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| 2. |
- Gottlob, H. D. B., et al.
(author)
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Scaling potential and MOSFET integration of thermally stable Gd silicate dielectrics
- 2009
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In: Microelectronic Engineering. - : Elsevier BV. - 0167-9317 .- 1873-5568. ; 86:7-9, s. 1642-1645
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Journal article (peer-reviewed)abstract
- We investigate the potential of gadolinium silicate (GdSiO) as a thermally stable high-k gate dielectric in a gate first integration scheme. There silicon diffuses into gadolinium oxide (Gd2O3) from a silicon oxide (SiO2) interlayer specifically prepared for this purpose. We report on the scaling potential based on detailed material analysis. Gate leakage current densities and EOT values are compatible with an ITRS requirement for low stand by power (LSTP). The applicability of this GdSiO process is demonstrated by fully functional silicon on insulator (SOI) metal oxide semiconductor field effect transistors (MOSFETs). (C) 2009 Elsevier B.V. All rights reserved.
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| 3. |
- Fuchs, A., et al.
(author)
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Nanowire fin field effect transistors via UV-based nanoimprint lithography
- 2006
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In: Journal of Vacuum Science & Technology B. - : American Vacuum Society. - 1071-1023 .- 1520-8567. ; 24:6, s. 2964-2967
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Journal article (peer-reviewed)abstract
- A triple step alignment process for UV nanoimprint lithography (UV-NIL) for the fabrication of nanoscale fin field effect transistors (FinFETs) is presented. An alignment accuracy is demonstrated between two functional layers of less than 20 nm (3 sigma). The electrical characterization of the FinFETs fabricated by a full NIL process demonstrates the potential of UV-NIL for future nanoelectronic devices.
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| 4. |
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| 5. |
- Pecunia, Vincenzo, et al.
(author)
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Roadmap on energy harvesting materials
- 2023
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In: Journal of Physics. - : IOP Publishing. - 2515-7639. ; 6:4
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Journal article (peer-reviewed)abstract
- Ambient energy harvesting has great potential to contribute to sustainable development and address growing environmental challenges. Converting waste energy from energy-intensive processes and systems (e.g. combustion engines and furnaces) is crucial to reducing their environmental impact and achieving net-zero emissions. Compact energy harvesters will also be key to powering the exponentially growing smart devices ecosystem that is part of the Internet of Things, thus enabling futuristic applications that can improve our quality of life (e.g. smart homes, smart cities, smart manufacturing, and smart healthcare). To achieve these goals, innovative materials are needed to efficiently convert ambient energy into electricity through various physical mechanisms, such as the photovoltaic effect, thermoelectricity, piezoelectricity, triboelectricity, and radiofrequency wireless power transfer. By bringing together the perspectives of experts in various types of energy harvesting materials, this Roadmap provides extensive insights into recent advances and present challenges in the field. Additionally, the Roadmap analyses the key performance metrics of these technologies in relation to their ultimate energy conversion limits. Building on these insights, the Roadmap outlines promising directions for future research to fully harness the potential of energy harvesting materials for green energy anytime, anywhere.
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| 6. |
- Bell, D. C., et al.
(author)
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Precision cutting and patterning of graphene with helium ions
- 2009
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In: Nanotechnology. - : IOP Publishing. - 0957-4484 .- 1361-6528. ; 20:45, s. 455301-
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Journal article (peer-reviewed)abstract
- We report nanoscale patterning of graphene using a helium ion microscope configured for lithography. Helium ion lithography is a direct-write lithography process, comparable to conventional focused ion beam patterning, with no resist or other material contacting the sample surface. In the present application, graphene samples on Si/SiO(2) substrates are cut using helium ions, with computer controlled alignment, patterning, and exposure. Once suitable beam doses are determined, sharp edge profiles and clean etching are obtained, with little evident damage or doping to the sample. This technique provides fast lithography compatible with graphene, with similar to 15 nm feature sizes.
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| 7. |
- Driussi, F., et al.
(author)
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Fabrication, characterization and modeling of strained SOI MOSFETs with very large effective mobility
- 2007
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In: ESSDERC 2007. - 9781424411238 ; , s. 315-318
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Conference paper (peer-reviewed)abstract
- Strained Silicon on insulators (sSOI) wafers with a supercritical thickness of 58 nm were produced using thin strain relaxed SiGe buffer layers, wafer bonding, selective etch back and epitaxial overgrowth. Raman spectroscopy revealed an homogeneous strain of 0.63 +/- 0.03% in the strained Si layer. Long channel n-type SOI-MOSFETs showed very large electron mobilities up to 1200 cm(2)/Vs in the strained Si devices. These values are more than two times larger than those of reference SOI n-MOSFETs. Mobility simulations with state of the art scattering models are then used to interpret the experiments.
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| 8. |
- Geringer, V., et al.
(author)
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Intrinsic and extrinsic corrugation of monolayer graphene deposited on SiO(2)
- 2009
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In: Physical Review Letters. - 0031-9007 .- 1079-7114. ; 102:7, s. 076102-
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Journal article (peer-reviewed)abstract
- Using scanning tunneling microscopy in an ultrahigh vacuum and atomic force microscopy, we investigate the corrugation of graphene flakes deposited by exfoliation on a Si/SiO(2) (300 nm) surface. While the corrugation on SiO(2) is long range with a correlation length of about 25 nm, some of the graphene monolayers exhibit an additional corrugation with a preferential wavelength of about 15 nm. A detailed analysis shows that the long-range corrugation of the substrate is also visible on graphene, but with a reduced amplitude, leading to the conclusion that the graphene is partly freely suspended between hills of the substrate. Thus, the intrinsic rippling observed previously on artificially suspended graphene can exist as well, if graphene is deposited on SiO(2).
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| 9. |
- Gottlob, H. D. B., et al.
(author)
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Gd silicate : A high-k dielectric compatible with high temperature annealing
- 2009
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In: Journal of Vacuum Science & Technology B. - : American Vacuum Society. - 1071-1023 .- 1520-8567 .- 2166-2754 .- 2166-2746. ; 27:1, s. 249-252
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Journal article (peer-reviewed)abstract
- The authors report on the investigation of amorphous Gd-based silicates as high-k dielectrics. Two different stacks of amorphous gadolinium oxide (Gd(2)O(3)) and silicon oxide (SiO(2)) on silicon substrates are compared after annealing at temperatures up to 1000 degrees C. Subsequently formed metal oxide semiconductor capacitors show a significant reduction in the capacitance equivalent thicknesses after annealing. Transmission electron microscopy, medium energy ion scattering, and x-ray diffraction analysis reveal distinct structural changes such as consumption of the SiO(2) layer and formation of amorphous Gd silicate. The controlled formation of Gd silicates in this work indicates a route toward high-k dielectrics compatible with conventional, gate first complementary metal-oxide semiconductor integration schemes.
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| 10. |
- Mashoff, T., et al.
(author)
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Bistability and Oscillatory Motion of Natural Nanomembranes Appearing within Monolayer Graphene on Silicon Dioxide
- 2010
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In: Nano letters (Print). - : American Chemical Society (ACS). - 1530-6984 .- 1530-6992. ; 10:2, s. 461-465
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Journal article (peer-reviewed)abstract
- The truly two-dimensional material graphene is an ideal candidate for nanoelectromechanics due to its large strength and mobility. Here we show that graphene flakes provide natural nanomembranes of diameter down to 3 nm within its intrinsic rippling. The membranes can be lifted either reversibly or hysteretically by the tip of a scanning tunneling microscope. The clamped-membrane model including van-der-Waals and dielectric forces explains the results quantitatively. AC-fields oscillate the membranes, which might lead to a completely novel approach to controlled quantized oscillations or single atom mass detection.
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