| 1. |
- Acosta, Stefan, et al.
(författare)
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Fallbeskrivning. Endometrios orsakade kolonileus, uretärobstruktion och hypertoni
- 2001
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Ingår i: Läkartidningen. - 0023-7205. ; 98:18, s. 2208-2212
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Tidskriftsartikel (refereegranskat)abstract
- Laparoscopy and palpation offer only a rough estimate of the extent of endometriosis. Consequently, endometriosis involving the bowels and urinary tract is under-diagnosed. Bowel obstruction and retroperitoneal endometriosis with obstruction of the ureter are uncommon conditions, but awareness of them is important. Ureteric obstruction develops slowly from periureteral fibrosis and often results in an asymptomatic hydronephrosis, loss of renal function and hypertension. Although renography is the first line of choice in investigation of the upper urinary tract in cases of suspected ureteric obstruction, ultrasound of the kidneys may be useful in the hands of the experienced gynecologist as a screening tool at consultation. The rationale for this recommendation is that ureteric obstruction and hydronephrosis often occur simultaneously. We present a case with bowel obstruction mimicking sigmoid carcinoma, ureteric obstruction and hypertension, caused by endometriosis, where the diagnostic difficulties are illustrated. Collaboration between gynecologist and urologist is essential in selected cases of endometriosis.
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| 2. |
- Nicolaï, L., et al.
(författare)
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Bi ultra-thin crystalline films on InAs(1 1 1)A and B substrates : A combined core-level and valence-band angle-resolved and dichroic photoemission study
- 2019
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Ingår i: New Journal of Physics. - : IOP Publishing. - 1367-2630. ; 21:12
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Tidskriftsartikel (refereegranskat)abstract
- The growth of Bi on both the In-terminated (A) face and the As-terminated (B) face of InAs(1 1 1) has been investigated by low-energy electron diffraction, scanning tunnelling microscopy, and photoelectron spectroscopy using synchrotron radiation. The changes upon Bi deposition of the In 4d and Bi 5d5/2 photoelectron signals allow to get a comprehensive picture of the Bi/InAs(1 1 1) interface. From the early stage the Bi growth on the A face is epitaxial, contrary to that on the B face that proceeds via the formation of islands. Angle-resolved photoelectron spectra show that the electronic structure of a Bi deposit of ≈10 bi-layers on the A face is identical to that of bulk Bi, while more than ≈30 bi-layers are needed for the B face. Both bulk and surface electronic states observed are well accounted for by fully relativistic ab initio calculations performed using the one-step model of photoemission. These calculations are used to analyse the dichroic photoemission data recorded in the vicinity of the Fermi level around the Γ&bar; point of the Brillouin zone.
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| 3. |
- Nicolai, L., et al.
(författare)
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Bi ultra-thin crystalline films on InAs(111)A and B substrates: a combined core-level and valence-band angle-resolved and dichroic photoemission study
- 2019
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Ingår i: New Journal of Physics. - : IOP Publishing. - 1367-2630. ; 21:12
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Tidskriftsartikel (refereegranskat)abstract
- The growth of Bi on both the In-terminated (A) face and the As-terminated (B) face of InAs(111) has been investigated by low-energy electron diffraction, scanning tunnelling microscopy, and photoelectron spectroscopy using synchrotron radiation. The changes upon Bi deposition of the In 4d and Bi 5d(5/2) photoelectron signals allow to get a comprehensive picture of the Bi/InAs(111) interface. From the early stage the Bi growth on the A face is epitaxial, contrary to that on the B face that proceeds via the formation of islands. Angle-resolved photoelectron spectra show that the electronic structure of a Bi deposit of approximate to 10 bi-layers on the A face is identical to that of bulk Bi, while more than approximate to 30 bi-layers are needed for the B face. Both bulk and surface electronic states observed are well accounted for by fully relativistic ab initio calculations performed using the one-step model of photoemission. These calculations are used to analyse the dichroic photoemission data recorded in the vicinity of the Fermi level around the (Gamma) over bar point of the Brillouin zone.
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| 4. |
- Nylén, H., et al.
(författare)
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O KVV Auger emission versus resonant photoemission at the O K edge of high-Tc superconductors
- 1998
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Ingår i: Physica C: Superconductivity and its Applications. - 0921-4534. ; 300:3-4, s. 161-170
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Tidskriftsartikel (refereegranskat)abstract
- Photoelectron spectroscopy results on single crystals of the superconductors Bi2Sr2CaCu2O8,Bi2Sr 2CuO6, Ba0.6K0.4BiO3 and the semiconductor Ba0.9K0.1BiO3 are reported for the photon energy region around the O K absorption threshold. The development of the O-KVV Auger structure has been carefully monitored as a function of photon energy. A non-monotonic behavior displaying a feature at a constant binding energy of about 14 eV was found for Bi2Sr2CaCu2O8 and Bi2Sr2CuO6 in a narrow photon energy region of 1 eV at the main edge of the O K absorption spectrum around 530 eV. The corresponding enhancement, connected with the autoionization of O 2 p states, is absent in Ba1-xKxBiO3 in contrast to Bi2Sr2CaCu2O8 and Bi2Sr2CuO6. The resonant enhancement is more pronounced for Bi2Sr2CuO6 as compared to Bi2Sr2CaCu2O8, which can be explained by a lower charge carrier concentration in the former case, leading to a more localized nature of intermediate O 2 p states. The model parameters Cu d-d and O p-p Coulomb interactions and the charge transfer energy Δ are estimated from the experiments.
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| 5. |
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| 6. |
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| 7. |
- Zakharov, A. A., et al.
(författare)
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Metal-dielectric transition in Ba0.6K0.4BiO3-y single crystals studied by scanning photoelectron microscopy
- 1997
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Ingår i: Physical Review B (Condensed Matter). - 0163-1829. ; 56:10
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Tidskriftsartikel (refereegranskat)abstract
- The electronic structure of Ba0.6K0.4BiO3-y single crystals has been studied using a scanning photoelectron microscope with a lateral resolution in the one micrometer range. It is possible to change the oxygen content (y) and convert the surface from the metallic to the dielectric state presumably by breaking the Bi-O bonds by using the focused zero-order light to irradiate the sample surface. The electronic states close to the Fermi level after such a treatment show a different doping dependence as compared to the case of potassium doping. By imaging the surface on the micrometer scale we find significant variations in the valence band intensity over the surface and observe a rather large intensity of the density of states close to the Fermi level. This will have a large impact on the discussions of dynamical lattice distortion and pseudogap behavior in the metallic phase.
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