| 1. |
- Carmody, C., et al.
(författare)
-
Structural, electrical, and optical analysis of ion implanted semi-insulating InP
- 2004
-
Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 95:2, s. 477-482
-
Tidskriftsartikel (refereegranskat)abstract
- Semi-insulating InP was implanted with MeV P, As, Ga, and In ions, and the resulting evolution of structural properties with increased annealing temperature was analyzed using double crystal x-ray diffractometry and cross sectional transmission electron microscopy. The types of damage identified are correlated with scanning spreading resistance and scanning capacitance measurements, as well as with previously measured Hall effect and time resolved photoluminescence results. We have identified multiple layers of conductivity in the samples which occur due to the nonuniform damage profile of a single implant. Our structural studies have shown that the amount and type of damage caused by implantation does not scale with implant ion atomic mass.
|
|
| 2. |
- Douheret, Oliver, et al.
(författare)
-
Electrical characterisation of III-V buried heterostructure lasers by scanning capacitance microscopy
- 2005
-
Ingår i: Scanning Probe Microscopy. - 1402030177 ; , s. 413-
-
Konferensbidrag (refereegranskat)abstract
- In this work, cross-sectional scanning capacitance microscopy (SCM) is used to investigate GaAs/AlGaAs buried heterostructure (BH) lasers regrown with semi-insulating GaInP:Fe. The basic principles involved in the SCM methodology are first introduced, including resolution. The concept of doping contrast in SCM is experimentally demonstrated using InP doping staircase structure where in the doping in the different layers covers a reasonably wide dynamic range [similar to 10(18) cm(-3) to similar to 10(16) cm(-3)]. The capability of SCM to achieve complete electrical characterization of complex optoelectronic devices is then established using BH GaAs based lasers as an example. It is shown that a complete 2D map of the electrical properties of device structure, including delineation of regrown interfaces and the electrical nature of the regrown GaInP layer can be obtained. Characteristic peaks in the SCM signal (dC/dV) are seen at the interface between the regrown layers and the n-doped regions and attributed to band-bending at the interface. The behavior of the SCM signal with ac-bias is used to verify the semi-insulating nature of the regrown layer at different locations of the sample. The measured SCM signal for the regrown GaInP:Fe layer is uniformly zero indicating very low free carrier densities and confirms semi-insulating properties. This observation strongly suggests, in addition, uniform Fe incorporation in the regrown layers, close to and far away from the mesa. Finally, a nanoscale feature in the SCM contrast appearing as a bright spot in dC/dV mode is observed at the mesa sidewall close to the interface between the regrown GaInP:Fe and the p-barrier layer. The origin of this contrast is discussed in terms of local band-bending effects and supported by 2D Poisson simulations of the device structure.
|
|
| 3. |
- Douheret, Olivier, et al.
(författare)
-
Scanning capacitance microscopy investigations of lnGaAs/InP quantum wells
- 2004
-
Ingår i: Thin Solid Films. - : Elsevier BV. - 0040-6090 .- 1879-2731. ; 459:02-jan, s. 67-70
-
Tidskriftsartikel (refereegranskat)abstract
- In this work, cross-sectional scanning capacitance microscopy (SCM) is used to investigate InGaAs/InP (latticed matched) quantum wells grown by metal-organic vapor phase epitaxy. Using n-doped InP as barriers with different doping levels, different InGaAs wells structures (5, 10 and 20 nm) were investigated. The capability of SCM to detect electrons in the quantum wells is demonstrated, showing in addition, a systematic and consistent trend for the different well widths and barrier doping levels. The SCM results are qualitatively consistent with electron distribution obtained for 1D Poisson/Schrodinger simulation. Finally, resolution issues in SCM are discussed in terms of tip averaging effects.
|
|
| 4. |
- Maknys, Kestutis, et al.
(författare)
-
Electrical characterization of InGaAs/InP quantum wells by scanning capacitance microscopy
- 2018
-
Ingår i: Microscopy of Semiconducting Materials 2003. - : CRC Press. ; , s. 645-648
-
Bokkapitel (refereegranskat)abstract
- In this work, cross-sectional scanning capacitance microscopy (SCM) is used to investigate 5, 10, and 20 nm InGaAs/InP (lattice matched) quantum wells grown by metalorganic vapour phase epitaxy and sandwiched between Si-doped InP barriers. It is demonstrated that SCM is capable of detecting the electrons accumulated in the quantum wells and that the SCM signal shows a systematic trend for the wells of different width. It is also shown that at appropriate tip-sample DC biases depletion regions in the barriers adjacent to the wells are clearly resolved.
|
|
