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- Miranda la Hera, Vladimir, et al.
(författare)
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Electronic properties of hexagonal v-shaped gallium nitride pits
- 2023
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Ingår i: The Journal of Physical Chemistry C. - : American Chemical Society (ACS). - 1932-7447 .- 1932-7455. ; 127:51, s. 24658-24665
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Tidskriftsartikel (refereegranskat)abstract
- In this work, the morphology, surface composition, and electronic properties of porous GaN films containing hexagonal V-shaped pits were studied. The V-pits are orientated along the [0001] direction of GaN, and we observed a clear relation between the growth time with the surface composition, film thickness, and pit morphology, which in turn had a significant impact on the band gap, valence band maximum, and the work function. The effect on the position of the valence band maximum and work function is explained by the formation of superficial oxygen-rich phases such as Ga2O3 and nonstoichiometric GaNxOy as supported by X-ray photoelectron spectroscopy and density functional theory (DFT). We further show a change in the optical band gap with the thickness of the porous films explained by a change in the tensile strain caused by open-core screw dislocations that gives rise to the formation of V-pits. The correlation between strain and the band gap is supported by DFT calculations. Our study provides insights into the intricate relation between surface states and electronic properties of semiconducting materials and offers directions for designing GaN heterojunctions with specific optical and electronic properties.
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| 3. |
- Wu, Jingnan, 1994, et al.
(författare)
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On the Conformation of Dimeric Acceptors and Their Polymer Solar Cells with Efficiency over 18 %
- 2023
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Ingår i: Angewandte Chemie International Edition. - : John Wiley & Sons. - 1433-7851 .- 1521-3773. ; 62:45
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Tidskriftsartikel (refereegranskat)abstract
- The determination of molecular conformations of oligomeric acceptors (OAs) and their impact on molecular packing are crucial for understanding the photovoltaic performance of their resulting polymer solar cells (PSCs) but have not been well studied yet. Herein, we synthesized two dimeric acceptor materials, DIBP3F-Se and DIBP3F-S, which bridged two segments of Y6-derivatives by selenophene and thiophene, respectively. Theoretical simulation and experimental 1D and 2D NMR spectroscopic studies prove that both dimers exhibit O-shaped conformations other than S- or U-shaped counter-ones. Notably, this O-shaped conformation is likely governed by a distinctive "conformational lock" mechanism, arising from the intensified intramolecular & pi;-& pi; interactions among their two terminal groups within the dimers. PSCs based on DIBP3F-Se deliver a maximum efficiency of 18.09 %, outperforming DIBP3F-S-based cells (16.11 %) and ranking among the highest efficiencies for OA-based PSCs. This work demonstrates a facile method to obtain OA conformations and highlights the potential of dimeric acceptors for high-performance PSCs.
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