| 1. |
- Dong, Yu, et al.
(författare)
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Observation of a Ubiquitous (π, π)-Type Nematic Superconducting Order in the Whole Superconducting Dome of Ultra-Thin BaFe2–xNixAs2 Single Crystals
- 2021
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Ingår i: Chinese Physics Letters. - : Institute of Physics Publishing (IOPP). - 0256-307X .- 1741-3540. ; 38:9
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Tidskriftsartikel (refereegranskat)abstract
- In iron-based superconductors, the (0, pi) or (pi, 0) nematicity, which describes an electronic anisotropy with a four-fold symmetry breaking, is well established and believed to be important for understanding the superconducting mechanism. However, how exactly such a nematic order observed in the normal state can be related to the superconducting pairing is still elusive. Here, by performing angular-dependent in-plane magnetoresistivity using ultra-thin flakes in the steep superconducting transition region, we unveil a nematic superconducting order along the (pi, pi) direction in electron-doped BaFe2 - x Ni x As2 from under-doped to heavily overdoped regimes with x = 0.065-0.18. It shows superconducting gap maxima along the (pi, pi) direction rotated by 45 degrees from the nematicity along (0, pi) or (pi, 0) direction observed in the normal state. A similar (pi, pi)-type nematicity is also observed in the under-doped and optimally doped hole-type Ba1 - y K y Fe2As2, with y = 0.2-0.5. These results suggest that the (pi, pi) nematic superconducting order is a universal feature that needs to be taken into account in the superconducting pairing mechanism in iron-based superconductors.
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| 2. |
- Li, Junjie, et al.
(författare)
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A Novel Dry Selective Isotropic Atomic Layer Etching of SiGe for Manufacturing Vertical Nanowire Array with Diameter Less than 20 nm
- 2020
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Ingår i: Materials. - : MDPI AG. - 1996-1944. ; 13:3
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Tidskriftsartikel (refereegranskat)abstract
- Semiconductor nanowires have great application prospects in field effect transistors and sensors. In this study, the process and challenges of manufacturing vertical SiGe/Si nanowire array by using the conventional lithography and novel dry atomic layer etching technology. The final results demonstrate that vertical nanowires with a diameter less than 20 nm can be obtained. The diameter of nanowires is adjustable with an accuracy error less than 0.3 nm. This technology provides a new way for advanced 3D transistors and sensors.
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| 3. |
- Chen, Anqi, et al.
(författare)
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Highly Sensitive Graphene Oxide-based Fabry-Perot Low-frequency Acoustic Sensor With Low-coherence Polarized Demodulation Using Three-step Phase-Shifting Arctan Algorithms
- 2024
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Ingår i: Journal of Lightwave Technology. - 0733-8724 .- 1558-2213. ; 42:17, s. 6115-6123
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Tidskriftsartikel (refereegranskat)abstract
- Developing low-frequency acoustic senor with high sensitivity is crucial for diverse applications, ranging from seismic monitoring, military operations, to pipeline surveillance. Here, we have proposed a high-sensitivity graphene oxide (GO)-based Fabry-Perot low-frequency sensor, in which a 170 nm thick, large-area and uniformly GO film was prepared by a vacuum filtration method. To enhance the accuracy and stability of the sensor, a low-coherence interference system based on birefringent crystal blocks was designed utilizing a three-step phase-shifting arctangent algorithm. Our sensor exhibited a sensitivity of -93.48 dB re 1 rad/μPa at 6-60 Hz with a fluctuation of 0.6 dB. The minimum detectable pressure of the sensor was measured at 0.37 μPa/Hz1/2 @20 Hz with a signal to noise ratio of 135.41 dB. Overall, this sensor offers simplicity in preparation, high sensitivity, low detectable sound pressure, making it a significant asset for low-frequency acoustic applications.
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| 4. |
- Xiong, Wenjuan, et al.
(författare)
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SiNx films and membranes for photonic and MEMS applications
- 2020
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Ingår i: Journal of materials science. Materials in electronics. - : Springer Science and Business Media LLC. - 0957-4522 .- 1573-482X. ; 31, s. 90-97
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Tidskriftsartikel (refereegranskat)abstract
- This work presents a novel process to form SiN x films and process for membranes with excellent mechanical properties for micro-electro-mechanical systems application as well as integration as IR waveguide for photonic application. The SiN x films were fabricated in SiNgen apparatus which is a single wafer chamber equipment compared to conventional low pressure chemical vapor deposition furnace process. The films showed low stress, good mechanical properties, but the synthesis also eradicates the issues of particle contamination. Through optimizing of the growth parameters and post annealing profile, low stress (40 Mpa) SiN x film could be finally deposited when annealing temperature rose up to 1150 °C. The stress relaxation is a result of more Si nano-crystalline which was formed during annealing, according to the FTIR results. The mechanical properties, Young’s modulus and hardness, were 210 Gpa and 20 Gpa respectively. For the waveguide application, a stack of three layers, SiO 2 /SiN x /SiO 2 was formed where the optimized layer thicknesses were used for minimum optical loss according to simulation feedback. After deposition of the first two layers in the stack, the samples were annealed in range of 900–1150 °C in order to release the stress. Chemical mechanical polish technique was applied to planarize the nitride layer prior to the oxide cladding layer. Such wafers can be used to bond to Si or Ge to manufacture advanced substrates.
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| 5. |
- Guo, Pengzhi, et al.
(författare)
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Twisted Alkylthiothien-2-yl Flanks and Extended Conjugation Length Synergistically Enhanced Photovoltaic Performance by Boosting Dielectric Constant and Carriers Kinetic Characteristics
- 2021
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Ingår i: Macromolecular Chemistry and Physics. - : Wiley. - 1022-1352 .- 1521-3935. ; 222:12
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Tidskriftsartikel (refereegranskat)abstract
- Alternating conjugated polymers (CPs), derived from 2-ethylhexylthiothiophen-2-yl (TS) or 2-ethylhexylthiophen-2-yl (T) flanked dithieno[3,2-d:3,2-d ']benzo[1,2-b:4,5-b ']dithiophene (DTBDT) and diketopyrrolo-pyrrole (DPP) termed as PDTBDT-TS-DPP and PDTBDT-T-DPP, are prepared and characterized. It is found that the PDTBDT-TS-DPP not only exhibits slightly deepening the highest occupied molecular orbital energy levels, and similar absorption, etc., but also presents higher dielectric constant (epsilon(r)) of 6.7 at 1 kHz in contrast to 3.2 for PDTBDT-T-DPP, which are even higher than those of 4.3 and 3.0 for PBDT-TS-DPP/PBDT-T-DPP generated from TS and T flanked benzo[1,2-b:4,5-bMODIFIER LETTER PRIME]dithiophene and DPP. Beyond that, the power conversion efficiency of 8.17% for the inverted photovoltaic devices from DPP-based CPs, is achieved from PDTBDT-TS-DPP. The alkylthio side chains are used in the DTBDT of the larger twisting angles of TS flanks and longer conjugation length, synergistically contribute to the highest dipole moments, and then lead to the enhancement of epsilon(r), thus devoted the modification exciton dissociation and charge carriers kinetic characteristics. To the authors' knowledge, it is the first time to report that epsilon(r) of the CPs is connected with the twisting angle of flanks and conjugation length of the building blocks, besides the use of functional side chains and atoms.
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| 6. |
- Guo, Xuewen, et al.
(författare)
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Novel small-molecule zwitterionic electrolyte with ultralow work function as cathode modifier for inverted polymer solar cells
- 2018
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Ingår i: Organic electronics. - : ELSEVIER SCIENCE BV. - 1566-1199 .- 1878-5530. ; 59, s. 15-20
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Tidskriftsartikel (refereegranskat)abstract
- Interfacial compatibility between the electrode and organic semiconductor plays a critical role in controlling the charge transport and hence efficiency of organic solar cell. Here, we introduce a novel small-molecule zwitterionic electrolyte (S1) combined with ZnO as electron transporting interlayer employed for the inverted PTB7:PC71BM bulk heterojunction solar cell. The resulting device with the S1/ZnO stacked interlayer achieves a high PCE of 8.59%, obtaining a 16.2% improvement over the control device performance of 7.4% without the S1 attributed to the significant increased short-circuit current density and fill factor. The interfacial properties are investigated. It is found that the S1/ZnO interlayer possess an ultralow work function of 3.6 eV, which originates from the interfacial double dipole step induced by the zwitterionic side chain electrostatic realignment at interface. The S1/ZnO interlayer exhibits the excellent charge extraction ability, suppresses the charge recombination loss and decreases the series resistance at the active layer/electrode contact.
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| 7. |
- Li, Zhuwei, et al.
(författare)
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Atomically dispersed Ni active sites on covalent organic frameworks for heterogeneous metallaphotocatalytic C–N cross-coupling
- 2024
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Ingår i: Applied Catalysis B. - : Elsevier BV. - 0926-3373 .- 1873-3883. ; 345
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Tidskriftsartikel (refereegranskat)abstract
- Covalent organic frameworks (COFs) have been acknowledged as a potential platform for heterogeneous photoredox cross-coupling due to their excellent chemical stability, admirable controllability, and extremely prominent surface area. However, synthesizing COFs with bidentate ligand units and utilizing active sites remain a grand challenge. Herein, we report a promising new family of 2,6-pyridinedicarboxaldehyde-bis-(p-aminophenylimine)-based two-dimensional (2D) COFs (PP-COF) using an amine monomer and classic tri-aldehydes. On this basis, dispersed Ni single-atom sites were immobilized on three-types imine-based bi-coordinated 2D COFs (Ni SAS-PP-COF) as heterogeneous dual photoredox catalysts for photo/Ni dual-catalyzed C–N cross-coupling between aryl bromides and alkyl/sulfo amines. Under solar energy irradiation, PP-COF could absorb light to generate electrons and holes, then the photogenerated electrons are transferred to Ni sites to reduce divalent nickel to monovalent nickel. Monovalent nickel is necessary to drive the nickel catalytic cycle. Due to the increased charge separation and abundant active sites, the state-of-the-art Ni SAS-PP-COFs catalyst achieves excellent catalytic performance in comparison of pristine PP-COF. The heterogeneous Ni SAS-PP-COF catalytic system not only confirms the prospect of COFs as potential photoredox/transition-metal dual catalysts, but also provides in-depth insights into the synthesis of functional COFs toward practical metallaphotocatalytic application.
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| 8. |
- Lin, Qing-Fang, et al.
(författare)
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A stable aluminosilicate zeolite with intersecting three-dimensional extra-large pores
- 2021
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Ingår i: Science. - : American Association for the Advancement of Science (AAAS). - 0036-8075 .- 1095-9203. ; 374:6575, s. 1605-1608
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Tidskriftsartikel (refereegranskat)abstract
- Zeolites are crystalline porous materials with important industrial applications, including uses in catalytic and adsorption-separation processes. Access into and out of their inner confined space, where adsorption and reactions occur, is limited by their pore apertures. Stable multidimensional zeolites with larger pores able to process larger molecules are in demand in the fine chemical industry and for the oil processing on which the world still relies for fuels. Currently known extra-large-pore zeolites display poor stability and/or lack pore multidimensionality, limiting their usefulness. We report ZEO-1, a robust, fully connected aluminosilicate zeolite with mutually intersecting three-dimensional extra-large plus three-dimensional large pores. ZEO-1 is stable up to 1000 degrees C, has an extraordinary specific surface area (1000 square meters per gram), and shows potential as a catalytic cracking catalyst.
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| 9. |
- Luo, Jun, et al.
(författare)
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Effects of carbon pre-silicidation implant into Si substrate on NiSi
- 2014
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Ingår i: Microelectronic Engineering. - : Elsevier BV. - 0167-9317 .- 1873-5568. ; 120, s. 178-181
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Tidskriftsartikel (refereegranskat)abstract
- In this work, the effects of carbon pre-silicidation implant into Si(1 0 0) substrate on NiSi were investigated. NiSi films with carbon pre-silicidation implant to different doses were characterized by means of sheet resistance measurements, X-ray diffraction, scanning electron microscopy (SEM), planar view transmission electron microscopy (TEM) and second ion mass spectroscopy (SIMS). The presence of C is found to indeed significantly improve the thermal stability of NiSi as well as tends to change the preferred orientations of polycrystalline NiSi. The homogeneously distributed C at NiSi grain boundaries and C peak at NiSi/Si interface is ascribed to the improved thermal stability of NiSi. More importantly, the dose of carbon pre-silicidation implant also plays a key role in the formation of NiSi, which is suggested not to exceed a critical value about 5 x 10(15) cm(-2) in practical application in accordance with the results achieved in this work. (C) 2013 Elsevier B.V. All rights reserved.
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| 10. |
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