| 1. |
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| 2. |
- Beal, Jacob, et al.
(författare)
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Robust estimation of bacterial cell count from optical density
- 2020
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Ingår i: Communications Biology. - : Springer Science and Business Media LLC. - 2399-3642. ; 3:1
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Tidskriftsartikel (refereegranskat)abstract
- Optical density (OD) is widely used to estimate the density of cells in liquid culture, but cannot be compared between instruments without a standardized calibration protocol and is challenging to relate to actual cell count. We address this with an interlaboratory study comparing three simple, low-cost, and highly accessible OD calibration protocols across 244 laboratories, applied to eight strains of constitutive GFP-expressing E. coli. Based on our results, we recommend calibrating OD to estimated cell count using serial dilution of silica microspheres, which produces highly precise calibration (95.5% of residuals <1.2-fold), is easily assessed for quality control, also assesses instrument effective linear range, and can be combined with fluorescence calibration to obtain units of Molecules of Equivalent Fluorescein (MEFL) per cell, allowing direct comparison and data fusion with flow cytometry measurements: in our study, fluorescence per cell measurements showed only a 1.07-fold mean difference between plate reader and flow cytometry data.
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| 3. |
- Hou, Jungang, et al.
(författare)
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Atomically Thin Mesoporous In2O3-x/In2S3 Lateral Heterostructures Enabling Robust Broadband-Light Photo-Electrochemical Water Splitting
- 2018
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Ingår i: Advanced Energy Materials. - : Wiley-VCH Verlagsgesellschaft. - 1614-6832 .- 1614-6840. ; 8:9
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Tidskriftsartikel (refereegranskat)abstract
- Atomically thin 2D heterostructures have opened new realms in electronic and optoelectronic devices. Herein, 2D lateral heterostructures of mesoporous In2O3-x/In2S3 atomic layers are synthesized through the in situ oxidation of In2S3 atomic layers by an oxygen plasma-induced strategy. Based on experimental observations and theoretical calculations, the prolonged charge carrier lifetime and increased electron density reveal the efficient photoexcited carrier transport and separation in the In2O3-x/In2S3 layers by interfacial bonding at the atomic level. As expected, the synergistic structural and electronic modulations of the In2O3-x/In2S3 layers generate a photocurrent of 1.28 mA cm(-2) at 1.23 V versus a reversible hydrogen electrode, nearly 21 and 79 times higher than those of the In2S3 atomic layers and bulk counterpart, respectively. Due to the large surface area, abundant active sites, broadband-light harvesting ability, and effective charge transport pathways, the In2O3-x/In2S3 layers build efficient pathways for photoexcited charge in the 2D semiconductive channels, expediting charge transport and kinetic processes and enhancing the robust broadband-light photo-electrochemical water splitting performance. This work paves new avenues for the exploration and design of atomically thin 2D lateral heterostructures toward robust photo-electrochemical applications and solar energy utilization.
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| 4. |
- Hou, Jungang, et al.
(författare)
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In Situ Phase-Induced Spatial Charge Separation in Core-Shell Oxynitride Nanocube Heterojunctions Realizing Robust Solar Water Splitting
- 2017
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Ingår i: Advanced Energy Materials. - : WILEY-V C H VERLAG GMBH. - 1614-6832 .- 1614-6840. ; 7:17
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Tidskriftsartikel (refereegranskat)abstract
- Efficient spatial charge separation is critical for solar energy conversion over solid photocatalysts. The development of efficient visible-light photocatalysts has been of immense interest, but with limited success. Here, multiband core-shell oxynitride nanocube heterojunctions composed of a tantalum nitride (Ta3N5) core and nitrogen-doped sodium tantalate (NaTaON) shell have been constructed via an in situ phase-induced etching chemical strategy. The photocatalytic water splitting performance of sub-20-nm Ta3N5@NaTaON junctions exhibits an extraordinarily high photocatalytic activity toward oxygen and hydrogen evolution. Most importantly, the combined experimental results and theoretical calculations reveal that the strong interfacial Ta-O-N bonding connection as a touchstone among Ta3N5@NaTaON junctions provides a continuous charge transport pathway rather than a random charge accumulation. The prolonged photoexcited charge carrier lifetime and suitable band matching between the Ta3N5 core and NaTaON shell facilitate the separation of photoinduced electron-hole pairs, accounting for the highly efficient photocatalytic performance. This work establishes the use of (oxy)nitride heterojunctions as viable photocatalysts for the conversion of solar energy into fuels.
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| 5. |
- Hou, Jungang, et al.
(författare)
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Inorganic Colloidal Perovskite Quantum Dots for Robust Solar CO2 Reduction
- 2017
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Ingår i: Chemistry - A European Journal. - : Wiley-VCH Verlagsgesellschaft. - 0947-6539 .- 1521-3765. ; 23:40, s. 9481-9485
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Tidskriftsartikel (refereegranskat)abstract
- Inorganic perovskite quantum dots as optoelectronic materials have attracted enormous attention in light-harvesting and emitting devices. However, photocatalytic conversion based on inorganic perovskite halides has not been reported. Here, we have synthesized colloidal quantum dots (QDs, 3-12 nm) of cesium lead halide perovskites (CsPbBr3) as a new type of photocatalytic material. The band gap energies and photoluminescence (PL) spectra are tunable over the visible spectral region according to quantum size effects on an atomic scale. The increased carrier lifetime revealed by time-resolved PL spectra, indicates the efficient electron-hole separation and transfer. As expected, the CsPbBr3 QDs with high selectivity of greater than 99% achieve an efficient yield of 20.9 mmolg(-1) towards solar CO2 reduction. This work has opened a new avenue for inorganic colloidal perovskite materials as efficient photocatalysts to convert CO2 into valuable fuels.
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| 6. |
- Wang, Shu Min, 1963, et al.
(författare)
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Phosphorus and Nitrogen Containing Dilute Bismides
- 2019
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Ingår i: Springer Series in Materials Science. - Singapore : Springer Singapore. - 2196-2812 .- 0933-033X. ; 285, s. 97-123
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Bokkapitel (övrigt vetenskapligt/konstnärligt)abstract
- Phosphorus and nitrogen containing dilute bismides differ from arsenic and antimony containing bismides in that the anions have large differences in atomic size and electronegativity, offering rich potentials for strain as well as bandgap engineering. In this chapter, we show theoretical modeling, epitaxy and characterizations of III-PBi and III-NBi and their quaternary alloys.
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| 7. |
- Xu, Yalong, et al.
(författare)
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Simultaneously Improved Efficiency and Stability in All-Polymer Solar Cells by a P-i-N Architecture
- 2019
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Ingår i: ACS Energy Letters. - : AMER CHEMICAL SOC. - 2380-8195. ; 4:9, s. 2277-2286
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Tidskriftsartikel (refereegranskat)abstract
- All-polymer organic solar cells offer exceptional stability. Unfortunately, the use of bulk heterojunction (BHJ) structure has the intrinsic challenge to control the side-chain entanglement and backbone orientation to achieve sophisticated phase separation in all-polymer blends. Here, we revealed that the P-i-N structure can outperform the BHJ ones with a nearly 50% efficiency improvement, reaching a power conversion efficiency approaching 10%. This P-i-N structure can also provide an enhanced internal electric field and remarkably stable morphology Sequential deposition under harsh thermal stress. We have further demonstrated generality of the P-i-N structure in several other all-polymer systems. Considering the adjustable polymer molecular weight and solubility, the P-i-N device structure can be more beneficial for all-polymer systems. With the design of more crystalline polymers, the antiquated P-i-N structure can further show its strength in all-polymer systems by simplified morphology control and improved carrier extraction, becoming a more favorite device structure than the dominant BHJ structure.
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| 8. |
- Zhao, Shuyan, et al.
(författare)
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Stress and strain analysis of Si-based III - V template fabricated by ion-slicing
- 2020
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Ingår i: Chinese Physics B. - : IOP Publishing. - 1674-1056. ; 29:7
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Tidskriftsartikel (refereegranskat)abstract
- Strain and stress were simulated using finite element method (FEM) for three III-V-on-Insulator (III-VOI) structures, i.e., InP/SiO2/Si, InP/Al2O3/SiO2/Si, and GaAs/Al2O3/SiO2/Si, fabricated by ion-slicing as the substrates for optoelectronic devices on Si. The thermal strain/stress imposes no risk for optoelectronic structures grown on InPOI at a normal growth temperature using molecular beam epitaxy. Structures grown on GaAsOI are more dangerous than those on InPOI due to a limited critical thickness. The intermedia Al2O3 layer was intended to increase the adherence while it brings in the largest risk. The simulated results reveal thermal stress on Al2O3 over 1 GPa, which is much higher than its critical stress for interfacial fracture. InPOI without an Al2O3 layer is more suitable as the substrate for optoelectronic integration on Si.
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