| 1. |
- Zhou, Jingjian, 1993-
(författare)
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Luminescent Silicon Nanocrystals: From Single Quantum Dot to Light-harvesting Devices
- 2022
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Doktorsavhandling (övrigt vetenskapligt/konstnärligt)abstract
- Silicon (Si) serves as the basic material of the system-on-a-chip industry and photovoltaic panels nowadays. This is mostly thanks to its high abundance in the earth’s crust, thereby low cost, virtually non-toxicity, and superior stability. Nano-silicon, especially silicon quantum dots (Si QDs), is endowed by the quantum confinement effect with the ability to emit light efficiently under photoexcitation, different from the bulk counterpart. The bright photoluminescence (PL), first found in the 1990s, has paved the way for this nanomaterial to be applied for light conversions in the last decades, such as for biosensing/biolabeling, light emitting diodes and luminescent solar concentrators (LSCs). The latter is used to concentrate sunlight in the slab on the edge-attached solar cells by means of PL. This thesis, on the one hand, deepens the comprehension on the optical properties of Si QDs by single-dot spectroscopy; on the other hand, a low-cost mass synthesis of high-quality Si QDs is developed here, which favors high QD loading applications, demonstrated as large-area “quantum dot glass”. First, the photo-physics mechanism behind PL was studied by single-dot spectroscopy, excluding the QD size inhomogeneity in the ensemble measurements. A new method was developed to fabricate large-area (~mm2) isolated oxide-passivated Si QDs on a silicon-on-insulator wafer. Linearly polarized PLs were observed on those single dots. System-limited PL linewidths, ~250 μeV, were measured at 10 K on QDs here, indicating a good quality of oxide shell endowed by high temperature annealing. Based on this method, it is possible to modify the ambient optical environment of QDs without tenuous alignments. With Si QDs residing on a metal membrane with an oxide spacer, the PL yields of single dots were enhanced ~10 times in average compared to those residing outside the membrane. Next, we have achieved, for the first time, direct observation on the temperature-dependent radiative lifetimes on single ligand-passivated Si QDs. Most importantly, these single-dot PL decays can be well-fitted mono-exponentially, indicating trap-free dynamics, as opposite to oxide-passivated counterparts. Secondly, a chemical synthesis method of ligand-passivated Si QDs by using triethoxysilane (TES) as precursors is introduced. The quantum yield of as-synthesized Si QDs is ~40% in solution and ~55% in Si QDs/polymer nanocomposites. Such QDs have near-unity internal quantum efficiency both in the liquid and solid phase. With a comparably good quality of Si QDs, the QD cost of this TES method is about an order of magnitude less expensive than that of the established HSQ method. Finally, the application of Si QDs in photovoltaic devices was demonstrated. A 9 × 9 × 0.6 cm3 LSC device based on Si QDs was fabricated, delivering ~7.9% optical power conversion efficiency under one standard sun. This performance is very similar to the state of the art of direct-bandgap semiconductor QDs. To further expand the application area of this kind of transparent photovoltaic devices, a concept of transparent “quantum dot glass” (TQDG) is introduced, fulfilling requirements as both power-generating components and building construction materials. A 20 × 20 × 1 cm3 TQDG device was fabricated with the overall power conversion efficiency up to 1.57% and the average visible transmittance 84%. The light utilization efficiency (LUE) is 1.3%, which is among the top reported TPVs based on the LSC technology with a similar size. Moreover, to facilitate the characterization of large-area LSC-like light-harvesting devices a new concept of an “optical center” is introduced. A procedure of whole device PCE estimates from optical center excitation measurements with basic laboratory instruments was provided, with a negligible error to the measured one by the conventional method.
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| 2. |
- Pevere, Federico
(författare)
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Optical Properties of Single Silicon Quantum Dots
- 2018
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Doktorsavhandling (övrigt vetenskapligt/konstnärligt)abstract
- For over 60 years silicon (Si) has dominated the semiconductor microelectronics industry mainly due to its abundance and good electrical and material properties. The advanced processing technology of Si has made it the workhorse for photovoltaics industry as well. However, this material has also a big drawback: it is an indirect-bandgap semiconductor in its bulk form, hence an inefficient light emitter. This has hindered the silicon photonics revolution envisioned in 1980s, where photons were thought to replace electrons inside computer chips.In parallel with the exponential scaling of Si transistor's size over the years, the discovery of quantum phenomena at the nanoscale raised new hopes for this semiconductor. In the 1990s bright luminescence from nanostructured porous Si was demonstrated claiming the quantum confinement effect as origin of the emission. Since then, an intense research activity has been focused on Si quantum dots (Si-QDs) due to their potential use as abundant and non-toxic light emitters. More precisely, they could be used as fluorescent biolabels in biomedicine, as light-emitting phosphors in e.g. TV screens or as down-converters in luminescent solar concentrators. Nevertheless, in order to realize such applications, it is necessary not only to improve the fabrication of Si-QDs but also to gain a better understanding of their photo-physics. Among different types of optical measurements, those performed at the single-dot level are free of sample inhomogeneities, hence more accurate for a correct physical description.This doctoral thesis presents a study of the optical properties of single Si-QDs of different type: encapsulated in an oxide matrix, capped with ligands or covered by a thin passivation layer. The homogeneous photoluminescence (PL) linewidth is found to strongly depend on the type of embedding matrix, being narrower for less rigid ones. A record resolution-limited linewidth of ~200 μeV is measured at low temperatures whereas room-temperature values can even compete with direct-bandgap QDs like CdSe. Such narrow PL lines exhibit intensity saturation at high excitation fluxes without any indication of emission from multiexciton states, suggesting the presence of fast non-radiative Auger recombination. Characteristic Auger-related lifetimes extracted from power-dependent decays show a variation from dot-to-dot and confirm the low biexciton quantum efficiency.For the first time, the absorption curve of single Si-QDs is probed by means of photoluminescence excitation in the range 2.0-3.5 eV. A step-like structure is found which depends on the nanocrystal shape considered and agrees well with simulations of the exciton level structure. Rod-like Si-QDs can exhibit ~50 times higher absorption than spherical-like ones due to local field effects and enhanced optical transitions. In contrast with previous studies, evidence of a direct-bandgap red-shift for small Si-QDs is missing at the single dot level, in agreement with atomistic calculations.Low-temperature PL decay measurements reveal no triplet-like emission lines, but two ~μs decay constants appearing at low temperatures. They suggest presence of a temperature-dependent fast blinking process based on trapping/detrapping of carriers in the oxide matrix, leading to delayed emission. The proposed model allows to extract characteristic trapping/de-trapping rates for Si-QDs featuring mono-exponential blinking statistics. From PL saturation curves, ligand-passivated Si-QDs do not exhibit such detrimental phenomenon, in agreement with the proposed model.Last, Si-QDs demonstrate to be very hard against ~10 keV X-ray radiation, in contrast with CdSe-QDs whose PL quenching is correlated with a change in the blinking parameters. This property could be exploited for example in space applications, where radiation-hard materials are required.To conclude, the results achieved in this thesis will help to understand and engineer the properties of Si-QDs whose application potential has increased after several years of research both at the ensemble and at the single-dot level.
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| 3. |
- Ciobanu, V., et al.
(författare)
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Large-Sized Nanocrystalline Ultrathin β-Ga2 O3 Membranes Fabricated by Surface Charge Lithography
- 2022
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Ingår i: Nanomaterials. - : MDPI AG. - 2079-4991. ; 12:4
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Tidskriftsartikel (refereegranskat)abstract
- Large-sized 2D semiconductor materials have gained significant attention for their fascinat-ing properties in various applications. In this work, we demonstrate the fabrication of nanoperforated ultrathin β-Ga2 O3 membranes of a nanoscale thickness. The technological route includes the fabrication of GaN membranes using the Surface Charge Lithography (SCL) approach and subsequent thermal treatment in air at 900◦ C in order to obtain β-Ga2 O3 membranes. The as-grown GaN membranes were discovered to be completely transformed into β-Ga2 O3, with the morphology evolving from a smooth topography to a nanoperforated surface consisting of nanograin structures. The oxidation mechanism of the membrane was investigated under different annealing conditions followed by XPS, AFM, Raman and TEM analyses.
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| 4. |
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