| 1. |
- Asplund, Carl, et al.
(författare)
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1260 nm InGaAs vertical-cavity lasers
- 2002
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Ingår i: Electronics Letters. - : Institution of Engineering and Technology (IET). - 0013-5194 .- 1350-911X. ; 38:13, s. 635-636
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Tidskriftsartikel (refereegranskat)abstract
- The fabrication and performance of highly strained double-quantum well InGaAs/GaAs vertical-cavity lasers with record-long emission wavelength of 1260 nm at room temperature is reported. Depending on device diameter, the minimum threshold current is in the low mA-regime while the maximum output power exceeds 1 mW. The devices work continuous-wave over a wide temperature range of at least 10-120degrees C.
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| 2. |
- Chacinski, Marek, et al.
(författare)
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Single-mode 1.27 μm InGaAs vertical cavity surface-emitting lasers with temperature-tolerant modulation characteristics
- 2005
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 86:21, s. 211109-1-211109-3
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Tidskriftsartikel (refereegranskat)abstract
- The dynamic performance of InGaAs/GaAs 1.27 μ m single-mode vertical cavity surface emitting lasers (VCSELs) is presented. In order to reach such a long wavelength, the devices utilize highly strained double-quantum wells and a large detuning between the material gain peak and cavity resonance. It is found that the large detuning improves the temperature stability of both static and modulation characteristics. A resonance frequency of 7.8-9.5 GHz and optical power of 0.30 mW in fiber was maintained throughout the investigated temperature range of 20-90 ° C. The intrinsic response of the device suggests that long-wavelength InGaAs/GaAs VCSELs have the potential to be used as low cost uncooled optical transmitters at 10 Gbit/s. © 2005 American Institute of Physics. © 2005 American Institute of Physics.
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| 3. |
- Mogg, Sebastian, et al.
(författare)
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High-performance 1.2- mu;m highly strained InGaAs/GaAs quantum well lasers
- 2002
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Ingår i: Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th. ; , s. 107-110
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Konferensbidrag (refereegranskat)abstract
- The growth and characterisation of high-performance 1.2- mu;m highly strained InGaAs/GaAs single quantum well (SQW) laser diodes is reported. High output power in excess of 200 mW per facet was obtained from ridge-waveguide (RWG) lasers at an emission wavelength of 1230 nm. These lasers operate CW to at least 145 deg;C and show a high characteristic temperature of 150 K. The net modal gain was measured using the method described by Hakki and Paoli (1975).
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| 4. |
- Mogg, Sebastian, 1971-
(författare)
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Long-Wavelength Vertical-Cavity Lasers : Materials and Device Analysis
- 2003
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Doktorsavhandling (övrigt vetenskapligt/konstnärligt)abstract
- Vertical-cavity lasers (VCLs) are of great interest as lightsources for fiber-optic communication systems. Such deviceshave a number of advantages over traditional in-plane laserdiodes, including low power consumption, efficient fibercoupling, on-chip testability, as well as potential low-costfabrication and packaging. To date, GaAs-based VCLs operatingat 850 nm are the technology of choice for short-distance,high-speed data transmission over multimode fiber. Forlong-distance communication networks, long-wavelength (LW) VCLsoperating in the 1.3 and 1.55-μm transmission windowsof standard singlemode fibers are desired. However, despiteconsiderable worldwide development efforts, the commercialbreakthrough of such devices has still to be achieved. This ismainly due to shortcomings of the intrinsic material propertiesof InP-based material systems, traditionally employed in LWlaser diodes. While LW quantum well (QW) active regions basedon InP are well established, efficient distributed Braggreflectors (DBRs) are better built up in the AlGaAs/GaAsmaterial system. Therefore, earlier work on LW VCLs has focusedon hybrid techniques such as bonding between InP-based QWs andAlGaAs/GaAs DBRs using waferfusion. More recently, however, themain interest in this field has shifted towards all-epitaxialGaAs-based devices employing novel 1.3-μm activematerials with strained GaInNAs QWs as one of the mostpromising candidates.The main focus of this thesis is on the characterization andanalysis of LW VCLs and building blocks thereof, based on bothInP and GaAs substrates. This includes a theoretical study on1.3-μm InGaAsP/InP multiple QW active regions, as wellas an experimental investigation of novel, highly strained1.2-μm InGaAs/GaAs single QWs. Two high-accuracyabsolute reflectance measurement setups were built for thecharacterization of various DBRs. Reflectance measurementsrevealed that n-type doping is much more detrimental to theperformance of AlGaAs/GaAs DBRs than previously anticipated.Near-room temperature operation of a single-fused1.55-μm VCL with an InP/InGaAsP bottom DBR wasobtained. A thermal analysis of this device structure clearlyindicated its limited capabilities in terms of high-temperatureoperation. As a result, further efforts were directed towardsall-epitaxial GaAs-based VCLs. Record-long emission wavelengthsto above 1260 nm were obtained from InGaAs VCLs based on anextensive gain–cavity detuning. These devices showed verypromising performance characteristics in terms of thresholdcurrent and light output power, indicating good potential forbeing a viable alternative to GaInNAs-based VCLs.
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| 5. |
- Mogg, Sebastian, et al.
(författare)
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Temperature sensitivity of the threshold current of long-wavelength InGaAs/GaAs VCSELs with large gain-cavity detuning
- 2004
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Ingår i: IEEE Journal of Quantum Electronics. - 0018-9197 .- 1558-1713. ; 40:5, s. 453-462
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Tidskriftsartikel (refereegranskat)abstract
- Record-long emission wavelengths up to 1.3 mhaverecently been demonstrated from highly strained InGaAs–GaAsdouble-quantum-well (DQW) vertical-cavity surface-emittinglasers (VCSELs). The operation of InGaAs VCSELs at suchlong wavelengths has relied on a large detuning between thespectral positions of QW gain maximum and cavity resonance.This detuning also affects the high-temperature performance andtemperature sensitivity of such devices. In this paper, we presentand evaluate the threshold current–temperature characteristicof such lasers in relation to the gain-cavity detuning at roomtemperature (RT). For a near-zero gain peak offset from theemission wavelength at RT, the minimum threshold current isfound at the temperature where the gain peak wavelength and thecavity resonance are approximately aligned. This is well in linewith a common design rule for GaAs-based VCSELs. However,we show that this design rule fails in the case of larger gain-cavitymisalignment at RT. Instead, a minimum threshold current is obtainedconsiderably below the temperature of zero gain offset. Wepropose a conceptual model that relates the gain-cavity detuning atRT to the temperature sensitivity of the active region performance,which qualitatively describes the threshold current–temperaturecharacteristic typical of VCSELs. The results demonstrate theimportance of improving the temperature characteristic of theactive region in order to reduce the high temperature sensitivityof devices with large detuning.
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| 6. |
- Plaine, Glenn-Yves, et al.
(författare)
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Low-temperature growth of GaInNAs/GaAs quantum wells for 1.3-ÎŒm lasers using metal-organic vapor-phase epitaxy
- 2001
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Ingår i: Conference Proceedings - International Conference on Indium Phosphide and Related Materials. - Nara. - 0780367006 ; , s. 563-566
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Konferensbidrag (refereegranskat)abstract
- GaInNAs/GaAs quantum-well (QW) lasers emitting at 1.3 ÎŒm were grown using metal-organic vapor-phase epitaxy (MOVPE) in the limit of very low growth rate and temperature. The material was characterized by photoluminescence (PL) spectroscopy as well as by implementation in broad-area (BA) edge-emitting lasers. While the PL intensity was found to decrease by more than two orders of magnitude between 1175 and 1350 nm, the corresponding BA laser threshold current showed a much more modest increase. For a 1.28-ÎŒm laser the transparency current was 0.8 kA/cm2, the slope efficiency 0.24 W/A per facet and T0=100 K. Comparison between PL emission properties and BA laser performance reveled a complex relationship. A high PL intensity does not necessarily lead to low threshold-current lasers. In these cases, the FWHM seems to be the more relevant parameter for QW optimization.
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| 7. |
- Salomonsson, Fredrik, et al.
(författare)
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Low-threshold, high-temperature operation of 1.2 mu m InGaAs vertical cavity lasers
- 2001
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Ingår i: Electronics Letters. - : Institution of Engineering and Technology (IET). - 0013-5194 .- 1350-911X. ; 37:15, s. 957-958
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Tidskriftsartikel (refereegranskat)abstract
- The growth and characterisation of high performance InGaAs/GaAs quantum-well vertical cavity lasers with an emission wavelength of 1215 nm is reported. Continuous wave operation is demonstrated up to 105°C with a threshold current below 1 mA for T < 80°C. For a 2.5 μm device the room temperature threshold current, output power and slope efficiency is 0.6 mA, 0.6 mW and 0.2 W/A, respectively.
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