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Sökning: WFRF:(Mauze Akhil)

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1.
  • Hilfiker, Matthew, et al. (författare)
  • Dielectric function tensor (1.5 eV to 9.0 eV), anisotropy, and band to band transitions of monoclinic -(AlxGa1-x)(2)O-3 (x 0.21) films
  • 2019
  • Ingår i: Applied Physics Letters. - : AMER INST PHYSICS. - 0003-6951 .- 1077-3118. ; 114:23
  • Tidskriftsartikel (refereegranskat)abstract
    • A set of monoclinic -(AlxGa1-x)(2)O-3 films coherently grown by plasma-assisted molecular beam epitaxy onto (010)-oriented -Ga2O3 substrates for compositions x0.21 is investigated by generalized spectroscopic ellipsometry at room temperature in the spectral range of 1.5eV-9.0eV. We present the composition dependence of the excitonic and band to band transition energy parameters using a previously described eigendielectric summation approach for -Ga2O3 from the study by Mock et al. All energies shift to a shorter wavelength with the increasing Al content in accordance with the much larger fundamental band to band transition energies of Al2O3 regardless of crystal symmetry. The observed increase in the lowest band to band transition energy is in excellent agreement with recent theoretical predictions. The most important observation is that charge confinement in heterostructures will strongly depend on the growth condition due to the strongly anisotropic properties of the band to band transitions.
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2.
  • Korlacki, Rafal, et al. (författare)
  • Strain and Composition Dependencies of the Near-Band-Gap Optical Transitions in Monoclinic (AlxGa1-x)2O3 Alloys with Coherent Biaxial In-Plane Strain on Ga2O3(010)
  • 2022
  • Ingår i: Physical Review Applied. - : AMER PHYSICAL SOC. - 2331-7019. ; 22:6
  • Tidskriftsartikel (refereegranskat)abstract
    • The bowing of the energy of the three lowest band-to-band transitions in beta-(AlXGa1-X)2O3 alloys is resolved using a combined density-functional theory (DFT) and generalized spectroscopic ellipsometry approach. The DFT calculations of the electronic band structure of both beta-Ga2O3 and theta-Al2O3 allow the linear portion of the energy shift in the alloys to be extracted, and provide a method for quantifying the role of coherent strain present in the beta-(AlXGa1-X)2O3 thin films on (010) beta-Ga2O3 substrates. The energies of band-to-band transitions are obtained using the spectroscopic ellipsometry eigenpolarization model approach [A. Mock et al., Phys. Rev. B 95, 165202 (2017)]. After subtracting the effects of strain, which also induces additional bowing and after subtraction of the linear portion of the energy shift due to alloying, the bowing parameters associated with the three lowest band-to-band transitions in monoclinic beta-(AlXGa1-X)2O3 are found.
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