| 1. |
- Chen, Jialin, et al.
(författare)
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Characterization and comparison of post-natal rat Achilles tendon-derived stem cells at different development stages
- 2016
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Ingår i: Scientific Reports. - : Springer Science and Business Media LLC. - 2045-2322. ; 6
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Tidskriftsartikel (refereegranskat)abstract
- Tendon stem/progenitor cells (TSPCs) are a potential cell source for tendon tissue engineering. The striking morphological and structural changes of tendon tissue during development indicate the complexity of TSPCs at different stages. This study aims to characterize and compare post-natal rat Achilles tendon tissue and TSPCs at different stages of development. The tendon tissue showed distinct differences during development: the tissue structure became denser and more regular, the nuclei became spindle-shaped and the cell number decreased with time. TSPCs derived from 7 day Achilles tendon tissue showed the highest self-renewal ability, cell proliferation, and differentiation potential towards mesenchymal lineage, compared to TSPCs derived from 1 day and 56 day tissue. Microarray data showed up-regulation of several groups of genes in TSPCs derived from 7 day Achilles tendon tissue, which may account for the unique cell characteristics during this specific stage of development. Our results indicate that TSPCs derived from 7 day Achilles tendon tissue is a superior cell source as compared to TSPCs derived from 1 day and 56 day tissue, demonstrating the importance of choosing a suitable stem cell source for effective tendon tissue engineering and regeneration.
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| 2. |
- Terenius, Olle, et al.
(författare)
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RNA interference in Lepidoptera : An overview of successful and unsuccessful studies and implications for experimental design
- 2011
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Ingår i: Journal of insect physiology. - : Elsevier BV. - 0022-1910 .- 1879-1611. ; 57:2, s. 231-245
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Tidskriftsartikel (refereegranskat)abstract
- Gene silencing through RNA interference (RNAi) has revolutionized the study of gene function, particularly in non-model insects. However, in Lepidoptera (moths and butterflies) RNAi has many times proven to be difficult to achieve. Most of the negative results have been anecdotal and the positive experiments have not been collected in such a way that they are possible to analyze. In this review, we have collected detailed data from more than 150 experiments including all to date published and many unpublished experiments. Despite a large variation in the data, trends that are found are that RNAi is particularly successful in the family Saturniidae and in genes involved in immunity. On the contrary, gene expression in epidermal tissues seems to be most difficult to silence. In addition, gene silencing by feeding dsRNA requires high concentrations for success. Possible causes for the variability of success in RNAi experiments in Lepidoptera are discussed. The review also points to a need to further investigate the mechanism of RNAi in lepidopteran insects and its possible connection to the innate immune response. Our general understanding of RNAi in Lepidoptera will be further aided in the future as our public database at http://insectacentral.org/RNAi will continue to gather information on RNAi experiments.
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| 3. |
- Yong, Zhihua, et al.
(författare)
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Tuning oxygen vacancies and resistive switching properties in ultra-thin HfO2 RRAM via TiN bottom electrode and interface engineering
- 2021
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Ingår i: Applied Surface Science. - : Elsevier BV. - 1873-5584 .- 0169-4332. ; 551
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Tidskriftsartikel (refereegranskat)abstract
- Resistive random access memory (RRAM) technologies based on non-volatile resistive filament redox switching oxides have the potential of drastically improving the performance of future mass-storage solutions. However, the physico-chemical properties of the TiN bottom metal electrode (BME) can significantly alter the resistive switching (RS) behavior of the oxygen-vacancy RRAM devices, yet the correlation between RS and the physico-chemical properties of TiN and HfOx/TiN interface remains unclear. Here, we establish this particular correlation via detailed material and electrical characterization for the purpose of achieving further performance enhancement of the stack integration. Two types of RRAM stacks were fabricated where the TiN BME was fabricated by physical vapor deposition (PVD) and atomic layer deposition (ALD), respectively. The HfOx layer in HfOx/PVD-TiN is more oxygen deficient than that of the HfOx/ALD-TiN because of more defective PVD-TiN and probably because pristine ALD-TiN has a thicker TiO2 overlayer. Higher concentration of oxygen vacancies induces a larger magnitude of band bending at the HfOx/PVD-TiN interface and leads to the formation of a higher Schottky barrier. Pulsed endurance measurements of up to 106 switches, with 10 μA ± 1.0 V pulses, demonstrate the potential of the studied ultra-thin-HfOx/TiN device stack for dense, large scale, and low-power memory integration.
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