| 1. |
- Bell, D. C., et al.
(författare)
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Precision cutting and patterning of graphene with helium ions
- 2009
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Ingår i: Nanotechnology. - : IOP Publishing. - 0957-4484 .- 1361-6528. ; 20:45, s. 455301-
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Tidskriftsartikel (refereegranskat)abstract
- We report nanoscale patterning of graphene using a helium ion microscope configured for lithography. Helium ion lithography is a direct-write lithography process, comparable to conventional focused ion beam patterning, with no resist or other material contacting the sample surface. In the present application, graphene samples on Si/SiO(2) substrates are cut using helium ions, with computer controlled alignment, patterning, and exposure. Once suitable beam doses are determined, sharp edge profiles and clean etching are obtained, with little evident damage or doping to the sample. This technique provides fast lithography compatible with graphene, with similar to 15 nm feature sizes.
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| 2. |
- Gottlob, H. D. B., et al.
(författare)
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Scaling potential and MOSFET integration of thermally stable Gd silicate dielectrics
- 2009
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Ingår i: Microelectronic Engineering. - : Elsevier BV. - 0167-9317 .- 1873-5568. ; 86:7-9, s. 1642-1645
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Tidskriftsartikel (refereegranskat)abstract
- We investigate the potential of gadolinium silicate (GdSiO) as a thermally stable high-k gate dielectric in a gate first integration scheme. There silicon diffuses into gadolinium oxide (Gd2O3) from a silicon oxide (SiO2) interlayer specifically prepared for this purpose. We report on the scaling potential based on detailed material analysis. Gate leakage current densities and EOT values are compatible with an ITRS requirement for low stand by power (LSTP). The applicability of this GdSiO process is demonstrated by fully functional silicon on insulator (SOI) metal oxide semiconductor field effect transistors (MOSFETs). (C) 2009 Elsevier B.V. All rights reserved.
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| 3. |
- Pecunia, Vincenzo, et al.
(författare)
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Roadmap on energy harvesting materials
- 2023
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Ingår i: Journal of Physics. - : IOP Publishing. - 2515-7639. ; 6:4
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Tidskriftsartikel (refereegranskat)abstract
- Ambient energy harvesting has great potential to contribute to sustainable development and address growing environmental challenges. Converting waste energy from energy-intensive processes and systems (e.g. combustion engines and furnaces) is crucial to reducing their environmental impact and achieving net-zero emissions. Compact energy harvesters will also be key to powering the exponentially growing smart devices ecosystem that is part of the Internet of Things, thus enabling futuristic applications that can improve our quality of life (e.g. smart homes, smart cities, smart manufacturing, and smart healthcare). To achieve these goals, innovative materials are needed to efficiently convert ambient energy into electricity through various physical mechanisms, such as the photovoltaic effect, thermoelectricity, piezoelectricity, triboelectricity, and radiofrequency wireless power transfer. By bringing together the perspectives of experts in various types of energy harvesting materials, this Roadmap provides extensive insights into recent advances and present challenges in the field. Additionally, the Roadmap analyses the key performance metrics of these technologies in relation to their ultimate energy conversion limits. Building on these insights, the Roadmap outlines promising directions for future research to fully harness the potential of energy harvesting materials for green energy anytime, anywhere.
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| 4. |
- Welch, C. C., et al.
(författare)
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Silicon etch process options for micro- and nanotechnology using inductively coupled plasmas
- 2006
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Ingår i: Microelectronic Engineering. - : Elsevier BV. - 0167-9317 .- 1873-5568. ; 83:4-9, s. 1170-1173
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Tidskriftsartikel (refereegranskat)abstract
- Silicon is an essential material in the fabrication of a continually expanding range of micro- and nano-scale opto-and microelectronic devices. The fabrication of many such devices requires patterning of the silicon but until recently exploitation of the technology has been restricted by the difficulty of forming the ever-smaller features and higher aspect ratios demanded. Plasma etching through a mask layer is a very useful means for fine-dimension patterning of silicon. In this work, several solutions are presented for the micro- and nano-scale etching of silicon using inductively coupled plasmas ICP.
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| 5. |
- Bell, David C., et al.
(författare)
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Precision material modification and patterning with He ions
- 2009
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Ingår i: Journal of Vacuum Science & Technology B. - : American Vacuum Society. - 1071-1023 .- 1520-8567. ; 27:6, s. 2755-2758
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Tidskriftsartikel (refereegranskat)abstract
- The authors report on the use of a helium ion microscope as a potential technique for precise nanopatterning. Combined with an automated pattern generation system, they demonstrate controlled etching and patterning of materials, giving precise command over the geometery of the modified nanostructure. After the determination of suitable doses, sharp edge profiles and clean etching of areas in materials were observed. In this article they present examples of patterning on SiO(2) and graphene, which is particularly relevant. This technique could be an avenue for precise material modification for future graphene based device fabrication. The technique has the potential to revolutionize the way that very thin, one-atomic layer materials are modified in a controlled and predictable way.
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| 6. |
- Benetti, M., et al.
(författare)
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POLYSILICON MESOSCOPIC WIRES COATED BY Pd AS H(2) SENSORS
- 2009
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Ingår i: PROCEEDINGS OF THE 13TH ITALIAN CONFERENCE ON SENSORS AND MICROSYSTEMS. - SINGAPORE : WORLD SCIENTIFIC PUBL CO PTE LTD. ; , s. 161-165
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Konferensbidrag (refereegranskat)abstract
- In this work a novel monocrystalline silicon nanowires array has been investigated and presented as hydrogen sensor, designed and fabricated by employing high resolution microfabrication techniques and featuring a high surface/volume ratio. The nanowires arrays makes up the channel of a MOS system, palladium-silicon dioxide-silicon. Several devices have been fabricated by using a SOI (Silicon On Insulator) substrate, Source and Drain have been geometrically patterned by optical lithography and Boron p-doped. Electron Beam Litography (EBL) defined the MOS channel made up of a nanowires array of different length and width in different transistors. The pads of Source and Drain have been manufactured with an aluminium film deposition. The Gate has been fabricated with a grown silicon oxide layer (17.4 nm) and Palladium has been used as gate contact. Polarizing and exposing the device to H(2)/N(2) cycles at different concentrations some preliminary measurements have been successfully conducted.
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| 7. |
- Fan, Xuge, et al.
(författare)
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Graphene ribbons with suspended masses as transducers in ultra-small nanoelectromechanical accelerometers
- 2019
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Ingår i: Nature Electronics. - : Nature Publishing Group. - 2520-1131. ; 2:9, s. 394-404
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Tidskriftsartikel (refereegranskat)abstract
- Nanoelectromechanical system (NEMS) sensors and actuators could be of use in the development of next-generation mobile, wearable and implantable devices. However, these NEMS devices require transducers that are ultra-small, sensitive and can be fabricated at low cost. Here, we show that suspended double-layer graphene ribbons with attached silicon proof masses can be used as combined spring–mass and piezoresistive transducers. The transducers, which are created using processes that are compatible with large-scale semiconductor manufacturing technologies, can yield NEMS accelerometers that occupy at least two orders of magnitude smaller die area than conventional state-of-the-art silicon accelerometers. With our devices, we also extract the Young’s modulus values of double-layer graphene and show that the graphene ribbons have significant built-in stresses.
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| 8. |
- Fan, Xuge, et al.
(författare)
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Manufacture and characterization of graphene membranes with suspended silicon proof masses for MEMS and NEMS applications
- 2020
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Ingår i: MICROSYSTEMS & NANOENGINEERING. - : NATURE PUBLISHING GROUP. - 2055-7434. ; 6:1
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Tidskriftsartikel (refereegranskat)abstract
- Graphene's unparalleled strength, chemical stability, ultimate surface-to-volume ratio and excellent electronic properties make it an ideal candidate as a material for membranes in micro- and nanoelectromechanical systems (MEMS and NEMS). However, the integration of graphene into MEMS or NEMS devices and suspended structures such as proof masses on graphene membranes raises several technological challenges, including collapse and rupture of the graphene. We have developed a robust route for realizing membranes made of double-layer CVD graphene and suspending large silicon proof masses on membranes with high yields. We have demonstrated the manufacture of square graphene membranes with side lengths from 7 mu m to 110 mu m, and suspended proof masses consisting of solid silicon cubes that are from 5 mu mx5 mu mx16.4 mu m to 100 mu mx100 mu mx16.4 mu m in size. Our approach is compatible with wafer-scale MEMS and semiconductor manufacturing technologies, and the manufacturing yields of the graphene membranes with suspended proof masses were >90%, with >70% of the graphene membranes having >90% graphene area without visible defects. The measured resonance frequencies of the realized structures ranged from tens to hundreds of kHz, with quality factors ranging from 63 to 148. The graphene membranes with suspended proof masses were extremely robust, and were able to withstand indentation forces from an atomic force microscope (AFM) tip of up to 7000nN. The proposed approach for the reliable and large-scale manufacture of graphene membranes with suspended proof masses will enable the development and study of innovative NEMS devices with new functionalities and improved performances.
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| 9. |
- Fuchs, A., et al.
(författare)
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Nanowire fin field effect transistors via UV-based nanoimprint lithography
- 2006
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Ingår i: Journal of Vacuum Science & Technology B. - : American Vacuum Society. - 1071-1023 .- 1520-8567. ; 24:6, s. 2964-2967
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Tidskriftsartikel (refereegranskat)abstract
- A triple step alignment process for UV nanoimprint lithography (UV-NIL) for the fabrication of nanoscale fin field effect transistors (FinFETs) is presented. An alignment accuracy is demonstrated between two functional layers of less than 20 nm (3 sigma). The electrical characterization of the FinFETs fabricated by a full NIL process demonstrates the potential of UV-NIL for future nanoelectronic devices.
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| 10. |
- Lemme, Max C., 1970-, et al.
(författare)
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Etching of Graphene Devices with a Helium Ion Beam
- 2009
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Ingår i: ACS Nano. - : American Chemical Society (ACS). - 1936-0851 .- 1936-086X. ; 3:9, s. 2674-2676
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Tidskriftsartikel (refereegranskat)abstract
- We report on the etching of graphene devices with a helium ion beam, including in situ electrical measurement during lithography. The etching process can be used to nanostructure and electrically isolate different regions In a graphene device, as demonstrated by etching a channel in a suspended graphene device with etched gaps down to about 10 nm. Graphene devices on silicon dioxide (02) substrates etch with lower He ion doses and are found to have a residual conductivity after etching, which we attribute to contamination by hydrocarbons.
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