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Sökning: WFRF:(Kwasniewski M)

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1.
  • Butler-Laporte, G, et al. (författare)
  • Exome-wide association study to identify rare variants influencing COVID-19 outcomes: Results from the Host Genetics Initiative
  • 2022
  • Ingår i: PLoS genetics. - : Public Library of Science (PLoS). - 1553-7404 .- 1553-7390. ; 18:11, s. e1010367-
  • Tidskriftsartikel (refereegranskat)abstract
    • Host genetics is a key determinant of COVID-19 outcomes. Previously, the COVID-19 Host Genetics Initiative genome-wide association study used common variants to identify multiple loci associated with COVID-19 outcomes. However, variants with the largest impact on COVID-19 outcomes are expected to be rare in the population. Hence, studying rare variants may provide additional insights into disease susceptibility and pathogenesis, thereby informing therapeutics development. Here, we combined whole-exome and whole-genome sequencing from 21 cohorts across 12 countries and performed rare variant exome-wide burden analyses for COVID-19 outcomes. In an analysis of 5,085 severe disease cases and 571,737 controls, we observed that carrying a rare deleterious variant in the SARS-CoV-2 sensor toll-like receptor TLR7 (on chromosome X) was associated with a 5.3-fold increase in severe disease (95% CI: 2.75–10.05, p = 5.41x10-7). This association was consistent across sexes. These results further support TLR7 as a genetic determinant of severe disease and suggest that larger studies on rare variants influencing COVID-19 outcomes could provide additional insights.
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2.
  • Gogova, D., et al. (författare)
  • HVPE GaN substrates : growth and characterization
  • 2010
  • Ingår i: Physica Status Solidi. C, Current topics in solid state physics. - : Wiley. - 1610-1634 .- 1610-1642. ; 7:7-8, s. 1756-1759
  • Tidskriftsartikel (refereegranskat)abstract
    • GaN substrates with low dislocation densities were prepared by halide vapor-phase epitaxy (HVPE) on c-plane sapphire and by means of a post-growth laser-induced lift-off or natural stress-induced (self-) separation process. The HVPE growth on InGaN/GaN buffer layers and subsequent self-separation method was seen as advantageous, in comparison with the laser-induced lift-off one, in terms of lower cost and better crystalline quality of the GaN material obtained. (© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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