| 1. |
- Leuther, A., et al.
(författare)
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Metamorphic HEMT technology for low-noise applications
- 2009
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Ingår i: Conference Proceedings - International Conference on Indium Phosphide and Related Materials. - 1092-8669. - 9781424434336 ; , s. 188-191
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Konferensbidrag (refereegranskat)abstract
- Different noise sources in HEMTs are discussed, and state-of-the-art low-noise amplifiers based on the Fraunhofer IAF 100 nm and 50 nm gate length metamorphic HEMT (mHEMT) process are presented. These mHEMT technology feature an extrinsic f T of 220 / 375 GHz and an extrinsic transconduction g m , max , of 1300 / 1800 mS/mm. By using the 50 nm technology several low-noise amplifier MMICs were realized. A small signal gain of 21 dB and a noise figure of 1.9 dB was measured in the frequency range between 80 and 100 GHz at ambient temperature. To investigate the low temperature behaviour of the 100 nm technology, single 4 * 40 μm mHEMTs were integrated in hybrid 4 - 8 GHz (Chalmers) and 16 - 26 GHz (Yebes) amplifiers. At cryogenic temperatures noise temperatures of 3 K at 5 GHz and 12 K at 22 GHz were achieved.
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| 2. |
- Vassilev, Vessen, 1969, et al.
(författare)
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MMIC-Based Components for MM-Wave Instrumentation
- 2010
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Ingår i: IEEE Microwave and Wireless Components Letters. - 1558-1764 .- 1531-1309. ; 20:10, s. 578-580
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Tidskriftsartikel (övrigt vetenskapligt/konstnärligt)abstract
- In this letter, we present results of fully integrated 90-130 GHz receiver based on 100 nm mHEMT technology. The receiver contains a low noise amplifier (LNA), mixer and LO multiplier chain integrated into a single monolithic microwave integrated circuit (MMIC). The circuit is packaged into a waveguide block, characterized and compared to on-wafer measurements. Waveguide to microstrip transitions are used to interface the MMIC to the waveguide. A breakout LNA circuit is also packaged, and its performance is compared to the receiver. The LNA noise was characterized on a wafer and after packaging. The packaged module is measured at both room and cryogenic temperatures, NF of 3.7 dB is measured at 300 K and 0.9 dB at 20 K.
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| 3. |
- Vassilev, Vessen, 1969, et al.
(författare)
-
MMIC-based receivers for mm-wave radiometry
- 2010
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Ingår i: IRMMW-THz 2010 - 35th International Conference on Infrared, Millimeter, and Terahertz Waves, Conference Guide. - 9781424466573
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Konferensbidrag (övrigt vetenskapligt/konstnärligt)abstract
- We present results of packaged mm-wave receiver components based on 100nm mHEMT technology. The components are to be used for observations of the atmospheric lines at 118 GHz and 183 GHz. A 90-130 GHz single-chip receiver MMIC, including LNA, mixer and LO multiplier chain, is packaged in to a waveguide block, characterized and compared to on-wafer measurements. A breakout LNA circuit is also packaged and its performance is compared to the receiver. A 183 GHz source is designed to be used as a LO source.
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| 4. |
- Abbasi, Morteza, 1982, et al.
(författare)
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Single-Chip 220-GHz Active Heterodyne Receiver and Transmitter MMICs With On-Chip Integrated Antenna
- 2011
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Ingår i: IEEE Transactions on Microwave Theory and Techniques. - 0018-9480 .- 1557-9670. ; 59:2, s. 466-478
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Tidskriftsartikel (refereegranskat)abstract
- This paper presents the design and characterization of single-chip 220-GHz heterodyne receiver (RX) and transmitter (TX) monolithic microwave integrated circuits (MMICs) with integrated antennas fabricated in 0.1-mu m GaAs metamorphic high electron-mobility transistor technology. The MMIC receiver consists of a modified square-slot antenna, a three-stage low-noise amplifier, and a sub-harmonically pumped resistive mixer with on-chip local oscillator frequency multiplication chain. The transmitter chip is the dual of the receiver chip by inverting the direction of the RF amplifier. The chips are mounted on 5-mm silicon lenses in order to interface the antenna to the free space and are packaged into two separate modules. The double-sideband noise figure (NF) and conversion gain of the receiver module are measured with the Y-factor method. The total noise temperature of 1310 +/- 100K(corresponding to an NF of 7.4 dB), including the losses in the lens and antenna, is measured at 220 GHz with a respective conversion gain of 3.5 dB. The radiated continuous-wave power from the transmitter module is measured to be up to -6 dBm from 212 to 226 GHz. The transmitter and receiver are linked in a quasi-optical setup and the IF to IF response is measured to be flat up to 10 GHz. This is verified to be usable for transmission of a 12.5-Gb/s data stream between the transmit and receive modules over a 0.5-m wireless link. The modules operate with a 1.3-V supply and each consume 110-mW dc power. The presented 220-GHz integrated circuits and modules can be used in a variety of applications, including passive and active imaging, as well as high-speed data communications. To the best of our knowledge, these MMICs are the highest frequency single-chip low-noise heterodyne receiver and transmitter pair reported to date.
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| 5. |
- Abbasi, Morteza, 1982, et al.
(författare)
-
Single-Chip Frequency Multiplier Chains for Millimeter-Wave Signal Generation
- 2009
-
Ingår i: IEEE Transactions on Microwave Theory and Techniques. - 0018-9480 .- 1557-9670. ; 57:12, s. 3134-3142
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Tidskriftsartikel (refereegranskat)abstract
- Two single-chip frequency multiplier chains targeting 118 and 183 GHz output frequencies are presented. The chips are fabricated in a 0.1 mu m GaAs metamorphic high electron-mobility transistor process. The D-band frequency doubler chain covers 110 to 130 GHz with peak output power of 5 dBm. The chip requires 2 dBm input power and consumes only 65 mW of dc power. The signal at the fundamental frequency is suppressed more than 25 dB compared to the desired output signal over the band of interest. The G-band frequency sextupler (x6) chain covers 155 to 195 GHz with 0 dBm peak output power and requires 6.5 dBm input power and 92.5 mW dc power. The input signal to the multiplier chain can be reduced to 4 dBm while the output power drops only by 0.5 dB. The unwanted harmonics are suppressed more than 30 dB compared to the desired signal. An additional 183 GHz power amplifier is presented to be used after the x6 frequency multiplier chain if higher output power is required. The amplifier delivers 5 dBm output power with a small-signal gain of 9 dB from 155 to 195 GHz. The impedance matching networks are realized using coupled transmission lines which is shown to be a scalable and straightforward structure to use in amplifier design. Microstrip transmission lines are used in all the designs.
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| 6. |
- Zirath, Herbert, 1955, et al.
(författare)
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Integrated receivers up to 220 GHz utilizing GaAs-mHEMT technology
- 2009
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Ingår i: 2009 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2009; Singapore; Singapore; 9 January 2009 through 11 January 2009. - 9781424450305 ; , s. 225-228
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Konferensbidrag (refereegranskat)abstract
- The status of integrated receivers for remote sensing and communication applications from 60 GHz to higher frequencies is reviewed. Recent receiver results for silicon and III-V technologies are compared with Schottky diode receivers.
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| 7. |
- Zirath, Herbert, 1955, et al.
(författare)
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On the status of Low Noise Millimeterwave MMIC Receivers
- 2009
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Ingår i: APMC: 2009 ASIA PACIFIC MICROWAVE CONFERENCE. - 9781424428014 ; 1-5, s. 1303-1306
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Konferensbidrag (övrigt vetenskapligt/konstnärligt)abstract
- The status of integrated receivers for remote sensing and communication applications from 60 GHz to higher frequencies is reviewed. Recent receiver results for silicon and technologies are compared with Schottky diode receivers.
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