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Sökning: WFRF:(Löffler Markus)

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1.
  • Alexander, Naomi E., et al. (författare)
  • IMAGINE project : A low cost, high performance, monolithic passive mm-wave imager front-end
  • 2012
  • Ingår i: Proceedings of SPIE - The International Society for Optical Engineering. - : SPIE. - 0277-786X .- 1996-756X. - 9780819492852
  • Konferensbidrag (refereegranskat)abstract
    • The FP7 Research for SME project IMAGINE - a low cost, high performance monolithic passive mm-wave imager front-end is described in this paper. The main innovation areas for the project are: i) the development of a 94 GHz radiometer chipset and matching circuits suitable for monolithic integration. The chipset consists of a W-band low noise amplifier, fabricated using the commercially available OMMIC D007IH GaAs mHEMT process, and a zero bias resonant interband tunneling diode, fabricated using a patented epi-layer structure that is lattice matched to the same D007IH process; ii) the development of a 94 GHz antenna adapted for low cost manufacturing methods with performance suitable for real-time imaging; iii) the development of a low cost liquid crystal polymer PCB build-up technology with performance suitable for the integration and assembly of a 94 GHz radiometer module; iv) the assembly of technology demonstrator modules. The results achieved in these areas are presented.
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2.
  • Huhn, Stefanie, et al. (författare)
  • Coding variants in NOD-like receptors : An association study on risk and survival of colorectal cancer
  • 2018
  • Ingår i: PLoS ONE. - : Public Library of Science (PLoS). - 1932-6203. ; 13:6
  • Tidskriftsartikel (refereegranskat)abstract
    • Nod-like receptors (NLRs) are important innate pattern recognition receptors and regulators of inflammation or play a role during development. We systematically analysed 41 non-synonymous single nucleotide polymorphisms (SNPs) in 21 NLR genes in a Czech discovery cohort of sporadic colorectal cancer (CRC) (1237 cases, 787 controls) for their association with CRC risk and survival. Five SNPs were found to be associated with CRC risk and eight with survival at 5% significance level. In a replication analysis using data of two large genome-wide association studies (GWASs) from Germany (DACHS: 1798 cases and 1810 controls) and Scotland (2210 cases and 9350 controls) the associations found in the Czech discovery set were not confirmed. However, expression analysis in human gut-related tissues and immune cells revealed that the NLRs associated with CRC risk or survival in the discovery set were expressed in primary human colon or rectum cells, CRC tissue and/or cell lines, providing preliminary evidence for a potential involvement of NLRs in general in CRC development and/or progression. Most interesting was the finding that the enigmatic development-related NLRP5 (also known as MATER) was not expressed in normal colon tissue but in colon cancer tissue and cell lines. Future studies may show whether regulatory variants instead of coding variants might affect the expression of NLRs and contribute to CRC risk and survival.
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3.
  • Lockhart de la Rosa, César Javier, 1987, et al. (författare)
  • Frame assisted H2O electrolysis induced H2 bubbling transfer of large area graphene grown by chemical vapor deposition on Cu
  • 2013
  • Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 102:2
  • Tidskriftsartikel (refereegranskat)abstract
    • An improved technique for transferring large area graphene grown by chemical vapor deposition on copper is presented. It is based on mechanical separation of the graphene/copper by H-2 bubbles during H2O electrolysis, which only takes a few tens of seconds while leaving the copper cathode intact. A semi-rigid plastic frame in combination with thin polymer layer span on graphene gives a convenient way of handling-and avoiding wrinkles and holes in graphene. Optical and electrical characterizations prove the graphene quality is better than that obtained by traditional wet etching transfer. This technique appears to be highly reproducible and cost efficient.
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4.
  • Löffler, Markus, 1980, et al. (författare)
  • Adhesion layer-bottom electrode interaction during BaxSr1−xTiO3 growth as a limiting factor for device performance
  • 2012
  • Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 111:12, s. Art. no. 124514-
  • Tidskriftsartikel (refereegranskat)abstract
    • Changes in bottom electrode morphology and adhesion layer composition upon deposition of BaxSr1-xTiO3 (BSTO) at elevated temperatures have been found, which have a negative impact on acoustic wave resonator device performance. The difference between nominal and actual adhesion layer composition are explained by grain boundary diffusion of Ti or W and their oxidation by in-diffusing oxygen, which leads to an increased interface roughness between the Pt bottom electrode and the BSTO. It is shown, that room-temperature deposited TiO2 diffusion barriers fail to protect against Ti oxidation and diffusion. Also W adhesion layers are prone to this phenomenon, which limits their ability to act as high temperature resistant adhesion layers for bottom electrodes for ferroelectric thin films.
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5.
  • Mathey, Carina M, et al. (författare)
  • Molecular Genetic Screening in Patients With ACE Inhibitor/Angiotensin Receptor Blocker-Induced Angioedema to Explore the Role of Hereditary Angioedema Genes
  • 2022
  • Ingår i: Frontiers in Genetics. - : Frontiers Media S.A.. - 1664-8021. ; 13
  • Tidskriftsartikel (refereegranskat)abstract
    • Angioedema is a relatively rare but potentially life-threatening adverse reaction to angiotensin-converting enzyme inhibitors (ACEi) and angiotensin receptor blockers (ARBs). As with hereditary forms of angioedema (HAE), this adverse reaction is mediated by bradykinin. Research suggests that ACEi/ARB-induced angioedema has a multifactorial etiology. In addition, recent case reports suggest that some ACEi/ARB-induced angioedema patients may carry pathogenic HAE variants. The aim of the present study was to investigate the possible association between ACEi/ARB-induced angioedema and HAE genes via systematic molecular genetic screening in a large cohort of ACEi/ARB-induced angioedema cases. Targeted re-sequencing of five HAE-associated genes (SERPING1, F12, PLG, ANGPT1, and KNG1) was performed in 212 ACEi/ARB-induced angioedema patients recruited in Germany/Austria, Sweden, and Denmark, and in 352 controls from a German cohort. Among patients, none of the identified variants represented a known pathogenic variant for HAE. Moreover, no significant association with ACEi/ARB-induced angioedema was found for any of the identified common [minor allele frequency (MAF) >5%] or rare (MAF < 5%) variants. However, several non-significant trends suggestive of possible protective effects were observed. The lowest p-value for an individual variant was found in PLG (rs4252129, p.R523W, p = 0.057, p.adjust > 0.999, Fisher's exact test). Variant p.R523W was found exclusively in controls and has previously been associated with decreased levels of plasminogen, a precursor of plasmin which is part of a pathway directly involved in bradykinin production. In addition, rare, potentially functional variants (MAF < 5%, Phred-scaled combined annotation dependent depletion score >10) showed a nominally significant enrichment in controls both: 1) across all five genes; and 2) in the F12 gene alone. However, these results did not withstand correction for multiple testing. In conclusion, our results suggest that HAE-associated mutations are, at best, a rare cause of ACEi/ARB-induced angioedema. Furthermore, we were unable to identify a significant association between ACEi/ARB-induced angioedema and other variants in the investigated genes. Further studies with larger sample sizes are warranted to draw more definite conclusions concerning variants with limited effect sizes, including protective variants.
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6.
  • Sporrer, Lukas, et al. (författare)
  • Near IR Bandgap Semiconducting 2D Conjugated Metal-Organic Framework with Rhombic Lattice and High Mobility
  • 2023
  • Ingår i: Angewandte Chemie International Edition. - : Wiley. - 1433-7851 .- 1521-3773. ; 62:25
  • Tidskriftsartikel (refereegranskat)abstract
    • Two-dimensional conjugated metal–organic frameworks (2D c-MOFs) are emerging as a unique class of electronic materials. However, 2D c-MOFs with band gaps in the Vis-NIR and high charge carrier mobility are rare. Most of the reported conducting 2D c-MOFs are metallic (i.e. gapless), which largely limits their use in logic devices. Herein, we design a phenanthrotriphenylene-based, D2h-symmetric π-extended ligand (OHPTP), and synthesize the first rhombic 2D c-MOF single crystals (Cu2(OHPTP)). The continuous rotation electron diffraction (cRED) analysis unveils the orthorhombic crystal structure at the atomic level with a unique slipped AA stacking. The Cu2(OHPTP) is a p-type semiconductor with an indirect band gap of ≈0.50 eV and exhibits high electrical conductivity of 0.10 S cm−1 and high charge carrier mobility of ≈10.0 cm2 V−1 s−1. Theoretical calculations underline the predominant role of the out-of-plane charge transport in this semiquinone-based 2D c-MOF.
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7.
  • Sun, Jie, 1977, et al. (författare)
  • Direct Chemical Vapor Deposition of Large-Area Carbon Thin Films on Gallium Nitride for Transparent Electrodes: A First Attempt
  • 2012
  • Ingår i: IEEE Transactions on Semiconductor Manufacturing. - : Institute of Electrical and Electronics Engineers (IEEE). - 0894-6507 .- 1558-2345. ; 25:3, s. 494-501
  • Tidskriftsartikel (refereegranskat)abstract
    • Direct formation of large-area carbon thin films on gallium nitride by chemical vapor deposition without metallic catalysts is demonstrated. A high flow of ammonia is used to stabilize the surface of the GaN (0001)/sapphire substrate during the deposition at 950 degrees C. Various characterization methods verify that the synthesized thin films are largely sp(2) bonded, macroscopically uniform, and electrically conducting. The carbon thin films possess optical transparencies comparable to that of exfoliated graphene. This paper offers a viable route toward the use of carbon-based materials for future transparent electrodes in III-nitride optoelectronics, such as GaN-based light emitting diodes and laser diodes.
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8.
  • Vorobiev, Andrei, 1963, et al. (författare)
  • Correlations between microstructure and Q-factor of tunable thin film bulk acoustic wave resonators
  • 2011
  • Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 110:5
  • Tidskriftsartikel (refereegranskat)abstract
    • Correlations between microstructure and Q-factor of tunable solidly mounted Ba(0.25)Sr(0.75)TiO(3) (BSTO) thin film bulk acoustic wave resonators are studied using analysis of test structures prepared at different growth temperatures of the BSTO films varying in the range 450-650 degrees C. The observed changes in the Q-factor with growth temperature are correlated with related changes in microstructure, including the grain size, texture misalignment, interfacial amorphous layer, surface roughness, and deterioration of the Bragg reflector layers. The correlations are established through analysis of corresponding extrinsic acoustic loss mechanisms, including Rayleigh scattering at localized defects, acoustic attenuation by amorphous layer, generation of the shear waves leaking into the substrate, waves scattering by surface roughness, and resonance broadening by local thickness variations. It is shown that the waves scattering by surface roughness at the BSTO film interfaces is the main loss mechanism limiting the Q-factor of the BSTO thin film bulk acoustic wave resonators. (C) 2011 American Institute of Physics. [doi:10.1063/1.3626939]
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9.
  • Vorobiev, Andrei, 1963, et al. (författare)
  • Effect of growth conditions on microstructure of BiFeO3-0.33BaTiO(3) films and performance of bulk acoustic wave resonators
  • 2014
  • Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 115:8
  • Tidskriftsartikel (refereegranskat)abstract
    • The effect of growth conditions on the microstructure of BiFeO3-0.33BaTiO(3) (BF-BT) films and the performance of bulk acoustic wave (BAW) resonators is analyzed using test structures with the BF-BT films grown at different positions relative to the plume axis in the pulsed laser deposition system. The BF-BT film grain size and surface roughness reveal a strong asymmetric surface distribution and decrease significantly in the film region facing the laser beam-plume interaction area. The (100) BF-BT texturing is enhanced in this film region. The variations in the BF-BT film microstructure result in corresponding variations of the BAW resonator performance. Their correlations are established using the model of the roughness induced attenuation of the reflected acoustic waves and theory of the dc field induced piezoelectric effect. The BAW resonators with the highest parameters are obtained in the BF-BT film region facing the laser beam-plume interaction area. The BAW resonators located in this film region reveal a mechanical Q-factor of 200 at 4.2GHz, an effective electromechanical coupling coefficient of 10% and a tunability of the series resonance frequency of 4.5%.
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10.
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