| 1. |
- Azarov, A. Yu, et al.
(författare)
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Annealing of ion implanted CdZnO
- 2012
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Ingår i: Journal of Physics D. - : IOP Publishing. - 0022-3727 .- 1361-6463. ; 45:23, s. 235304-
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Tidskriftsartikel (refereegranskat)abstract
- We have studied the effect of the Cd content on the recovery of ion-induced damage in wurtzite CdxZn1-xO (x <= 0.05) films and compared with that in pure wurtzite ZnO and rock-salt CdO.200 keV Au+ and 55 keV Ar+ ion implants were performed at room temperature in the dose range of 5 x 1014-6.5 x 1015 cm-2. Rutherford backscattering/channelling spectrometry was used to characterize the damage evolution in the course of annealing (600-900 degrees C in air). A complex defect annealing behaviour is revealed in CdZnO as a function of annealing temperature, Cd content and ion dose. In particular, defects in the low dose implanted CdZnO films can be effectively removed at 800 degrees C, while the high dose implantation results in the formation of defects stable at least up to 900 degrees C. Moreover, annealing of the CdZnO films is accompanied by Cd loss at the surface for temperatures exceeding 800 degrees C. In contrast, CdO exhibits a typical damage accumulation behaviour for metals and semiconductors with high degree of ionicity, resulting in saturation and extended defect formation at high ion doses. These extended defects in pure ZnO and CdO, formed either directly during implantation or by reconstruction during post-implant annealing, are substantially more stable compared with small defects which can be efficiently removed at 700 degrees C and 600 degrees C for ZnO and CdO, respectively.
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| 2. |
- Azarov, A. Yu., et al.
(författare)
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Damage accumulation and annealing behavior in high fluence implanted MgZnO
- 2012
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Ingår i: Nuclear Instruments and Methods in Physics Research Section B. - : Elsevier BV. - 0168-583X .- 1872-9584. ; 272, s. 426-429
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Tidskriftsartikel (refereegranskat)abstract
- Molecular beam epitaxy grown MgxZn1-xO (x <= 0.3) layers were implanted at room temperature with 150 keV Er-166(+) ions in a fluence range of 5 x 10(15-)3 x 10(16) cm(-2). Evolution of ion-induced damage and structural changes were studied by a combination of Rutherford backscattering spectrometry, nuclear reaction analysis and time-of-flight elastic recoil detection analysis. Results show that damage production enhances in both Zn- and O-sublattices with increasing the Mg content in the MgZnO. However, MgZnO as well as pure ZnO exhibits a high degree of dynamic annealing and MgZnO can not be amorphized even at the highest ion fluence used. Annealing of heavily damaged ZnO leads to a strong surface erosion and thinning of the film. Increasing the Mg content suppresses the surface evaporation in high fluence implanted MgZnO but leads to a strong surface decomposition accompanied with a Mg-rich surface layer formation during post-implantation annealing.
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| 3. |
- Azarov, A. Yu., et al.
(författare)
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Effect of composition on damage accumulation in ternary ZnO-based oxides implanted with heavy ions
- 2010
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Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 108:3, s. 033509-
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Tidskriftsartikel (refereegranskat)abstract
- Thin films of wurtzite MgxZn1-xO (x <= 0.3) grown by molecular beam epitaxy and wurtzite CdxZn1-xO (x <= 0.05) grown by metal organic chemical vapor deposition were implanted at room temperature with 150 keV Er+ ions and 200 keV Au+ ions in a wide dose range. Damage accumulation was studied by Rutherford backscattering/channeling spectrometry. Results show that the film composition affects the damage accumulation behavior in both MgZnO and CdZnO dramatically. In particular, increasing the Mg content in MgZnO results in enhanced damage accumulation in the region between the bulk and surface damage peaks characteristically distinguished in the pure ZnO. However, the overall damage accumulation in MgZnO layers, as well as in pure ZnO, exhibits saturation with increasing ion dose and MgZnO cannot be amorphized even at the highest ion dose used (3 X 10(16) Er/cm(2)). Increasing the Cd content in CdZnO affects the saturation stage of the damage accumulation and leads to an enhancement of damage production in both Cd and Zn sublattices. (C) 2010 American Institute of Physics. [doi:10.1063/1.3467532]
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| 4. |
- Azarov, A. Yu, et al.
(författare)
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Effect of implanted species on thermal evolution of ion-induced defects in ZnO
- 2014
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Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 115:7, s. 073512-
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Tidskriftsartikel (refereegranskat)abstract
- Implanted atoms can affect the evolution of ion-induced defects in radiation hard materials exhibiting a high dynamic annealing and these processes are poorly understood. Here, we study the thermal evolution of structural defects in wurtzite ZnO samples implanted at room temperature with a wide range of ion species (from B-11 to Bi-209) to ion doses up to 2 x 10(16) cm(-2). The structural disorder was characterized by a combination of Rutherford backscattering spectrometry, nuclear reaction analysis, and transmission electron microscopy, while secondary ion mass spectrometry was used to monitor the behavior of both the implanted elements and residual impurities, such as Li. The results show that the damage formation and its thermal evolution strongly depend on the ion species. In particular, for F implanted samples, a strong out-diffusion of the implanted ions results in an efficient crystal recovery already at 600 degrees C, while co-implantation with B (via BF2) ions suppresses both the F out-diffusion and the lattice recovery at such low temperatures. The damage produced by heavy ions (such as Cd, Au, and Bi) exhibits a two-stage annealing behavior where efficient removal of point defects and small defect clusters occurs at temperatures similar to 500 degrees C, while the second stage is characterized by a gradual and partial annealing of extended defects. These defects can persist even after treatment at 900 degrees C. In contrast, the defects produced by light and medium mass ions (O, B, and Zn) exhibit a more gradual annealing with increasing temperature without distinct stages. In addition, effects of the implanted species may lead to a nontrivial defect evolution during the annealing, with N, Ag, and Er as prime examples. In general, the obtained results are interpreted in terms of formation of different dopant-defect complexes and their thermal stability.
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| 5. |
- Azarov, A. Yu., et al.
(författare)
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Structural damage in ZnO bombarded by heavy ions
- 2010
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Ingår i: Vacuum. - : Elsevier BV. - 0042-207X .- 1879-2715. ; 84:8, s. 1058-1061
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Tidskriftsartikel (refereegranskat)abstract
- The effect of implantation parameters on damage build-up in ZnO bombarded with Bi and Er ions is studied by Rutherford backscattering/channelling spectrometry. The results show that the damage accumulation behaviour in ZnO is different dramatically from that in other semiconductors. In particular, a variation of implantation parameters, such as collision cascade density, sample temperature and ion flux, has only a minor influence on the damage accumulation in the crystal bulk for the case of such heavy ions. Moreover, an intermediate damage peak, between the surface and bulk defect peaks, is observed for all the irradiation conditions studied. The cascade density affects the behaviour of this intermediate peak with increasing ion dose.
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| 6. |
- Azarov, A. Yu., et al.
(författare)
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Thermally induced surface instability in ion-implanted Mg(x)Zn(1-x)O films
- 2011
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 84:1, s. 014114-
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Tidskriftsartikel (refereegranskat)abstract
- Thermal stability of originally single crystalline wurtzite Mg(x)Zn(1-x)O (x <= 0.3) films implanted at room temperature with (166)Er ions is studied by a combination of Rutherford backscattering spectrometry, time-of-flight elastic recoil detection analysis, x-ray diffraction analysis, and atomic force microscopy. The MgZnO films exhibit a complex behavior during postimplantation annealing associated with compositional changes and surface erosion in addition to Er accumulation at the surface. The importance of these processes depends on the Mg content, annealing temperature, and amount of implantation damage. Specifically, increases in the Mg content as well as the implantation damage enhance the compositional changes in the near-surface region and give rise to altered stoichiometry and Mg-enriched phase separation. In its turn, the rate of surface erosion in MgZnO under the thermal treatment depends on temperature, MgZnO composition, and the amount of implantation damage nontrivially, which is attributed to the compositional changes in the near-surface region assisted by the implantation damage.
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| 7. |
- Liang, H. L., et al.
(författare)
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Growth of single-phase Mg0.3Zn0.7O films suitable for solar-blind optical devices on RS-MgO substrates
- 2012
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Ingår i: Thin Solid Films. - : Elsevier BV. - 0040-6090 .- 1879-2731. ; 520:6, s. 1705-1708
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Tidskriftsartikel (refereegranskat)abstract
- Single-phase rock-salt Mg0.3Zn0.7O film was fabricated on MgO (100) substrate by radio-frequency plasma assisted molecular beam epitaxy. A smooth surface was observed by in-situ reflection high-energy electron diffraction and ex-situ atomic force microscopy. X-ray diffraction characterization demonstrated a high-quality single-phase structure with highly (200) orientation and cube-on-cube epitaxial relationship. Zn fraction in the single-phase rock-salt Mg0.3Zn0.7O film was determined by Rutherford backscattering spectrometry. Optical property of the film was investigated by reflectance spectroscopy, which indicated a solar-blind band gap of 255.5 nm. The reason why Zn solubility limit is greatly enhanced in non-polar (100) film compared with (111) polar epilayer is tentatively discussed in this work, suggesting MgO (100) is more suitable for the synthesis of single-phase rock-salt MgZnO with high Zn content towards solar-blind opto-device applications.
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| 8. |
- Liang, H. L., et al.
(författare)
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High Zn content single-phase RS-MgZnO suitable for solar-blind frequency applications
- 2010
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Ingår i: 2010 Wide Bandgap Cubic Semiconductors. - : American Institute of Physics (AIP). - 9780735408470 ; , s. 185-190
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Konferensbidrag (refereegranskat)abstract
- Single-phase rock-salt MgZnO films with high Zn content were successfully fabricated on the templates of MgO (111)/α-sapphire (0001) by radio-frequency plasma assisted molecular beam epitaxy. The influence of growth temperature on epitaxy of MgZnO alloy films was investigated by the combined studies of crystal structures, compositions, and optical properties. It is found that the incorporation of Zn atoms into the rock-salt MgZnO films is greatly enhanced at low temperature, confirmed by in-situ reflection high-energy electron diffraction observations and ex-situ X-ray diffraction characterization. Zn fraction in the single-phase rock-salt Mg 0.53Zn0.47O film was determined by Rutherford backscattering spectrometry. Optical properties of the films were investigated by transmittance spectroscopy and reflectance spectroscopy, both of which demonstrate the solar-blind band gap and its dependence on Zn content.
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| 9. |
- Ayedh, H. M., et al.
(författare)
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Carbon vacancy control in p(+)-n silicon carbide diodes for high voltage bipolar applications
- 2021
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Ingår i: Journal of Physics D. - : IOP Publishing. - 0022-3727 .- 1361-6463. ; 54:45
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Tidskriftsartikel (refereegranskat)abstract
- Controlling the carbon vacancy (V-C) in silicon carbide (SiC) is one of the major remaining bottleneck in manufacturing of high voltage SiC bipolar devices, because V-C provokes recombination levels in the bandgap, offensively reducing the charge carrier lifetime. In literature, prominent V-C evolutions have been measured by capacitance spectroscopy employing Schottky diodes, however the trade-offs occurring in the p(+)-n diodes received much less attention. In the present work, applying similar methodology, we showed that V-C is re-generated to its unacceptably high equilibrium level at similar to 2 x10(13) V-C cm(-3) by 1800 degrees C anneals required for the implanted acceptor activation in the p(+)-n components. Nevertheless, we have also demonstrated that the V-C eliminating by thermodynamic equilibrium anneals at 1500 degrees C employing carbon-cap can be readily integrated into the p(+)-n components fabrication resulting in <= 10(11) V-C cm(-3), potentially paving the way towards the realization of the high voltage SiC bipolar devices.
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| 10. |
- Azarov, Alexander, et al.
(författare)
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Dopant incorporation in thin strained Si layers implanted with Sb
- 2010
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Ingår i: Thin Solid Films. - : Elsevier BV. - 0040-6090 .- 1879-2731. ; 518:9, s. 2474-2477
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Tidskriftsartikel (refereegranskat)abstract
- The effect of tensile strain on Sb incorporation in Si and its activation during post-implantation annealing has been Studied by a combination of Rutherford backscattering/channeling spectrometry, secondary ion mass spectrometry. X-ray diffraction and 4-point probe measurements Our results show that, for Sb implanted samples a tensile strain has an important role for dopant behavior Particularly, increasing the tensile strain in the Si layer from 0 to 0 8% leads to an enhancement of the fraction of incorporated Sb atoms in substitutional sites already during implantation from similar to 7 to 30% Furthermore, 0 8% strain in antimony doped Si gives similar to 20% reduction in the sheet resistance in comparison to the unstrained sample.
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