| 1. |
- Yoo, S. J. B., et al.
(författare)
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Spectral phase encoded time spread optical code division multiple access technology for next generation communication networks Invited
- 2007
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Ingår i: Journal of Optical Networking. - 1536-5379. ; 6:10, s. 1210-1227
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Tidskriftsartikel (refereegranskat)abstract
- We overview and summarize the progress of the spectral phase encoded time spreading (SPECTS) optical code division multiple access (O-CDMA) technology. Recent progress included a demonstration of a 320 Gbit/s (32-user x 10 Gbit/s) all-optical passive optical network testbed based on the SPECTS O-CDMA technology and a theoretical prediction of the spectral efficiency at 100% and above. In particular, InP-based integrated photonics allows implementation of SPECTS O-CDMA transmitters and receivers monolithically integrated on a chip. The integrated InP chip technology not only allows robust and compact configurations for practical and low-cost O-CDMA network deployments but also offers code reconfigurations at rapid rates for secure communication applications.
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| 2. |
- Dhanabalan, D., et al.
(författare)
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Studies on Schottky Barrier Diodes Fabricated using Single-Crystal Wafers of β-Ga2O3 Grown by the Optical Floating Zone Technique
- 2022
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Ingår i: Physica status solidi. B, Basic research. - : Wiley. - 0370-1972 .- 1521-3951. ; 259:2
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Tidskriftsartikel (refereegranskat)abstract
- β-Ga2O3 is one of the most promising wide-bandgap materials for optoelectronic applications as well as a conducting substrate for GaN-based device technologies. Single crystals of undoped β-Ga2O3 are grown by the optical floating zone technique utilizing compressed dry air as growth atmosphere. The properties of β-Ga2O3 are highly anisotropic. Optimization of the processing recipe for wafers along different orientations suitable for device development is conducted. Structural, optical, and electrical properties of the wafers are determined. Efforts are made to fabricate Schottky diodes based on Pt/Ti/Au–β-Ga2O3–Ti/Au device structures. Devices are fabricated on (−201) cut wafers. The device characteristics are discussed in detail.
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| 3. |
- Cheung, S. T. S., et al.
(författare)
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Monolithically integrated 10-GHz ring colliding pulse mode-locked laser for on-chip coherent communications
- 2012
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Ingår i: 2012 Conference on Lasers and Electro-Optics, CLEO 2012. ; , s. 6326206-
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Konferensbidrag (refereegranskat)abstract
- We report a 10-GHz ring resonator colliding pulse mode-locked (CPM) laser with tunable couplers for InP-based monolithically integrated optical coherent communication system applications. Optimization included adjusting the saturable absorber reverse bias, driving RF-frequency, and amplifier gain current. Hybrid mode-locking (HML) resulted in a minimal pulse width of 10.1ps for 6 nm spectral width.
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| 4. |
- Baek, J. H., et al.
(författare)
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10-GHz and 20-GHz channel spacing high-resolution AWGs on InP
- 2009
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Ingår i: IEEE Photonics Technology Letters. - 1041-1135 .- 1941-0174. ; 21:5, s. 298-300
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Tidskriftsartikel (refereegranskat)abstract
- This letter reports on 10-GHz and 20-GHz channel-spacing arrayed waveguide gratings (AWGs) based on InP technology. The dimensions of the AWGs are 6.8 × 8.2 mm2 and 5.0 × 6.0 mm2, respectively, and the devices show crosstalk levels of 12 dB for the 10-GHz and 17 dB for the 20-GHz AWG without any compensation for the phase errors in the arrayed waveguides. The root-mean-square phase errors for the center arrayed waveguides were characterized by using an optical vector network analyzer, and are 18° for the 10-GHz AWG and 28° for the 10-GHz AWG.
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| 5. |
- Darakchieva, Vanya, 1971-, et al.
(författare)
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Phonons in strained AlGaN/GaN superlattices
- 2007
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Ingår i: 6th International Symposium on Blue Laser and Light Emitting Diodes,2006. - Physica Status Solidi, vol C4 : WILEYVCH Verlag GmbH & Co. KGaA. ; , s. 170-
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Konferensbidrag (refereegranskat)
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| 6. |
- Fontaine, N. K., et al.
(författare)
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Determination of 20 GHz InP AWG phase errors by measurement of AWG pulse train
- 2007
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Ingår i: 2007 IEEE LEOS Annual Meeting Conference Proceedings. - : IEEE. - 142440925X - 9781424409259 ; , s. 725-726
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Konferensbidrag (refereegranskat)abstract
- The phase errors of a 20 GHz AWG fabricated on InP are determined by measuring the intensity and phase of the pulse train produced by the transmission of a short pulse through an AWG.
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| 7. |
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| 8. |
- Hammar, M., et al.
(författare)
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Topography dependent doping distribution in selectively regrown InP studied by scanning capacitance microscopy
- 1998
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 72:7, s. 815-817
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Tidskriftsartikel (refereegranskat)abstract
- We have used scanning capacitance microscopy (SCM) to study the dopant distribution in regrown InP with high sensitivity and spatial resolution. Sulfur or iron doped InP was selectively regrown around n-doped InP mesas using hydride vapor phase epitaxy, and the resulting structure was imaged in cross section by SCM. For calibration purposes, reference layers with known doping levels were grown directly on top of the region of interest. Dramatic variations in the carrier concentration around the mesa, as well as pronounced differences in the behavior of S and Fe are observed. We correlate these findings to the growth and doping incorporation mechanisms. © 1998 American Institute of Physics.
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| 9. |
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| 10. |
- Kjebon, Olle, 1960-, et al.
(författare)
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Two-section InGaAsP DBR-lasers at 1.55 mu;m wavelength with 31 GHz direct modulation bandwidth
- 1997
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Ingår i: Indium Phosphide and Related Materials, 1997., International Conference on. ; , s. 665-668
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Konferensbidrag (refereegranskat)abstract
- The small signal modulation response of two-section InGaAsP DBR-lasers at 1.55 mu;m wavelength was investigated. The response was fitted to a general transfer function and it was found that for almost all lasers the response could be described by a three pole model consisting of the laser response from the standard rate equations and an additional first order low pass roll-off. The lasers exhibited reduced damping and increased resonance frequency due to what we believe is detuned loading. This led to a maximum bandwidth of 30 GHz for lasers described by the three pole model. Some lasers exhibited an additional effect which we believe is cavity resonant enhancement of one of the modulation side-bands. This effect increased the maximum -3dB bandwidth to 31 GHz but could not be described by a three pole model
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