1. |
- Aleksich, Mariya, et al.
(författare)
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XFEL Microcrystallography of Self-Assembling Silver n-Alkanethiolates
- 2023
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Ingår i: Journal of the American Chemical Society. - 0002-7863. ; 145:31, s. 17042-17055
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Tidskriftsartikel (refereegranskat)abstract
- New synthetic hybrid materials and their increasing complexity have placed growing demands on crystal growth for single-crystal X-ray diffraction analysis. Unfortunately, not all chemical systems are conducive to the isolation of single crystals for traditional characterization. Here, small-molecule serial femtosecond crystallography (smSFX) at atomic resolution (0.833 Å) is employed to characterize microcrystalline silver n-alkanethiolates with various alkyl chain lengths at X-ray free electron laser facilities, resolving long-standing controversies regarding the atomic connectivity and odd-even effects of layer stacking. smSFX provides high-quality crystal structures directly from the powder of the true unknowns, a capability that is particularly useful for systems having notoriously small or defective crystals. We present crystal structures of silver n-butanethiolate (C4), silver n-hexanethiolate (C6), and silver n-nonanethiolate (C9). We show that an odd-even effect originates from the orientation of the terminal methyl group and its role in packing efficiency. We also propose a secondary odd-even effect involving multiple mosaic blocks in the crystals containing even-numbered chains, identified by selected-area electron diffraction measurements. We conclude with a discussion of the merits of the synthetic preparation for the preparation of microdiffraction specimens and compare the long-range order in these crystals to that of self-assembled monolayers.
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2. |
- Danielsson, Erik, et al.
(författare)
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Dry etching and metallization schemes in a GaN/SiC heterojunction device process
- 2000
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Ingår i: Materials Science Forum. - : Trans Tech Publications Inc.. - 0255-5476 .- 1662-9752. ; 338-342, s. 1049-1052
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Tidskriftsartikel (refereegranskat)abstract
- Dry etching and metallization schemes are described for a GaN/SiC heterojunction. GaN was reactive ion etched in a chlorine based chemistry (Cl2/Ar), and an ICP etch was used on 4H-SiC using a fluorine based chemistry (SF6/Ar/O2). The etch rates obtained on GaN was above 400 nm/min. High sample temperature from self heating and large dc-bias was the probable cause for the high etch rate. The ICP etch rate on SiC approached 320 nm/min, and the etch selectivity to GaN was >100. The metallization was based on Ti for both n-GaN and p-SiC. TLM and Kelvin structures were used to extract the specific contact resistivity, ÏC. After a 950 °C anneal in N2 ÏC on the GaN samples were below 1·10-6 Ωcm2 for sputtered contacts in room temperature, and an order of magnitude higher with evaporation. On p-SiC no ohmic behavior was found with a doping of 4·1018 cm-3, but the same contact metallization on highly doped areas (>1020 cm-3) showed ohmic behavior with ÏC below 10-4 Ωcm2.
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