| 1. |
- An, Sining, 1991, et al.
(författare)
-
An 8 Gbps E-band QAM Transmitter Using Symbol-based Outphasing Power Combining Technique
- 2017
-
Ingår i: Radio-Frequency Integration Technology (RFIT2017). - 9781509040360 ; , s. 150-152
-
Konferensbidrag (refereegranskat)abstract
- In millimeter-wave communication systems, generating high output power with high efficiency on the transmitter side is one major challenge. In this paper, a symbol-based outphasing power combining solution has been demonstrated with data rate up to 8 Gbps at an RF frequency of 83.5 GHz. This solution provides 2 dB higher output power compared to the power of two QAM signals at 12% EVM.
|
|
| 2. |
- Campion, James, 1989-, et al.
(författare)
-
An Ultra Low-Loss Silicon-Micromachined Waveguide Filter for D-Band Telecommunication Applications
- 2018
-
Ingår i: 2018 IEEE/MTT-S International Microwave Symposium. - : IEEE. - 9781538650677 ; , s. 583-586
-
Konferensbidrag (refereegranskat)abstract
- A very low-loss micromachined waveguide bandpassfilter for use in D-band (110–170GHz) telecommunication applicationsis presented. The 134–146GHz filter is implemented in a silicon micromachined technology which utilises a double H-plane split, resulting in significantly lower insertion loss than conventional micromachined waveguide devices. Custom split-blocks are designed and implemented to interface with the micromachined component. Compact micromachined E-plane bends connect the split-blocks and DUT. The measured insertion loss per unit length of the waveguide technology (0.008–0.016 dB/mm) is the lowest reported to date for any micromachined waveguide at D-band. The fabricated 6-pole filter, with a bandwidth of 11.8 GHz (8.4%), has a minimum insertion loss of 0.41 dB, averaging 0.5 dB across its 1 dB bandwidth, making it the lowest-loss D-band filter reported to date in any technology. Its return loss is better than 20 dB across 85% of the same bandwidth. The unloaded quality factor of a single cavity resonator implemented in this technology is estimated to be 1600.
|
|
| 3. |
- Campion, James, 1989-, et al.
(författare)
-
Toward Industrial Exploitation of THz Frequencies : Integration of SiGe MMICs in Silicon-Micromachined Waveguide Systems
- 2019
-
Ingår i: IEEE Transactions on Terahertz Science and Technology. - : Institute of Electrical and Electronics Engineers (IEEE). - 2156-342X .- 2156-3446. ; 9:6, s. 624-636
-
Tidskriftsartikel (refereegranskat)abstract
- A new integration concept for terahertz (THz) systems is presented in this article, wherein patterned silicon-on-insulator wafers form all DC, IF, and RF networks in a homogeneous medium, in contrast to existing solutions. Using this concept, silicon-micromachined waveguides are combined with silicon germanium (SiGe) monolithic microwave integrated circuits (MMICs) for the first time. All features of the integration platform lie in the waveguide’s H-plane. Heterogeneous integration of SiGe chips is achieved using a novel in-line H-plane transition. As an initial step toward complete systems, we outline the design, fabrication, and assembly of back-to-back transition structures, for use at D-band frequencies (110ï¿œ170 GHz). Special focus is given to the industrial compatibility of all components, fabrication, and assembly processes, with an eye on the future commercialization of THz systems. Prototype devices are assembled via two distinct processes, one of which utilizes semiautomated die-bonding tools. Positional and orientation tolerances for each process are quantified. An accuracy of $\pm \text3.5\; μ \textm$, $\pm \text1.5 °$ is achieved. Measured $S$-parameters for each device are presented. The insertion loss of a single-ended transition, largely due to MMIC substrate losses, is 4.2ï¿œ5.5 dB, with a bandwidth of 25 GHz (135ï¿œ160 GHz). Return loss is in excess of 5 dB. Measurements confirm the excellent repeatability of the fabrication and assembly processes and, thus, their suitability for use in high-volume applications. The proposed integration concept is highly scalable, permitting its usage far into the THz frequency spectrum. This article represents the first stage in the shift to highly compact, low-cost, volume-manufacturable THz waveguide systems.
|
|
| 4. |
- Chen, Jingjing, 1982, et al.
(författare)
-
10 Gbps 16QAM transmission over a 70/80 GHz (E-band) radio test-bed
- 2012
-
Ingår i: European Microwave Week 2012: "Space for Microwaves", EuMW 2012, Conference Proceedings - 7th European Microwave Integrated Circuits Conference, EuMIC 2012. - : IEEE. - 9782874870286 - 9781467323024 - 9782874870262 ; , s. 556-559
-
Konferensbidrag (refereegranskat)abstract
- A millimeter-wave radio test-bed is implemented which demonstrates 16QAM transmission over 70/80 GHz band for data rate up to 10 Gbps. Performance of the 16QAM transmitter and receiver is evaluated in a loop-back lab set-up. With the proposed 10 Gbps on single carrier system architecture, it is possible to achieve 40 Gbps over a 5 GHz bandwidth when combined with polarization and spatial multiplexing.
|
|
| 5. |
- Chen, Jingjing, 1982, et al.
(författare)
-
A data-rate adaptable modem solution for millimeter-wave wireless fronthaul networks
- 2015
-
Ingår i: 2015 IEEE International Conference on Communication Workshop, ICCW 2015. - 2164-7038. - 9781467363051 ; , s. 1-6
-
Konferensbidrag (refereegranskat)abstract
- For dense small cell deployment in centralized baseband architecture, wireless fronthaul is a cost efficient and flexible alternative to fiber-based fronthaul links. Due to the available wide bandwidth, millimeter-wave technology is the most promising choice to realize multi-gigabit wireless transmission of the common public radio interface (CPRI). In this paper, we present a novel differential encoding scheme for differential quadrature phase-shift keying (D-QPSK) modulation, which enables data-rate adaptable CPRI transmission without modification of a standard receiver. A multi-rate D-QPSK modulator/demodulator (modem) is implemented and tested for data rates up to 10 Gbps, limited by the bandwidth of the microwave components in use. This modem is verified to fulfill the CPRI specifications with respect to multi-rate, low latency and high system performance. Therefore, it is proposed for the implementation of wireless CPRI links at millimeter-wave bands.
|
|
| 6. |
- Edstam, Jonas, et al.
(författare)
-
Backhaul evolution
- 2017
-
Ingår i: Ericsson Review (English Edition). - 0014-0171. ; 95:2, s. 24-36
-
Tidskriftsartikel (övrigt vetenskapligt/konstnärligt)abstract
- Microwave backhaul technology plays a significant role in providing reliable mobile network performance and is well prepared to support both the evolution of LTE and the introduction of 5G. Work has now started on the longer-term use of frequencies beyond 100GHz, targeting the support of 5G evolution toward 2030.
|
|
| 7. |
- Farjana, Sadia, 1983, et al.
(författare)
-
Realizing a 140 GHz Gap Waveguide–Based Array Antenna by Low-Cost Injection Molding and Micromachining
- 2021
-
Ingår i: Journal of Infrared, Millimeter and Terahertz Waves. - : Springer. - 1866-6892 .- 1866-6906. ; 42:8, s. 893-914
-
Tidskriftsartikel (refereegranskat)abstract
- This paper presents a novel micromachining process to fabricate a 140 GHz planar antenna based on gap waveguide technology to be used in the next-generation backhauling links. The 140 GHz planar array antenna consists of three layers, all of which have been fabricated using polymer-based microfabrication and injection molding. The 140 GHz antenna has the potential to be used as an element in a bigger 3D array in a line-of-sight (LOS) multiple input multiple output (MIMO) configuration to boost the network capacity. In this work, we focus on the fabrication of a single antenna array element based on gap waveguide technology. Depending on the complexity of each antenna layer’s design, three different micromachining techniques, SU8 fabrication, polydimethylsiloxane (PDMS) molding, and injection molding of the polymer (OSTEMER), together with gold (Au) coating, have been utilized to fabricate a single 140 GHz planar array antenna. The input reflection coefficient was measured to be below − 11 dB over a 14% bandwidth from 132 to 152 GHz, and the antenna gain was measured to be 31 dBi at 140 GHz, both of which are in good agreement with the simulations. © 2021, The Author(s).
|
|
| 8. |
- Ghoraishi, Mir, et al.
(författare)
-
Towards versatile access networks (Chapter 3)
- 2023
-
Ingår i: Towards Sustainable and Trustworthy 6G: Challenges, Enablers, and Architectural Design. - 9781638282396 ; , s. 40-120
-
Bokkapitel (övrigt vetenskapligt/konstnärligt)abstract
- Compared to its previous generations, the 5th generation (5G) cellular network features an additional type of densification, i.e., a large number of active antennas per access point (AP) can be deployed. This technique is known as massive multipleinput multiple-output (mMIMO) [1]. Meanwhile, multiple-input multiple-output (MIMO) evolution, e.g., in channel state information (CSI) enhancement, and also on the study of a larger number of orthogonal demodulation reference signal (DMRS) ports for MU-MIMO, was one of the Release 18 of 3rd generation partnership project (3GPP Rel-18) work item. This release (3GPP Rel-18) package approval, in the fourth quarter of 2021, marked the start of the 5G Advanced evolution in 3GPP. The other items in 3GPP Rel-18 are to study and add functionality in the areas of network energy savings, coverage, mobility support, multicast broadcast services, and positioning
|
|
| 9. |
|
|
| 10. |
- He, Zhongxia Simon, 1984, et al.
(författare)
-
A 14 Gbps On-/Off- Keying Modulator in GaAs HBT Technology
- 2012
-
Ingår i: IEEE Microwave and Wireless Components Letters. - : Institute of Electrical and Electronics Engineers (IEEE). - 1558-1764 .- 1531-1309. ; 22:5, s. 272-274
-
Tidskriftsartikel (refereegranskat)abstract
- A proof of concept on-/off- keying (OOK) modulator is designed and implemented in a commercial heterojunction bipolar transistors IC process. The modulator circuit consists of an amplifier/latch structure, which is used as an OOK modulator for the first time. One of its advantages is that the topology may be implemented in both field effect transistor and bipolar technology. The measurement results correspond well with simulation and show that the modulator is capable of handling carrier frequencies up to 28 GHz, and data rates up to 14 Gbps. The isolation of the modulator in the off-state is better than 27 dB over the whole frequency range.
|
|
