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Sökning: WFRF:(Maletic Nebojsa)

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1.
  • Emmelmann, Marc, et al. (författare)
  • Deliverable 6.2: Trials and experimentation (cycle 2)
  • 2020
  • Rapport (refereegranskat)abstract
    • This deliverable presents the second cycle of trials and experimentation activities executed over 5GENESIS facilities. The document is the continuation of deliverable D6.1, in the sense that it captures tests carried out over the evolved infrastructures hosting 5GENESIS facilities following the methodology defined in D6.1. In this document 8 main KPIs and 4 application specific validation trials achieved, under 123 experiments that performed in total. The tests focus more on i) the evolved 5G infrastructure deployments that includes radio and core elements in non-standalone (NSA) deployment configurations based on commercial and open implementations, and ii) the use of Open 5GENESIS Suite for the execution of the tests.
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2.
  • Franzese, Aniello, et al. (författare)
  • 56% PAE mm-Wave SiGe BiCMOS Power Amplifier Employing Local Backside Etching
  • 2024
  • Ingår i: IEEE Microwave and Wireless Technology Letters. - 2771-9588 .- 2771-957X. ; In Press
  • Tidskriftsartikel (refereegranskat)abstract
    • This letter presents a power amplifier (PA) with excellent power-added efficiency (PAE) for millimeter-wave (mm-wave) applications. The high efficiency is achieved by leveraging a local backside etching (LBE) process to enhance the quality factor ( Q ) of the output matching network. The PA was fabricated in a mature SiGe BiCMOS technology featuring heterojunction bipolar transistors (HBTs) having an fT / fmax of 250/340 GHz. While the measured peak PAE is 56% at 24 and 25 GHz, the PA provides 16 dB of peak gain and a 3-dB bandwidth of 19 GHz ranging from 13.5 to 32.5 GHz, which makes the circuit well suited for multiple purposes, such as sensors, radars, 5G, and satellite communications. The maximum PAE exceeds 40% from 22 to 28 GHz, with a peak saturated power ( Psat ) of 16.5 dBm at 25 GHz. To the best of authors’ knowledge, this PA achieves the highest PAE reported to date for silicon-based mm-wave amplifiers.
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