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- Andersson, Niklas, 1970, et al.
(författare)
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Investigation of central versus peripheral effects of estradiol in ovariectomized mice
- 2005
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Ingår i: J Endocrinol. - : Bioscientifica. - 0022-0795 .- 1479-6805. ; 187:2, s. 303-9
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Tidskriftsartikel (refereegranskat)abstract
- It is generally believed that estrogens exert their bone sparing effects directly on the cells within the bone compartment. The aim of the present study was to investigate if central mechanisms might be involved in the bone sparing effect of estrogens. The dose-response of central (i.c.v) 17beta-estradiol (E2) administration was compared with that of peripheral (s.c.) administration in ovariectomized (ovx) mice. The dose-response curves for central and peripheral E2 administration did not differ for any of the studied estrogen-responsive tissues, indicating that these effects were mainly peripheral. In addition, ovx mice were treated with E2 and/or the peripheral estrogen receptor antagonist ICI 182,780. ICI 182,780 attenuated most of the estrogenic response regarding uterus weight, retroperitoneal fat weight, cortical BMC and trabecular bone mineral content (P<0.05). These findings support the notion that the primary target tissue that mediates the effect of E2 on bone is peripheral and not central.
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| 2. |
- Audouin, L., et al.
(författare)
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High-precision measurement of isotopic fission yields of 236 U
- 2018
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Ingår i: EPJ Web of Conferences. - : EDP Sciences. - 2101-6275 .- 2100-014X. ; 193
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Konferensbidrag (refereegranskat)abstract
- We report on the second SOFIA experiment, dedicated to the fission yields of 236U∗, analog to 235U(n,f). The measurement is based on the inverse kinematics method, using a relativistic, secondary beam of 236U. Both fission fragments are identified in mass and charge in the SOFIA recoil spectrometer. The obtained isotopic yields are compared with existing spectroscopy measurements and the elemental yields are used to discuss the treatment of the even-odd effect with energy in nuclear data libraries.
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| 6. |
- Lindberg, Hans, 1977
(författare)
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High Power, Long Wavelength Semiconductor Disk Lasers for Continuous and Mode-Locked Operation
- 2006
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Doktorsavhandling (övrigt vetenskapligt/konstnärligt)abstract
- The semiconductor disk laser has recentlyemerged as an attractive alternative to bulky and power consuming gas and solid state lasers. It offers compact, powerful and efficient devices with W level output power and beam properties earlier not achieved with semiconductor lasers. The concept of using an external laser cavity together with a semiconductor gain chip also opens up possibilities to integrate additional elements in the cavity for improved functionality, for instance wavelength conversion to accomplish emission at otherwise hard to reach visible wavelengths, or to stabilize the emission wavelength of the device. Another technique that is currently subject to intense research is that of passive mode-locking with a saturable absorber to force the laser to emit a train of short pulses instead of continuous emission. The repetition frequency of such a pulse source is set by the round trip time in the laser cavity and is in the GHz range. The concept therefore enables high repetition rate optical pulse sources without the use of any high speed electronics. Although continuous and mode-locked devices with emission wavelengths around 1 µm have successfully been demonstrated, the long wavelength (1.5 µm) devices have suffered from the poor thermal properties of the semiconductor materials used. This thesis describes the design and performance of such long wavelength devices with emphasis on improvements in thermal management schemes to achieve a high output power. We also show how the technique to reduce the thermal impedance simultaneously can improve the spectral properties of the device and stabilize the emission wavelength and as much as 470 mW of single frequency output power was achieved. In the last part of the work a passively mode-locked device emitting near chirp free pulses at a repetition frequency of 3 GHz and an average output power of 120 mW is presented along with the characterization of the semiconductor saturable absorber mirror used to sustain the mode-locking.
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| 7. |
- Lindberg, Hans, 1977, et al.
(författare)
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High-power optically pumped 1550-nm VECSEL with a bonded silicon heat spreader
- 2004
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Ingår i: IEEE Photonics Technology Letters. - 1041-1135 .- 1941-0174. ; 16:5, s. 1233-1235
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Tidskriftsartikel (refereegranskat)abstract
- We present an optically pumped 1550-nm vertical-external-cavity surface-emitting laser with improved output power and operating temperature using a bonded heat spreader. The laser comprises an InGaAsP-based gain element, with a resonant periodic gain structure on top of a distributed Bragg reflector, and a high reflectivity spherical mirror as the external reflector. Heat transport is enhanced by a Si heat spreader bonded to the InGaAsP surface by liquid capillary bonding. Optical pumping is achieved using a 1250-nm fiber Raman laser. A maximum continuous output power of 250 mW was obtained under multitransverse mode operation at 240 K. Under operation in the fundamental near-Gaussian mode, we obtained a maximum power of 230 mW with a beam quality factor (M-2) of 1.22. At room temperature, the output power was limited to 12 mW.
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| 8. |
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| 9. |
- Lindberg, Hans, 1977, et al.
(författare)
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InP-based optically pumped VECSEL operating CW at 1550 nm
- 2004
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Ingår i: IEEE Photonics Technology Letters. - 1041-1135 .- 1941-0174. ; 16:2, s. 362-364
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Tidskriftsartikel (refereegranskat)abstract
- We present a vertical external-cavity surface-emitting laser operating at 1550 run. The laser comprises an InGaAsP-based gain element, with a resonant periodic gain structure on top of a distributed Bragg reflector, and a high reflectivity spherical mirror as the external reflector. Optical pumping is achieved using a 1250-nm fiber Raman laser. A maximum continuous output power of 70 mW was obtained under multitransverse mode operation at 233 K. Under single-mode operation, we obtained a maximum power of 60 mW with a beam quality factor M-2 less than 1.1.
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