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Sökning: WFRF:(Li Linyang)

  • Resultat 1-10 av 12
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1.
  • Li, Linyang, et al. (författare)
  • Monolayer 1T-LaN2 : Dirac spin-gapless semiconductor of p-state and Chern insulator with a high Chern number
  • 2020
  • Ingår i: Applied Physics Letters. - : AMER INST PHYSICS. - 0003-6951 .- 1077-3118. ; 117:14
  • Tidskriftsartikel (refereegranskat)abstract
    • Two-dimensional transition-metal dinitrides have attracted considerable attention in recent years due to their rich magnetic properties. Here, we focus on rare-earth-metal elements and propose a monolayer of lanthanum dinitride with a 1T structural phase, 1T-LaN2. Using first-principles calculations, we systematically investigated the structure, stability, magnetism, and band structure of this material. It is a flexible and stable monolayer exhibiting a low lattice thermal conductivity, which is promising for future thermoelectric devices. The monolayer shows the ferromagnetic ground state with a spin-polarized band structure. Two linear spin-polarized bands cross at the Fermi level forming a Dirac point, which is formed by the p atomic orbitals of the N atoms, indicating that monolayer 1T-LaN2 is a Dirac spin-gapless semiconductor of p-state. When the spin-orbit coupling is taken into account, a large nontrivial indirect bandgap (86/354meV) can be opened at the Dirac point, and three chiral edge states are obtained, corresponding to a high Chern number of C=3, implying that monolayer 1T-LaN2 is a Chern insulator. Importantly, this kind of band structure is expected to occur in more monolayers of rare-earth-metal dinitride with a 1T structural phase.
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2.
  • Yu, Yawei, et al. (författare)
  • Ferromagnetism with in-plane magnetization, Dirac spin-gapless semiconducting properties, and tunable topological states in two-dimensional rare-earth metal dinitrides
  • 2022
  • Ingår i: Physical Review B. - : American Physical Society. - 2469-9950 .- 2469-9969. ; 105:2
  • Tidskriftsartikel (refereegranskat)abstract
    • Since the successful synthesis of bulk single crystals MoN2 and ReN2, which have a layered structure, transition-metal dinitrides have attracted considerable attention in recent years. Here, we focus on rare-earth metal (Rem) elements, and propose seven stable Rem dinitride monolayers with a 1T structure, namely, 1T-RemN2. We use first-principles calculations, and find that these monolayers have a ferromagnetic ground state with in-plane magnetization. Without spin-orbit coupling (SOC), the band structures are spin-polarized with Dirac points at the Fermi level. Remarkably, the 1T-LuN2 monolayer exhibits an isotropic magnetocrystalline anisotropy energy in the xy plane with in-plane magnetization, indicating easy tunability of the magnetization direction. When rotating the magnetization vector in the xy plane, we propose a model that accurately describes the variation of the SOC band gap and the two possible topological states (Weyl-like semimetal and Chern insulator states) whose properties are tunable. The Weyl-like semimetal state is a critical point between the two Chern insulator states with opposite sign of the Chern numbers (+/- 1). The nontrivial band gap (up to 60.3 meV) and the Weyl-like semimetal state are promising for applications in spintronic devices.
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4.
  • Chen, Xin, et al. (författare)
  • Giant spin-splitting and tunable spin-momentum locked transport in room temperature collinear antiferromagnetic semimetallic CrO monolayer
  • 2023
  • Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 123:2
  • Tidskriftsartikel (refereegranskat)abstract
    • In this work, we present theoretical predictions of a two-dimensional collinear antiferromagnetic semimetal, CrO, which exhibits a giant spin-split band structure, spin-momentum locked transport properties, and a high Neel temperature. Specifically, CrO features two pairs of spin-polarized anisotropic Weyl points at the Fermi level. By manipulating the position of these Weyl points with strain, we demonstrate that four different antiferromagnetic spintronic states with zero net magnetic moments can be achieved, including semimetals with two spin-polarized transport channels, half-semimetals, semiconductors with two spin-polarized transport channels, and half-semiconductors. The strain-induced semiconducting state also preserves the ultra-high carrier mobility of Weyl points, and the bandgap can be easily tuned. These findings offer a good avenue in spintronics without net magnetic moment or strong spin-orbit coupling and could lead to the development of antiferromagnetic materials for spintronic applications.
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5.
  • Chen, Xin, et al. (författare)
  • PAI-graphene : A new topological semimetallic two-dimensional carbon allotrope with highly tunable anisotropic Dirac cones
  • 2020
  • Ingår i: Carbon. - : Elsevier BV. - 0008-6223 .- 1873-3891. ; 170, s. 477-486
  • Tidskriftsartikel (refereegranskat)abstract
    • Using evolutionary algorithm for crystal structure prediction, we present a new stable two-dimensional (2D) carbon allotrope composed of polymerized as-indacenes (PAI) in a zigzag pattern, namely PAI-graphene whose energy is lower than most of the reported 2D allotropes of graphene. Crucially, the crystal structure realizes a nonsymmorphic layer group that enforces a nontrivial global topology of the band structure with two Dirac cones lying perfectly at the Fermi level. The absence of electron/hole pockets makes PAI-graphene a pristine crystalline topological semimetal having anisotropic Fermi velocities with a high value of 7.0×105" role="presentation"> m/s. We show that while the semimetallic property of the allotrope is robust against the application of strain, the positions of the Dirac cone and the Fermi velocities can be modified significantly with strain. Moreover, by combining strain along both the x- and y-directions, two band inversions take place at Γ" role="presentation"> leading to the annihilation of the Dirac nodes demonstrating the possibility of strain-controlled conversion of a topological semimetal into a semiconductor. Finally we formulate the bulk-boundary correspondence of the topological nodal phase in the form of a generalized Zak-phase argument finding a perfect agreement with the topological edge states computed for different edge-terminations.
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6.
  • Chen, Xin, 1992-, et al. (författare)
  • Room temperature two-dimensional antiferromagnetic Weyl semimetal CrO with giant spin-splitting and spin-momentum locked transport
  • Tidskriftsartikel (refereegranskat)abstract
    • Giant spin-splitting was recently predicted in collinear antiferromagnetic materials with a specific class of magnetic space group. In this work, we have predicted a two-dimensional (2D) antiferromagnetic Weyl semimetal (WS), CrO with large spin-split band structure, spin-momentum locked transport properties and high Néel temperature. It has two pairs of spin-polarized Weyl points at the Fermi level. By manipulating the position of the Weyl points with strain, four different antiferromagnetic spintronic states can be achieved: WSs with two spin-polarized transport channels (STCs), WSs with single STC, semiconductors with two STCs, and semiconductors with single STC. Based on these properties, a new avenue in spintronics with 2D collinear antiferromagnets is proposed.
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7.
  • Chen, Xingqi, et al. (författare)
  • Structural phase transition in monolayer gold(I) telluride : From a room-temperature topological insulator to an auxetic semiconductor
  • 2021
  • Ingår i: Physical Review B. - : American Physical Society. - 2469-9950 .- 2469-9969. ; 103:7
  • Tidskriftsartikel (refereegranskat)abstract
    • Structural phase transitions between semiconductors and topological insulators have rich applications in nanoelectronics but are rarely found in two-dimensional (2D) materials. In this work, by combining ab initio computations and evolutionary structure search, we investigate two stable 2D forms of gold(I) telluride (Au2Te) with square symmetry, noted as s(I)- and s(II)-Au2Te. s(II)-Au2Te is the global minimum structure and is a room-temperature topological insulator. s(I)-Au2Te is a direct-gap semiconductor with high carrier mobilities and unusual in-plane negative Poisson's ratio. Both s(I) and s(II) phases have ultralow Young's modulus, implying high flexibility. By applying a small tensile strain, s(II)-Au2Te can be transformed into s(I)-Au2Te. Hence, a structural phase transition from a room-temperature topological insulator to an auxetic semiconductor is found in the 2D forms of Au2Te, which enables potential applications in phase-change electronic devices. Moreover, we elucidate the mechanism of the phase transition with the help of phonon spectra and group theory analysis.
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10.
  • Chen, Xin, 1992-, et al. (författare)
  • Two-dimensional oxygen functionalized honeycomb and zigzag dumbbell silicene with robust Dirac cones
  • 2021
  • Ingår i: New Journal of Physics. - : Institute of Physics Publishing (IOPP). - 1367-2630. ; 23:2
  • Tidskriftsartikel (refereegranskat)abstract
    • Dumbbell-like structures are recently found to be energetically favored in group IV two-dimensional (2D) materials, exhibiting rich physics and many interesting properties. In this paper, using first-principles calculations, we have investigated the oxidized form of the hexagonal honeycomb (ODB-h) and zigzag dumbbell silicene (ODB-z). We confirm that both oxidization processes are energetically favorable, and their phonon spectra further demonstrate the dynamic stability. Contrary to the pristine dumbbell silicene structures (PDB-h and PDB-z silicene), these oxidized products ODB-h and ODB-z silicene are both semimetals with Dirac cones at the Fermi level. The Dirac cones of ODB-h and ODB-z silicene are at the K point and between Y and Gamma points respectively, possessing high Fermi velocities of 3.1 x 10(5) m s(-1) (ODB-h) and 2.9-3.4 x 10(5) m s(-1) (ODB-z). The origin of the Dirac cones is further explained by tight-binding models. The semimetallic properties of ODB-h and ODB-z are sensitive to compression due to the self-absorption effect, but quite robust against the tensile strain. These outstanding properties make oxidized dumbbell silicene a promising material for quantum computing and high-speed electronic devices.
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