| 1. |
- Bertuccio, Giuseppe, et al.
(författare)
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Silicon carbide detector for laser-generated plasma radiation
- 2013
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Ingår i: Applied Surface Science. - : Elsevier. - 0169-4332 .- 1873-5584. ; 272, s. 128-131
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Tidskriftsartikel (refereegranskat)abstract
- We present the performance of a Silicon Carbide (SiC) detector in the acquisition of the radiation emittedby laser generated plasmas. The detector has been employed in time of flight (TOF) configuration withinan experiment performed at the Prague Asterix Laser System (PALS). The detector is a 5 mm2 area 100 nmthick circular Ni SiC Schottky junction on a high purity 4H-SiC epitaxial layer 115 μm thick. Currentsignals from the detector with amplitudes up to 1.6 A have been measured, achieving voltage signals over 80 V on a 50 Ω load resistance with excellent signal to noise ratios. Resolution of few nanoseconds hasbeen experimentally demonstrated in TOF measurements. The detector has operated at 250 V DC biasunder extreme operating conditions with no observable performance degradation.
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| 2. |
- Bertuccio, Giuseppe, et al.
(författare)
-
Silicon Carbide X-Ray Detectors Operating at Room and High Temperature
- 2014
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Konferensbidrag (refereegranskat)abstract
- Silicon Carbide (SiC) is a wide bandgap semiconductor with attractive physical properties for manufacturing X-ray detectors [1]. The density of SiC crystal allow an X‑ray absorption similar to Silicon. The wide bandgap of SiC (3.2 eV) allows to make high Schottky barriers and minimises the reverse current from thermal generation of charge carriers. The SiC breakdown field (2 MV/cm) and the high saturation velocities of the charge carriers (200 mm/ns) make the detector response very fast and not affected by charge trapping degradation.In this talk, we present the SiC X-ray detectors we have developed. The detectors show leakage current densities as low as J=0.1 pA/cm2 at +25°C, three orders of magnitude lower than those of the best silicon detectors and make SiC detectors practically noiseless at room temperature. The detectors have been tested also at high temperatures: at T=+100°C the J= 1 nA/cm2, allowing excellent X-ray spectrometry even at such high temperatures, forbidden to conventional semiconductor detectors. In addition we will show that our SiC detectors can also operate while the temperature is freely changing of tens of °C, without affecting spectra quality.The possibility to make the detector operating without any cooling system even at high temperature with adequate energy resolution can open new perspectives in X‑ray spectrometry applications, even ever considered before.
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| 3. |
- Bertuccio, Giuseppe, et al.
(författare)
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Ultra Low Noise Epitaxial 4H-SiC X-Ray Detectors
- 2009
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Ingår i: Materials Science Forum. - : Trans Tech Publications Inc.. - 0255-5476 .- 1662-9752. ; 615-617, s. 845-848
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Tidskriftsartikel (refereegranskat)abstract
- The design and the experimental results of some prototypes of SiC X-ray detectors are presented. The devices have been manufactured on top of 2 inch 4H-SiC wafer with 115 μm thick undoped high purity epitaxial layer, which constitutes the detection’s active volume. Pad and pixel detectors based on Ni-Schottky junctions have been tested. The residual doping of the epi-layer was found tobe extremely low, 3.7 x 1013 cm-3, allowing to achieve the highest detection efficiency and the lower specific capacitance of the detectors. At 22 °C and in operating bias condition, the reverse current densities of the detector’s Schottky junctions have been measured to be between J = 0.3 pA/cm2 and J = 4 pA/cm2; these values are more than two orders of magnitude lower than those of state of the art silicon detectors. With such low leakage currents, the equivalent electronic noise of SiC pixel detectors is as low as 0.5 electrons r.m.s at room temperature, which represents a new state of the art in the scenario of semiconductor radiation detectors.
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| 4. |
- Bertuccio, Giuseppe, et al.
(författare)
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X-γ Ray Spectroscopy With Semi-Insulating 4H-Silicon Carbide
- 2013
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Ingår i: IEEE Transactions on Nuclear Science. - : IEEE. - 0018-9499 .- 1558-1578. ; 60:2, s. 1436-1441
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Tidskriftsartikel (refereegranskat)abstract
- Radiation detectors on a semi-insulating (SI) 4H siliconcarbide (SiC) wafer have been manufactured and characterizedwith X and photons in the range 8–59 keV. The detectors were 400 μm diameter circular Ni-SiC junctions on an SI 4H-SiC wafer thinned to 70 μm. Dark current densities of 3.5 nA/cm2 at 20 °C and 0.3 μA/cm2 at 104 °C with an internal electric field of 7 kV/cm have been measured. X-γ ray spectra from 241Am have been acquired at room temperature with pulser line width of 756 eV FWHM. The charge collection efficiency (CCE) has been measured under different experimental conditions with a maximum CCE = 75 % at room temperature. Polarization effects have been observed, and the dependence of CCE on time and temperature has been measured and analyzed. The charge trapping has been described by the Hecht model with a maximum totalmean drift length of 107 μm at room temperature.
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| 5. |
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Silicon Carbide Microstrip Detectors for High Resolution X-Ray Spectroscopy
- 2012
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Proceedings (redaktörskap) (refereegranskat)abstract
- Silicon Carbide (SiC) is a wide bandgap semiconductor with outstanding physical properties for realizing ionizing radiation detectors. We present the manufacturing, electrical and spectroscopic characterization of a prototype SiC microstrip detector constituted by 32 strips, 2 mm long, 25 μm wide with 55 μm pitch. The detectors have been fabricated on 115 μm thick undoped epitaxial 4H-SiC using Ni-SiC Schottky junctions. The measured leakage currents are below 5 fA at 25 °C and 0.6 pA at 107 °C with internal electric fields up to 30 kV/cm. X-ray spectra from 55Fe and 241Am with energy resolution of 224 eV FWHM and 249 eV FWHM (12-13.5 electrons r.m.s.) have been acquired at 20 °C and 80 °C, respectively.
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