| 1. |
- Grahn, J. V., et al.
(författare)
-
A low-complexity 62-GHz f(T) SiGe heterojunction bipolar transistor process using differential epitaxy and in situ phosphorus-doped poly-Si emitter at very low thermal budget
- 2000
-
Ingår i: Solid-State Electronics. - 0038-1101 .- 1879-2405. ; 44:3, s. 549-554
-
Tidskriftsartikel (refereegranskat)abstract
- A low-complexity SiGe heterojunction bipolar transistor process based on differential epitaxy and in situ phosphorus doped polysilicon emitter technology is described. Silane-based chemical vapor deposition at reduced pressure was used for low-temperature SiGe epitaxy. Following SiGe epitaxy, the process temperature budget was kept very low with 900 degrees C for 10 s as the highest temperature step. A very high current gain of almost 2000 and cut off frequency of 62 GHz were achieved for a uniform 12% Ge profile. The breakdown voltage BVCEO and forward Early voltage were equal to 2.9 and 6.5 V, respectively.
|
|
| 2. |
|
|
| 3. |
- Lindberg, AC, et al.
(författare)
-
Influence of interface roughness on electrical properties of pMOSFETs with a Si/Si1-xGex channel
- 2002
-
Ingår i: Physica Scripta. - 0031-8949 .- 1402-4896. ; T101, s. 22-25
-
Konferensbidrag (refereegranskat)abstract
- The effect of epitaxial growth induced surface roughness on the electrical properties of Si/Si1-xGex channel pMOSFETs was investigated. Grown by chemical vapour deposition for selective epitaxy, the surface of the channel region was considerably rougher for the channel structures with a buried Si1-xGex layer with x = 0.16-0.20 than for those with only Si. Although the increased surface roughness, determined by means of atomic force microscopy, resulted in a doubled interface charge density the density remained low at the mid-10(10) cm(-2) eV(-1) level. Furthermore, identical transconductance values were found for the MOSFETs with and without the Si1-xGex layer. Since the inversion charge was confined predominantly within the surface Si layer, the surface roughness apparently had little effect on the transconductance. However the subthreshold slope was found to increase from 78 mV/decade for the Si-only channel MOSFEF to 105 mV/decade for the Si/Si1-xGex channel MOSFETs.
|
|
| 4. |
- Radamson, H. H., et al.
(författare)
-
Growth of high frequency SiGe heterojunction bipolar transistors structures
- 2002
-
Ingår i: Physica Scripta. - 0031-8949 .- 1402-4896. ; T101, s. 45-48
-
Tidskriftsartikel (refereegranskat)abstract
- The growth of heterojuntion bipolar transistor structures using chemical vapor deposition has been investigated. Generation of defects in selectively or nonselectively grown collector layers using arsenic as the dopant has been studied. Minimizing the defect density in SiGe base layers by optimizing the growth rate has also been investigated in detail. High resolution reciprocal lattice mapping, atomic force microscopy and secondary ion mass spectrometry have been used as the main characterization tools.
|
|
| 5. |
- SVENSSON, BG, et al.
(författare)
-
SIMS AND DEPTH PROFILING OF SEMICONDUCTOR STRUCTURES
- 1994
-
Ingår i: Nuclear Instruments and Methods in Physics Research Section B. - 0168-583X .- 1872-9584. ; 85, s. 363-369
-
Tidskriftsartikel (refereegranskat)abstract
- This paper reviews recent secondary ion mass spectrometry (SIMS) work on (i) isotope shifts in ion implantation profiles, (ii) dopant profiles in silicon and beam-induced oxidation and (iii) surface roughness and profile broadening of Al(x)Ga1-(x)As/GaAs superlattice structures. Comparison is made with other techniques, and, in particular, the issues of depth resolution and conversion between sputtering time and sample depth are emphasized.
|
|
| 6. |
|
|
