| 1. |
- Glasbey, JC, et al.
(författare)
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- 2021
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swepub:Mat__t
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| 2. |
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| 3. |
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| 4. |
- Aamodt, K., et al.
(författare)
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The ALICE experiment at the CERN LHC
- 2008
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Ingår i: Journal of Instrumentation. - 1748-0221. ; 3:S08002
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Forskningsöversikt (refereegranskat)abstract
- ALICE (A Large Ion Collider Experiment) is a general-purpose, heavy-ion detector at the CERN LHC which focuses on QCD, the strong-interaction sector of the Standard Model. It is designed to address the physics of strongly interacting matter and the quark-gluon plasma at extreme values of energy density and temperature in nucleus-nucleus collisions. Besides running with Pb ions, the physics programme includes collisions with lighter ions, lower energy running and dedicated proton-nucleus runs. ALICE will also take data with proton beams at the top LHC energy to collect reference data for the heavy-ion programme and to address several QCD topics for which ALICE is complementary to the other LHC detectors. The ALICE detector has been built by a collaboration including currently over 1000 physicists and engineers from 105 Institutes in 30 countries, Its overall dimensions are 16 x 16 x 26 m(3) with a total weight of approximately 10 000 t. The experiment consists of 18 different detector systems each with its own specific technology choice and design constraints, driven both by the physics requirements and the experimental conditions expected at LHC. The most stringent design constraint is to cope with the extreme particle multiplicity anticipated in central Pb-Pb collisions. The different subsystems were optimized to provide high-momentum resolution as well as excellent Particle Identification (PID) over a broad range in momentum, up to the highest multiplicities predicted for LHC. This will allow for comprehensive studies of hadrons, electrons, muons, and photons produced in the collision of heavy nuclei. Most detector systems are scheduled to be installed and ready for data taking by mid-2008 when the LHC is scheduled to start operation, with the exception of parts of the Photon Spectrometer (PHOS), Transition Radiation Detector (TRD) and Electro Magnetic Calorimeter (EMCal). These detectors will be completed for the high-luminosity ion run expected in 2010. This paper describes in detail the detector components as installed for the first data taking in the summer of 2008.
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| 5. |
- Fenstermacher, M.E., et al.
(författare)
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DIII-D research advancing the physics basis for optimizing the tokamak approach to fusion energy
- 2022
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Ingår i: Nuclear Fusion. - : IOP Publishing. - 0029-5515 .- 1741-4326. ; 62:4
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Tidskriftsartikel (refereegranskat)abstract
- DIII-D physics research addresses critical challenges for the operation of ITER and the next generation of fusion energy devices. This is done through a focus on innovations to provide solutions for high performance long pulse operation, coupled with fundamental plasma physics understanding and model validation, to drive scenario development by integrating high performance core and boundary plasmas. Substantial increases in off-axis current drive efficiency from an innovative top launch system for EC power, and in pressure broadening for Alfven eigenmode control from a co-/counter-I p steerable off-axis neutral beam, all improve the prospects for optimization of future long pulse/steady state high performance tokamak operation. Fundamental studies into the modes that drive the evolution of the pedestal pressure profile and electron vs ion heat flux validate predictive models of pedestal recovery after ELMs. Understanding the physics mechanisms of ELM control and density pumpout by 3D magnetic perturbation fields leads to confident predictions for ITER and future devices. Validated modeling of high-Z shattered pellet injection for disruption mitigation, runaway electron dissipation, and techniques for disruption prediction and avoidance including machine learning, give confidence in handling disruptivity for future devices. For the non-nuclear phase of ITER, two actuators are identified to lower the L-H threshold power in hydrogen plasmas. With this physics understanding and suite of capabilities, a high poloidal beta optimized-core scenario with an internal transport barrier that projects nearly to Q = 10 in ITER at ∼8 MA was coupled to a detached divertor, and a near super H-mode optimized-pedestal scenario with co-I p beam injection was coupled to a radiative divertor. The hybrid core scenario was achieved directly, without the need for anomalous current diffusion, using off-axis current drive actuators. Also, a controller to assess proximity to stability limits and regulate β N in the ITER baseline scenario, based on plasma response to probing 3D fields, was demonstrated. Finally, innovative tokamak operation using a negative triangularity shape showed many attractive features for future pilot plant operation.
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| 6. |
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| 7. |
- Buffolo, M., et al.
(författare)
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Modeling of the Optical and Electrical Degradation of 845 nm VCSILs
- 2023
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Ingår i: 2023 Conference on Lasers and Electro-Optics, CLEO 2023.
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Konferensbidrag (refereegranskat)abstract
- Optical and electrical degradation of novel micro-transfer-printed VCSILs is investigated. Modeling of experimental data suggests that the main degradation mechanism is represented by the relocation of impurities, originating from the p-side, toward the active region.
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| 8. |
- You, S., et al.
(författare)
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Vertical GaN devices : Process and reliability
- 2021
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Ingår i: Microelectronics and reliability. - : Elsevier Ltd. - 0026-2714 .- 1872-941X. ; 126
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Tidskriftsartikel (refereegranskat)abstract
- This paper reviews recent progress and key challenges in process and reliability for high-performance vertical GaN transistors and diodes, focusing on the 200 mm CMOS-compatible technology. We particularly demonstrated the potential of using 200 mm diameter CTE matched substrates for vertical power transistors, and gate module optimizations for device robustness. An alternative technology path based on coalescence epitaxy of GaN-on-Silicon is also introduced, which could enable thick drift layers of very low dislocation density. © 2021
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| 9. |
- Zenari, M., et al.
(författare)
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Analysis of defect-related optical degradation of VCSILs for photonic integrated circuits
- 2023
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Ingår i: Proceedings of SPIE - The International Society for Optical Engineering. - : SPIE. - 0277-786X .- 1996-756X. ; 12439
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Konferensbidrag (refereegranskat)abstract
- Laser diodes are of paramount importance for on-chip telecommunications applications, and a wide range of sensing devices that require near-infrared sources. In this work, the devices under test are vertical-cavity silicon-integrated lasers (VCSILs) designed for operation at 845 nm in photonic integrated circuits (PICs). We focus on the analysis of the degradation of the optical performance during aging. To investigate the reliability of the devices, we carried out several stress tests at constant current, ranging from 3.5 mA to 4.5 mA representing a highly accelerated stress condition. We observed two different degradation modes. In the first part of the experiments, the samples exhibited a worsening of the threshold current, but the sub-threshold emission was unaffected by degradation. We associated this behavior to the diffusion of impurities that, from the p-contact, were crossing the upper mirror implying a worsening of the DBR optical absorption. In the second stage of the stress test, the devices showed a higher degradation rate of the threshold current, whose variation was found to be linearly correlated to the worsening of the sub-threshold emission. We related this second degradation mode to the migration of the same impurities degrading the top DBR that, when reaching the active region of the laser, induced an increase in the non-radiative recombination rate. In addition to that, we related the two degradation modes to the change in series resistance, which was ascribed to the resistivity increment of the top DBR first and of oxide aperture afterwards.
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| 10. |
- Zenari, M., et al.
(författare)
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Understanding the optical degradation of 845nm micro-transfer-printed VCSILs for photonic integrated circuits
- 2023
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Ingår i: IEEE Journal of Quantum Electronics. - 0018-9197 .- 1558-1713. ; 59:4
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Tidskriftsartikel (refereegranskat)abstract
- For the first time we investigate the optical degradation of vertical-cavity silicon-integrated lasers (VCSILs) designed for operation at 845 nm in photonic integrated circuits (PICs). The study is based on the combined electro-optical characterization of VCSIL, submitted to constant-current stress tests at different current levels. The original results obtained within the manuscript indicate that degradation is related to the diffusion of impurities. Remarkably, depending on the region through which these impurities are migrating, the diffusion process affects device characteristics in different ways. During Phase 1 (Ph1), compensating impurities originating from the metal-semiconductor contact cross the top DBR, thus degrading mirror reflectivity, which is rarely observed in the literature, and leading to an increase in the threshold current of the device. As the impurities start reaching the active region we observe the onset of Phase 2 (Ph2), during which both threshold current and sub-threshold slope worsen, due to the increase of the Shockley-Read-Hall recombination rate. This phase is also characterized by a measurable increase in series resistance, which is ascribed to a change in the resistance of the oxide aperture. The identification of the root cause of physical degradation represents a fundamental step for future lifetime improvement of these novel optical sources, which are set to replace conventional solid-state sources in the 0.85 μm communication window.
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