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- Bengtsson, Olof, et al.
(författare)
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Small Signal and Power Evaluation of Novel BiCMOS Compatible, Short Channel LDMOS Technology
- 2003
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Ingår i: IEEE transactions on microwave theory and techniques. - 0018-9480 .- 1557-9670. ; 51:3, s. 1052-1056
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Tidskriftsartikel (refereegranskat)abstract
- We describe a very short-channel 0.15-mum LDMOS transistor with a breakdown voltage of up to 60 V, manufactured in a standard 0.35-mum BiCMOS process. At 1900 MHz and a 12-V supply voltage, the 0.4-mm-gatewidth device with shortest drain drift region gives 100-mW output power P-1 dB at a drain efficiency of 43%. It has a transducer power gain of over 20 dB. The maximum current gain cutoff frequency f(T) is 15 GHz, and the maximum available gain cutoff frequency f(MAX) is 38 GHz. We show the dependence of f(T), an f(MAX) of gate and drain bias for transistors with different-drain drift region length. The LDMOS process module does not affect the performance or the models of other devices. We present for the first time a simple way to create high-voltage high-performance LDMOS transistors for an RF power amplifier use even in a very downscaled silicon technology.
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| 4. |
- Ghatnekar-Nilsson, Sara, et al.
(författare)
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A new multifunctional platform based on high-aspect ratio interdigitated NEMS structures
- 2009
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Ingår i: Nanotechnology. - : IOP Publishing. - 0957-4484 .- 1361-6528. ; 20:17
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Tidskriftsartikel (refereegranskat)abstract
- A multifunctional NEMS platform based on a mass-producible, surface relief grating has been developed and fabricated directly in polymer materials. The pattern consists of high aspect ratio interdigitated nanometer-sized pairs of walls and can be produced in a low-complexity one-step patterning process with nanoimprint lithography. In this paper, we demonstrate the usefulness of the platform primarily by showing an application as a high-sensitivity mass sensor in air. The sensors, which are based on the high frequency resonant response of around 200 MHz, show a mass responsivity of the order of 0.1 Hz/zg per wall at room temperature and in ambient air. Their ability to selectively adsorb airborne target molecules, such as thiols, is also demonstrated. We also show that the same device can function as a varactor for electronic circuits based on its large tunable capacitive range.
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| 6. |
- Litwin, Andrej, et al.
(författare)
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Novell BiCMOS Compatible, Short Channel LDMOS Technology for Medium Voltage RF & Power Applications
- 2002
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Ingår i: IEEE MTT-S Digest. ; , s. 35-38
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Konferensbidrag (refereegranskat)abstract
- We describe a very short channel, 0.15 μm, LDMOS transistor, with a breakdown voltage of up to 45 V, manufactured in a standard 0.35 μm BiCMOS process. At 1900 MHz and a 12V supply voltage the 0.4mm gate width device gives 100 mW output power P1 dB at a drain efficiency of 43%. It has a transducer power gain of more than 20dB and a current gain cutoff frequency, fT, of 13 GHz. The maximum available gain cutoff frequency, fMAX, is 27 GHz. The LDMOS process module does not affect the performance or models of other devices. We present for the first time a simple way to create high voltage, high performance LDMOS transistors for RF power amplifier use even in a very downscaled silicon technology.
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| 7. |
- Vestling, Lars, 1970-
(författare)
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Design and Modeling of High-Frequency LDMOS Transistors
- 2002
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Doktorsavhandling (övrigt vetenskapligt/konstnärligt)abstract
- The lateral double-diffused MOS (LDMOS) transistor has traditionally been a high-voltage device used in switching applications. The use as a high-frequency device has become more important lately since the LDMOS offers an low cost solution for telecommunication applications. An important property of the LDMOS concept is that it can be manufactured in virtually the same process used in standard CMOS production. It only requires one extra process step, which is easily implemented. The other important aspect that gives the LDMOS the good high-frequency performance is that the channel length is a process parameter and not a lithography parameter. This thesis investigates the LDMOS transistor primarily from two aspects. The first is the high-voltage performance. For a high-voltage device the most important parameter is the breakdown voltage. The second most important parameter is the on-resistance that has the property of being in contradiction of the breakdown voltage and usually trade-offs are made to achieve acceptable performance. In the thesis several methods to improve the breakdown voltage/on-resistance relation are presented. The other part covers the high-frequency behavior of the LDMOS transistor. High-frequency characterization has been made to gain valuable information for the fundamental understanding of the physical mechanisms inside the transistor. A large part of the thesis covers modeling and parameter extraction of the devices. A new general method for parameter extraction of small-signal equivalent circuit models is presented, which has the appealing properties of not needing any approximation during the extraction which is common with other techniques.
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