| 1. |
- Abelev, B., et al.
(författare)
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Technical Design Report for the Upgrade of the ALICE Inner Tracking System
- 2014
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Ingår i: Journal of Physics G: Nuclear and Particle Physics. - : IOP Publishing. - 0954-3899 .- 1361-6471. ; 41:8
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Tidskriftsartikel (refereegranskat)abstract
- LICE (A Large Ion Collider Experiment) is studying the physics of strongly interacting matter, and in particular the properties of the Quark–Gluon Plasma (QGP), using proton–proton, proton–nucleus and nucleus–nucleus collisions at the CERN LHC (Large Hadron Collider). The ALICE Collaboration is preparing a major upgrade of the experimental apparatus, planned for installation in the second long LHC shutdown in the years 2018–2019. A key element of the ALICE upgrade is the construction of a new, ultra-light, high-resolution Inner Tracking System (ITS) based on monolithic CMOS pixel detectors. The primary focus of the ITS upgrade is on improving the performance for detection of heavy-flavour hadrons, and of thermal photons and low-mass di-electrons emitted by the QGP. With respect to the current detector, the new Inner Tracking System will significantly enhance the determination of the distance of closest approach to the primary vertex, the tracking efficiency at low transverse momenta, and the read-out rate capabilities. This will be obtained by seven concentric detector layers based on a 50 μm thick CMOS pixel sensor with a pixel pitch of about 30×30 μm2. This document, submitted to the LHCC (LHC experiments Committee) in September 2013, presents the design goals, a summary of the R&D activities, with focus on the technical implementation of the main detector components, and the projected detector and physics performance.
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| 2. |
- Ni, W.-X., et al.
(författare)
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δ-function-shaped Sb-doping profiles in Si(001) obtained using a low-energy accelerated-ion source during molecular-beam epitaxy
- 1992
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Ingår i: Physical Review B. - 0163-1829. ; 46:12, s. 7551-7558
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Tidskriftsartikel (refereegranskat)abstract
- Two-dimensional (2D) buried delta-function-shaped Sb-doping profiles have been obtained in Si using a low-energy accelerated Sb-ion source during molecular-beam epitaxy. A combination of secondary-ion mass spectrometry (SIMS), capacitance-voltage (C-V) measurements, and cross-sectional transmission electron microscopy (XTEM) was used to investigate dopant distributions and to determine profile widths. The 2D-sheet Sb-doping concentration N(Sb), obtained by integrating SIMS delta-doping profiles in samples grown with substrate temperature T(s) = 620-degrees-C and Sb-ion acceleration potentials V(Sb) = 200 and 300 V, was found to vary linearly with the product of the Sb-ion flux and the exposure time (i.e., the ion dose) over the N(Sb) range from 5 X 10(12) to 2 X 10(14) cm-2. The full width at half maximum (FWHM) concentration of 8-doping profiles in Si(001) films was less than the depth resolution of both SIMS and C-V measurements (approximately 10 and 3 nm, respectively). High-resolution XTEM lattice images show that the FWHM was less-than-or-equal-to 2 nm. This is consistent with dopant incorporation simulations, based upon a multisite transition-state dopant incorporation model, which show that accelerated-beam dopant species are trapped in near-surface substitutional sites with atomic mobilities between those of surface and bulk atoms. Dopant surface segregation during growth is strongly suppressed, and the dopant distribution is determined primarily by the straggle in ion trapping distributions. The present results are compared with profile broadening observed in 8-doped layers obtained by solid-phase epitaxy of amorphous Si containing a buried Sb layer.
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