| 1. |
- Gallego-Sala, Angela V., et al.
(författare)
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Latitudinal limits to the predicted increase of the peatland carbon sink with warming
- 2018
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Ingår i: Nature Climate Change. - : Springer Science and Business Media LLC. - 1758-678X .- 1758-6798. ; 8:10, s. 907-
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Tidskriftsartikel (refereegranskat)abstract
- The carbon sink potential of peatlands depends on the balance of carbon uptake by plants and microbial decomposition. The rates of both these processes will increase with warming but it remains unclear which will dominate the global peatland response. Here we examine the global relationship between peatland carbon accumulation rates during the last millennium and planetary-scale climate space. A positive relationship is found between carbon accumulation and cumulative photosynthetically active radiation during the growing season for mid- to high-latitude peatlands in both hemispheres. However, this relationship reverses at lower latitudes, suggesting that carbon accumulation is lower under the warmest climate regimes. Projections under Representative Concentration Pathway (RCP)2.6 and RCP8.5 scenarios indicate that the present-day global sink will increase slightly until around AD 2100 but decline thereafter. Peatlands will remain a carbon sink in the future, but their response to warming switches from a negative to a positive climate feedback (decreased carbon sink with warming) at the end of the twenty-first century.
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| 2. |
- Mathijssen, Simon G. J., et al.
(författare)
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Manipulating the local light emission in organic light-emitting diodes by using patterned self-assembled monolayers
- 2008
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Ingår i: Advanced Materials. - : Wiley-VCH Verlag. - 0935-9648 .- 1521-4095. ; 20:14, s. 2703-
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Tidskriftsartikel (refereegranskat)abstract
- Patterned organic light-emitting diodes are fabricated by using microcontactDrinted self-assembled monolayers on a gold anode (see background figure). Molecules with dipole moments in opposite directions result in an increase or a decrease of the local work function (foreground picture), providing a direct handle on charge injection and enabling local modification of the light emission
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| 3. |
- Mathijssen, Simon G. J., et al.
(författare)
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Monolayer coverage and channel length set the mobility in self-assembled monolayer field-effect transistors
- 2009
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Ingår i: Nature Nanotechnology. - : Nature Publishing Group. - 1748-3387 .- 1748-3395. ; 4:10, s. 674-680
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Tidskriftsartikel (refereegranskat)abstract
- The mobility of self-assembled monolayer field-effect transistors (SAMFETs) traditionally decreases dramatically with increasing channel length. Recently, however, SAMFETs using liquid-crystalline molecules have been shown to have bulk-like mobilities that are virtually independent of channel length. Here, we reconcile these scaling relations by showing that the mobility in liquid crystalline SAMFETs depends exponentially on the channel length only when the monalayer is incomplete. We explain this dependence both numerically and analytically, and show that charge transport is not affected by carrier injection, grain boundaries or conducting island size. At partial coverage, that is when the monolayer is incomplete, liquid-crystalline SAMFETs thus form a unique model system to study size-dependent conductance originating from charge percolation in two dimensions.
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| 4. |
- Christian Roelofs, W. S., et al.
(författare)
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Fundamental Limitations for Electroluminescence in Organic Dual-Gate Field-Effect Transistors
- 2014
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Ingår i: Advanced Materials. - : Wiley-VCH Verlag. - 0935-9648 .- 1521-4095. ; 26:26, s. 4450-
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Tidskriftsartikel (refereegranskat)abstract
- A dual-gate organic field-effect transistor is investigated for electrically pumped lasing. The two gates can independently accumulate electrons and holes, yielding current densities exceeding the lasing threshold. Here, the aim is to force the electrons and holes to recombine by confining the charges in a single semiconducting film. It is found that independent hole and electron accumulation is mutually exclusive with vertical recombination and light emission.
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| 5. |
- Mathijssen, Simon G. J., et al.
(författare)
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Charge trapping at the dielectric of organic transistors visualized in real time and space
- 2008
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Ingår i: Advanced Materials. - : Wiley-VCH Verlag. - 0935-9648 .- 1521-4095. ; 20:5, s. 975-
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Tidskriftsartikel (refereegranskat)abstract
- Scanning Kelvin probe microscopy demonstrates that water-induced charge trapping at the SiO2 dielectric visualized in real time and space - is responsible for the commonly observed gate-bias-induced threshold-voltage shift in organic field-effect transistors. When a bias is applied to the electrodes, charges are injected onto the SiO2 (see background of the figure). When the contacts are grounded, the charges are released again (foreground picture).
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| 6. |
- Mathijssen, Simon G. J., et al.
(författare)
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Revealing Buried Interfaces to Understand the Origins of Threshold Voltage Shifts in Organic Field-Effect Transistors
- 2010
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Ingår i: Advanced Materials. - : Wiley-VCH Verlag. - 0935-9648 .- 1521-4095. ; 22:45, s. 5105-
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Tidskriftsartikel (refereegranskat)abstract
- The semiconductor of an organic field-effect transistor is stripped with adhesive tape, yielding an exposed gate dielectric, accessible for various characterization techniques. By using scanning Kelvin probe microscopy we reveal that trapped charges after gate bias stress are located at the gate dielectric and not in the semiconductor. Charging of the gate dielectric is confirmed by the fact that the threshold voltage shift remains, when a pristine organic semiconductor is deposited on the exposed gate dielectric of a stressed and delaminated field-effect transistor.
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| 7. |
- Smits, Edsger C. P., et al.
(författare)
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Bottom-up organic integrated circuits
- 2008
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Ingår i: Nature. - : Nature Publishing Group. - 0028-0836 .- 1476-4687. ; 455:7215, s. 956-959
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Tidskriftsartikel (refereegranskat)abstract
- Self- assembly - the autonomous organization of components into patterns and structures(1) - is a promising technology for the mass production of organic electronics. Making integrated circuits using a bottom- up approach involving self- assembling molecules was proposed(2) in the 1970s. The basic building block of such an integrated circuit is the self- assembled- monolayer field- effect transistor ( SAMFET), where the semiconductor is a monolayer spontaneously formed on the gate dielectric. In the SAMFETs fabricated so far, current modulation has only been observed in submicrometre channels(3-5), the lack of efficient charge transport in longer channels being due to defects and the limited intermolecular pi-pi coupling between the molecules in the self-assembled monolayers. Low field- effect carrier mobility, low yield and poor reproducibility have prohibited the realization of bottom- up integrated circuits. Here we demonstrate SAMFETs with long- range intermolecular pi - pi coupling in the monolayer. We achieve dense packing by using liquid- crystalline molecules consisting of a pi- conjugated mesogenic core separated by a long aliphatic chain from a monofunctionalized anchor group. The resulting SAMFETs exhibit a bulk- like carrier mobility, large current modulation and high reproducibility. As a first step towards functional circuits, we combine the SAMFETs into logic gates as inverters; the small parameter spread then allows us to combine the inverters into ring oscillators. We demonstrate real logic functionality by constructing a 15- bit code generator in which hundreds of SAMFETs are addressed simultaneously. Bridging the gap between discrete monolayer transistors and functional self-assembled integrated circuits puts bottom- up electronics in a new perspective.
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| 8. |
- Bobbert, Peter A., et al.
(författare)
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Operational Stability of Organic Field-Effect Transistors
- 2012
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Ingår i: Advanced Materials. - : Wiley-VCH Verlag. - 0935-9648 .- 1521-4095. ; 24:9, s. 1146-1158
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Tidskriftsartikel (refereegranskat)abstract
- Organic field-effect transistors (OFETs) are considered in technological applications for which low cost or mechanical flexibility are crucial factors. The environmental stability of the organic semiconductors used in OFETs has improved to a level that is now sufficient for commercialization. However, serious problems remain with the stability of OFETs under operation. The causes for this have remained elusive for many years. Surface potentiometry together with theoretical modeling provide new insights into the mechanisms limiting the operational stability. These indicate that redox reactions involving water are involved in an exchange of mobile charges in the semiconductor with protons in the gate dielectric. This mechanism elucidates the established key role of water and leads in a natural way to a universal stress function, describing the stretched exponential-like time dependence ubiquitously observed. Further study is needed to determine the generality of the mechanism and the role of other mechanisms.
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| 9. |
- Sharma, A., et al.
(författare)
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Bias-stress effect and recovery in organic field effect transistors: Proton migration mechanism
- 2010
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Ingår i: ORGANIC FIELD-EFFECT TRANSISTORS IX. - : Society of Photo-optical Instrumentation Engineers (SPIE). - 9780819482747
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Konferensbidrag (refereegranskat)abstract
- Organic field-effect transistors exhibit operational instabilities when a gate bias is applied. For a constant gate bias the threshold voltage shifts towards the applied gate bias voltage, an effect known as the bias-stress effect. We have performed a detailed experimental and theoretical study of operational instabilities in p-type transistors with silicon-dioxide gate dielectric. We propose a mechanism in which holes in the semiconductor are converted into protons in the presence of water and a reversible migration of these protons into the gate dielectric to explain the instabilities in organic transistors. We show how redistribution of charge between holes in the semiconductor and protons in the gate dielectric can consistently explain the experimental observations. Furthermore, we explain in detail the recovery of a pres-stressed transistor on applying zero gate bias. We show that recovery dynamics depends strongly on the extent of stressing. Our mechanism is consistent with the known aspects of bias-stress effect like acceleration due to humidity, constant activation energy and reversibility.
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