| 1. |
- Pozina, Galia, et al.
(författare)
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Emission Properties of GaN Planar Hexagonal Microcavities
- 2020
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Ingår i: Physica Status Solidi (a) applications and materials science. - : WILEY-V C H VERLAG GMBH. - 1862-6300 .- 1862-6319. ; 217:14
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Tidskriftsartikel (refereegranskat)abstract
- Fabrication of microcavities based on III-nitrides is challenging due to difficulties with the coherent growth of heterostructures having a large number of periods, at the same time keeping a good precision in terms of thickness and composition of the alloy. A planar design for GaN microresonators supporting whispering gallery modes is suggested. GaN hexagonal microstructures are fabricated by selective-area metalorganic vapor phase epitaxy using focused ion beam for mask patterning. Low-temperature cathodoluminescence spectra measured with a high spatial resolution demonstrate two dominant emission lines in the near bandgap region. These lines merge at room temperature into a broad emission band peaking at approximate to 3.3 eV, which is shifted toward lower energies compared with the reference excitonic spectrum measured for the GaN layer. A numerical analysis of exciton-polariton modes shows that some strongly localized cavity modes can have high Purcell coefficients and can strongly interact with the GaN exciton.
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| 2. |
- Pozina, Galia, et al.
(författare)
-
Approach to high quality GaN lateral nanowires and planar cavities fabricated by focused ion beam and metal-organic vapor phase epitaxy
- 2018
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Ingår i: Scientific Reports. - : NATURE PUBLISHING GROUP. - 2045-2322. ; 8
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Tidskriftsartikel (refereegranskat)abstract
- We have developed a method to fabricate GaN planar nanowires and cavities by combination of Focused Ion Beam (FIB) patterning of the substrate followed by Metal Organic Vapor Phase Epitaxy (MOVPE). The method includes depositing a silicon nitride mask on a sapphire substrate, etching of the trenches in the mask by FIB with a diameter of 40 nm with subsequent MOVPE growth of GaN within trenches. It was observed that the growth rate of GaN is substantially increased due to enhanced bulk diffusion of the growth precursor therefore the model for analysis of the growth rate was developed. The GaN strips fabricated by this method demonstrate effective luminescence properties. The structures demonstrate enhancement of spontaneous emission via formation of Fabry-Perot modes.
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| 3. |
- Pozina, Galia, et al.
(författare)
-
Optical Cavity Based on GaN Planar Nanowires Grown by Selective Area Metal-Organic Vapor Phase Epitaxy
- 2019
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Ingår i: Physica status solidi. B, Basic research. - : WILEY-V C H VERLAG GMBH. - 0370-1972 .- 1521-3951. ; 256:6
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Tidskriftsartikel (refereegranskat)abstract
- GaN planar nanowires (NWs) are fabricated by selective area metal-organic vapor phase epitaxy using focused ion beam etching of trench pattern in the Si3N4 mask. Two crystallographic orientations of NWs along [1120] and [1010] directions are investigated. The coherent growth is confirmed for both directions; however, the best morphology, crystalline and optical properties are found in the GaN planar NWs fabricated along the [1010] axis. Cathodoluminescence (CL) at 5K reveals a presence of Fabry-Perot modes in the region of 1.8-2.5 eV for the NWs fabricated in the [1010] direction. The position and intensity of the Fabry-Perot peaks vary depending on measured point within the NW, which is explained by the model based on the Purcell coefficient calculations. It is shown that small fluctuations in the NW thickness cause a noticeable shift of the Fabry-Perot modes energies, while the enhancement or reduction of the emission intensity for the Fabry-Perot peaks depend on the position of the emitter inside the planar NW.
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