| 1. |
- Riley, J. M., et al.
(författare)
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Direct observation of spin-polarized bulk bands in an inversion-symmetric semiconductor
- 2014
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Ingår i: Nature Physics. - 1745-2473. ; 10:11, s. 835-839
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Tidskriftsartikel (refereegranskat)abstract
- Methods to generate spin-polarized electronic states in nonmagnetic solids are strongly desired to enable all-electrical manipulation of electron spins for new quantum devices(1). This is generally accepted to require breaking global structural inversion symmetry(1-5). In contrast, here we report the observation from spin- and angle-resolved photoemission spectroscopy of spin-polarized bulk states in the centrosymmetric transition-metal dichalcogenide WSe2. Mediated by a lack of inversion symmetry in constituent structural units of the bulk crystal where the electronic states are localized(6), we show how spin splittings up to similar to 0.5 eV result, with a spin texture that is strongly modulated in both real and momentum space. Through this, our study provides direct experimental evidence for a putative locking of the spin with the layer and valley pseudospins in transition-metal dichalcogenides(7,8), of key importance for using these compounds in proposed valleytronic devices.
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| 2. |
- Nigge, P., et al.
(författare)
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Room temperature strain-induced Landau levels in graphene on a wafer-scale platform
- 2019
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Ingår i: Science Advances. - : AMER ASSOC ADVANCEMENT SCIENCE. - 2375-2548. ; 5:11
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Tidskriftsartikel (refereegranskat)abstract
- Graphene is a powerful playground for studying a plethora of quantum phenomena. One of the remarkable properties of graphene arises when it is strained in particular geometries and the electrons behave as if they were under the influence of a magnetic field. Previously, these strain-induced pseudomagnetic fields have been explored on the nano- and micrometer-scale using scanning probe and transport measurements. Heteroepitaxial strain, in contrast, is a wafer-scale engineering method. Here, we show that pseudomagnetic fields can be generated in graphene through wafer-scale epitaxial growth. Shallow triangular nanoprisms in the SiC substrate generate strain-induced uniform fields of 41 T, enabling the observation of strain-induced Landau levels at room temperature, as detected by angle-resolved photoemission spectroscopy, and confirmed by model calculations and scanning tunneling microscopy measurements. Our work demonstrates the feasibility of exploiting strain-induced quantum phases in two-dimensional Dirac materials on a wafer-scale platform, opening the field to new applications.
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