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Sökning: WFRF:(Martinez Criado G.)

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2.
  • Johannes, A., et al. (författare)
  • Enhanced sputtering and incorporation of Mn in implanted GaAs and ZnO nanowires
  • 2014
  • Ingår i: Journal of Physics D: Applied Physics. - Bristol : IOP Publishing. - 1361-6463 .- 0022-3727. ; 47:39
  • Tidskriftsartikel (refereegranskat)abstract
    • We simulated and experimentally investigated the sputter yield of ZnO and GaAs nanowires, which were implanted with energetic Mn ions at room temperature. The resulting thinning of the nanowires and the dopant concentration with increasing Mn ion fluency were measured by accurate scanning electron microscopy (SEM) and nano-x-Ray Fluorescence (nanoXRF) quantification, respectively. We observed a clearly enhanced sputter yield for the irradiated nanowires compared to bulk, which is also corroborated by iradina simulations. These show a maximum if the ion range matches the nanowire diameter. As a consequence of the erosion thinning of the nanowire, the incorporation of the Mn dopants is also enhanced and increases non-linearly with increasing ion fluency.
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3.
  • Oppo, C. I., et al. (författare)
  • Polarity dependent strongly inhomogeneous In-incorporation in GaN nanocolumns
  • 2016
  • Ingår i: Nanotechnology. - : IOP Publishing. - 0957-4484 .- 1361-6528. ; 27:35
  • Tidskriftsartikel (refereegranskat)abstract
    • In this work, GaN/InGaN/GaN nanocolumns (NCs) have been grown by molecular beam epitaxy. Selective area growth (SAG) and self-organized growth (SOG) were performed simultaneously in patterned and unpatterned regions of the same substrate, respectively. The resulting structures show different tip morphologies and structural properties due to the different polarity along the growth direction, namely Ga-polar with r-plane faceted tips for the SAG NCs and N-polar with c-plane top facet for the SOG ones. When growing Ga-polar GaN/InGaN NCs, no indium is incorporated at a substrate temperature of °C. Rather, indium incorporation takes place under the same growth conditions on the N-polar NCs. The In-incorporation is investigated by means of nano x-ray fluorescence and diffraction, high-angle annular dark-field scanning transmission electron microscopy and high-resolution transmission electron microscopy.
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4.
  • Sans, J A, et al. (författare)
  • Thermal instability of implanted Mn ions in ZnO
  • 2010
  • Ingår i: JOURNAL OF APPLIED PHYSICS. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 107:2, s. 023507-
  • Tidskriftsartikel (refereegranskat)abstract
    • This letter reports on the site configuration of implanted Mn cations in ZnO. The samples studied were obtained by means of ion implantation in m-plane ZnO single crystals. Synchrotron radiation based fluorescence shows no contamination during the implantation process. The results of micro-x-ray absorption spectroscopy indicate that Mn ions are located in substitutional sites without detectable traces of secondary phases. The postgrowth thermal annealing in O-2 atmosphere induces a change in the coordination of a large amount of Mn cations, corresponding to alpha-Mn2O3.
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  • Resultat 1-4 av 4

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