| 1. |
- L.Q.Zhang,, et al.
(författare)
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Fabrication of novel unipolar nanodiodes in InAs/AlSb for microwave detection
- 2011
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Ingår i: Infrared, Millimeter and Terahertz Waves (IRMMW-THz), 2011 36th International Conference on. - 2162-2027. - 9781457705083 ; :2-7 Oct. 2011, s. 1-2
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Konferensbidrag (refereegranskat)abstract
- Abstract—We report on the fabrication of unipolar nanodiodes into an InAs/AlxGa1-xSb quantum-well heterostructure for room temperature microwave detection up to 110 GHz. Electron-beam lithography was combined with both dry- and wet-etching, and we explored the differences in the electric and detection parameters with the two methods.
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| 2. |
- Moschetti, Giuseppe, 1982, et al.
(författare)
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Anisotropic transport properties in InAs/AlSb heterostructures
- 2010
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 97:24, s. 3-
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Tidskriftsartikel (refereegranskat)abstract
- We have investigated the anisotropic transport behavior of InAs/AlSb heterostructures grown on a(001) InP substrate. An electrical analysis showed anisotropic sheet resistance Rsh and electronmobility μn in the two dimensional electron gas (2DEG). Hall measurements demonstrated anenhanced anisotropy in μn when cooled from room temperature to 2 K. High electron mobilitytransistors exhibited 27% higher maximum drain current IDS and 23% higher peak transconductancegm when oriented along the [1-10] direction. The anisotropic transport behavior in the 2DEG wascorrelated with an asymmetric dislocation pattern observed in the surface morphology and bycross-sectional microscopy analysis of the InAs/AlSb heterostructure.
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| 3. |
- Moschetti, Giuseppe, 1982, et al.
(författare)
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Cryogenic InAs/AlSb HEMT Wideband Low-Noise IF Amplifier for Ultra-Low-Power Applications
- 2012
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Ingår i: IEEE Microwave and Wireless Components Letters. - 1558-1764 .- 1531-1309. ; 22:3, s. 144-146
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Tidskriftsartikel (refereegranskat)abstract
- A cryogenic wideband 4-8 GHz hybrid low-noise amplifier, based on a 110 nm gate length InAs/AlSb HEMT process is presented. At room temperature the three-stage amplifier exhibited a transducer gain of 29 dB and a noise temperature of 150 K with 17.6 mW power consumption. When cooled to 13 K, the amplifier showed a minimum noise temperature of 19 K at a power consumption of 6 mW (66% reduction compared to room temperature). At cryogenic temperature, the optimum drain voltage for best noise performance was reduced from 0.55 V down to 0.3 V, demonstrating the very low-power and low-voltage capabilities of InAs/AlSb HEMT based low-noise amplifiers at cryogenic temperature.
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| 4. |
- Moschetti, Giuseppe, 1982, et al.
(författare)
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Cryogenic Operation of InAs/AlSb HEMT Hybrid LNAs
- 2012
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Ingår i: 15th European Microwave Week - Space for Microwaves Conference Proceedings. Amsterdam, NETHERLANDS. OCT 28-NOV 02, 2012. - 9782874870286 ; , s. 373-376
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Konferensbidrag (refereegranskat)abstract
- The suitability of InAs/AlSb HEMTs for cryogenic ultra low-power applications is investigated. Compared to room temperature, the device exhibited significantly improved drain current saturation, higher peak transconductance and lower gate current leakage at around 10 K. When tested in a three-stage hybrid 4-8 GHz LNA under cryogenic conditions, the LNA noise figure was 0.27 dB at an extremely low power consumption of 0.6 mW per stage.
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| 5. |
- Moschetti, Giuseppe, 1982, et al.
(författare)
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True planar InAs/AlSb HEMTs with ion-implantation technique for low-power cryogenic applications
- 2013
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Ingår i: Solid-State Electronics. - : Elsevier BV. - 0038-1101 .- 1879-2405. ; 79, s. 268-273
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Tidskriftsartikel (refereegranskat)abstract
- In this paper, we report the room-temperature and cryogenic properties of true planar 110 nm InAs/AlSb HEMTs fabricated with Ar-ion isolation technology. Device isolation is generally improved and is in particular increased by four orders of magnitude at 6 K compared to 300 K. This results in improved drain current saturation, lower gate leakage current and 23% higher peak transconductance. The RF performance is significantly improved as well, with 47% higher f(T) (162 GHz) and 72% higher f(max) (155 GHz) at the low drain voltage of 0.1 V, compared to room temperature. The overall performance of the fabricated devices shows the suitability of ion implantation for the device isolation at cryogenic temperature. Furthermore, the excellent stability against oxidation and truly planar structure of these devices demonstrate great potential for highly integrated cryogenic millimeter-wave circuits in InAs/AlSb technology with ultra-low power consumption.
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| 6. |
- Rodilla, Helena, 1982, et al.
(författare)
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Monte Carlo study of the dynamic performance of isolated-gate InAs/AlSb HEMTs
- 2011
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Ingår i: Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011, Palma de Mallorca; 8 February through 11 February. - 9781424478637
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Konferensbidrag (refereegranskat)abstract
- In this work, by means of Monte Carlo simulations, the static and dynamic performance of InAs/AlSb HEMTs at low drain voltages is analyzed. A very good agreement between experimental and simulation results has been obtained not only for the static behavior, but also for small signal equivalent circuit parameters like C gs , C gd , f t and f c . Problems arise when trying to reproduce the values of g d and C ds due to the experimental frequency dispersion, leading also to discrepancies in the values obtained for the intrinsic g m and also f max . © 2011 IEEE.
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| 7. |
- Rodilla, Helena, 1982, et al.
(författare)
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Monte Carlo study of the noise performance of isolated-gate InAs/AlSb HEMTs
- 2012
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Ingår i: Semiconductor Science and Technology. - : IOP Publishing. - 1361-6641 .- 0268-1242. ; 27:1, s. 015008-
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Tidskriftsartikel (refereegranskat)abstract
- In this work, the extrinsic dynamic behavior and noise performance of a 225 nm isolated-gateInAs/AlSb high electron mobility transistor (HEMT) have been studied by means of MonteCarlo simulations. A very good agreement with experimental results has been achieved for fT .Discrepancies between experimental and simulated f max have been observed and attributed tothe experimental frequency dispersion of gd and Cds. The simulations of the intrinsic andextrinsic noise parameters indicate an excellent performance for this device (Fmin = 0.3 dB at10 GHz) even if we confirm that the presence of the native oxide under the gate induces asignificant decrease in fT and f max of around 20%, together with an increase of noise figureand noise resistance.
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| 8. |
- Vasallo, Beatriz G., et al.
(författare)
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Kink effect and noise performance in isolated-gate InAs/AlSb high electron mobility transistors
- 2012
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Ingår i: Semiconductor Science and Technology. - : IOP Publishing. - 1361-6641 .- 0268-1242. ; 27:6, s. Article Number: 065018-
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Tidskriftsartikel (refereegranskat)abstract
- The kink effect can spoil the otherwise excellent low noise performance of InAs/AlSb high electron mobility transistors. It has its origin in the pile-up of holes (generated by impact ionization) taking place mainly at the drain side of the buffer, which leads to a reduction of the gate-induced channel depletion and results in a drain current enhancement. Our results indicate that the generation of holes by impact ionization and their further recombination lead to fluctuations in the charge of the hole pile-up, which provoke an important increase in the drain current noise, even when the kink effect is hardly perceptible in the output characteristics.
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| 9. |
- Vasallo, Beatriz G., et al.
(författare)
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Monte Carlo study of impact ionization and hole transport in InAs HEMTs with isolated gate
- 2011
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Ingår i: Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011, Palma de Mallorca; 8 February 2011 through 11 February. - 9781424478637
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Konferensbidrag (refereegranskat)abstract
- We present a physical analysis of the kink effect in InAs/AlSb High Electron Mobility Transistors (HEMTs) performed by means of a semiclassical 2D ensemble Monte Carlo simulator. InAs-channel HEMTs are very susceptible to suffer from impact ionization phenomena due to the small bandgap of InAs. These processes, jointly with the associated hole transport, are at the origin of the kink effect. When the drain-to-source voltage is high enough for the onset of impact ionization, generated holes tend to accumulate at the gate-drain side of the buffer because of the valence-band energy barrier present between the buffer and the channel. Due to this pile up of positive charge the channel is further opened and the drain current increases, leading to the kink in the I-V characteristics. © 2011 IEEE.
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| 10. |
- Westlund, Andreas, 1985, et al.
(författare)
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Fabrication and DC characterization of InAs/AlSb self-switching diodes
- 2012
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Ingår i: Conference Proceedings - International Conference on Indium Phosphide and Related Materials. - 1092-8669. - 9781467317252 ; , s. 65-68
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Konferensbidrag (refereegranskat)abstract
- Fabrication and DC measurements of an InAs/AlSb self-switching diode (SSD), aimed for THz detection, is presented. An SSD with a channel width of 160 nm and a trench width of 240 nm was designed and fabricated in a process using an in situ passivation procedure of the oxidation-sensitive trench. Rectifying behavior was observed in the I-V characteristics. The device performance was relatively stable over a period of three months.
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