critically controls behavioral adaptation to stress and is causally linked to emotional disorders. Using neurochemical and genetic tools, we determined that CRHR1 is expressed in forebrain glutamatergic and gamma-aminobutyric acid-containing (GABAergic) neurons as well as in midbrain dopaminergic neurons. Via specific CRHR1 deletions in glutamatergic, GABAergic, dopaminergic, and serotonergic cells, we found that the lack of CRHR1 in forebrain glutamatergic circuits reduces anxiety and impairs neurotransmission in the amygdala and hippocampus. Selective deletion of CRHR1 in midbrain dopaminergic neurons increases anxiety-like behavior and reduces dopamine release in the prefrontal cortex. These results define a bidirectional model for the role of CRHR1 in anxiety and suggest that an imbalance between CRHR1-controlled anxiogenic glutamatergic and anxiolytic dopaminergic systems might lead to emotional disorders.
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- Schoeche, S, et al.
(författare)
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Electron effective mass in Al0.72Ga0.28N alloys determined by mid-infrared optical Hall effect
- 2013
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Ingår i: Applied Physics Letters. - : American Institute of Physics (AIP). - 0003-6951 .- 1077-3118. ; 103:21, s. 212107-
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Tidskriftsartikel (refereegranskat)abstract
- The effective electron mass parameter in Si-doped Al0.72Ga0.28N is determined to be m* = (0.336 +/- 0.020) m(0) from mid-infrared optical Hall effect measurements. No significant anisotropy of the effective electron mass parameter is found supporting theoretical predictions. Assuming a linear change of the effective electron mass with the Al content in AlGaN alloys and m* = 0.232m(0) for GaN, an average effective electron mass of m* = 0.376m(0) can be extrapolated for AlN. The analysis of mid-infrared spectroscopic ellipsometry measurements further confirms the two phonon mode behavior of the E-1(TO) and one phonon mode behavior of the A(1)(LO) phonon mode in high-Al-content AlGaN alloys as seen in previous Raman scattering studies.
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