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- Fuchs, A., et al.
(författare)
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Nanowire fin field effect transistors via UV-based nanoimprint lithography
- 2006
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Ingår i: Journal of Vacuum Science & Technology B. - : American Vacuum Society. - 1071-1023 .- 1520-8567. ; 24:6, s. 2964-2967
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Tidskriftsartikel (refereegranskat)abstract
- A triple step alignment process for UV nanoimprint lithography (UV-NIL) for the fabrication of nanoscale fin field effect transistors (FinFETs) is presented. An alignment accuracy is demonstrated between two functional layers of less than 20 nm (3 sigma). The electrical characterization of the FinFETs fabricated by a full NIL process demonstrates the potential of UV-NIL for future nanoelectronic devices.
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2. |
- Lemme, Max C., 1970-, et al.
(författare)
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Triple-gate metal-oxide-semiconductor field effect transistors fabricated with interference lithography
- 2004
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Ingår i: Nanotechnology. - : IOP Publishing. - 0957-4484 .- 1361-6528. ; 15:4, s. S208-S210
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Tidskriftsartikel (refereegranskat)abstract
- In this work, n-type triple-crate metal-oxide-semiconductor field effect transistors (MOSFETs) are presented, where laser interference lithography (LIL) is integrated into a silicon-on-insulator (SOI) CMOS process to provide for the critical definition of the transistor channels. A mix and match process of optical contact lithography and LIL is developed to achieve device relevant structures. The triple-gate MOSFETs are electrically characterized to demonstrate the feasibility of this low cost fabrication process.
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