| 1. |
- Emerging Risk Factors, Collaboration, et al.
(författare)
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The Emerging Risk Factors Collaboration: analysis of individual data on lipid, inflammatory and other markers in over 1.1 million participants in 104 prospective studies of cardiovascular diseases
- 2007
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Ingår i: Eur J Epidemiol. - 0393-2990. ; 22:12, s. 839-69
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Tidskriftsartikel (refereegranskat)abstract
- Many long-term prospective studies have reported on associations of cardiovascular diseases with circulating lipid markers and/or inflammatory markers. Studies have not, however, generally been designed to provide reliable estimates under different circumstances and to correct for within-person variability. The Emerging Risk Factors Collaboration has established a central database on over 1.1 million participants from 104 prospective population-based studies, in which subsets have information on lipid and inflammatory markers, other characteristics, as well as major cardiovascular morbidity and cause-specific mortality. Information on repeat measurements on relevant characteristics has been collected in approximately 340,000 participants to enable estimation of and correction for within-person variability. Re-analysis of individual data will yield up to approximately 69,000 incident fatal or nonfatal first ever major cardiovascular outcomes recorded during about 11.7 million person years at risk. The primary analyses will involve age-specific regression models in people without known baseline cardiovascular disease in relation to fatal or nonfatal first ever coronary heart disease outcomes. This initiative will characterize more precisely and in greater detail than has previously been possible the shape and strength of the age- and sex-specific associations of several lipid and inflammatory markers with incident coronary heart disease outcomes (and, secondarily, with other incident cardiovascular outcomes) under a wide range of circumstances. It will, therefore, help to determine to what extent such associations are independent from possible confounding factors and to what extent such markers (separately and in combination) provide incremental predictive value.
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| 2. |
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| 3. |
- Chiodin, G, et al.
(författare)
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High surface IgM levels associate with shorter response to ibrutinib and BTK bypass in patients with CLL
- 2022
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Ingår i: Blood advances. - : American Society of Hematology. - 2473-9537 .- 2473-9529. ; 6:18, s. 5494-5504
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Tidskriftsartikel (refereegranskat)abstract
- Chronic lymphocytic leukemia (CLL) cells have variably low surface IgM (sIgM) levels/signaling capacity, influenced by chronic antigen engagement at tissue sites. Within these low levels, CLL with relatively high sIgM (CLLhigh) progresses more rapidly than CLL with low sIgM (CLLlow). During ibrutinib therapy, surviving CLL cells redistribute into the peripheral blood and can recover sIgM expression. Return of CLL cells to tissue may eventually recur, where cells with high sIgM could promote tumor growth. We analyzed time to new treatment (TTNT) following ibrutinib in 70 patients with CLL (median follow-up of 66 months) and correlated it with pretreatment sIgM levels and signaling characteristics. Pretreatment sIgM levels correlated with signaling capacity, as measured by intracellular Ca2+ mobilization (iCa2+), in vitro (r = 0.70; P < .0001). High sIgM levels/signaling strongly correlated with short TTNT (P < .05), and 36% of patients with CLLhigh vs 8% of patients with CLLlow progressed to require a new treatment. In vitro, capacity of ibrutinib to inhibit sIgM-mediated signaling inversely correlated with pretherapy sIgM levels (r = −0.68; P = .01) or iCa2+ (r = −0.71; P = .009). In patients, sIgM-mediated iCa2+ and ERK phosphorylation levels were reduced by ibrutinib therapy but not abolished. The residual signaling capacity downstream of BTK was associated with high expression of sIgM, whereas it was minimal when sIgM expression was low (P < .05). These results suggested that high sIgM levels facilitated CLL cell resistance to ibrutinib in patients. The CLL cells, surviving in the periphery with high sIgM expression, include a dangerous fraction that is able to migrate to tissue and receive proliferative stimuli, which may require targeting by combined approaches.
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| 4. |
- Pietersz, R. N. I., et al.
(författare)
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Prophylactic platelet transfusions
- 2012
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Ingår i: Vox Sanguinis. - : Wiley. - 0042-9007 .- 1423-0410. ; 103:2, s. 159-176
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Tidskriftsartikel (refereegranskat)
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| 5. |
- Ruess, H., et al.
(författare)
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HPPMS deposition from composite targets : Effect of two orders of magnitude target power density changes on the composition of sputtered Cr-Al-C thin films
- 2017
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Ingår i: Vacuum. - : PERGAMON-ELSEVIER SCIENCE LTD. - 0042-207X .- 1879-2715. ; 145, s. 285-289
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Tidskriftsartikel (refereegranskat)abstract
- The effect of target power density, substrate bias potential and substrate temperature on the thin film composition was studied. A Cr-Al-C composite target was sputtered utilizing direct current (DCMS: 2.3 W/cm(2)) and high power pulsed magnetron sputtering (HPPMS: 373 W/cm(2)) generators. At floating potential, all Cr-Al-C thin films showed similar compositions, independently of the applied target power density. However, as substrate bias potential was increased to -400 V, aluminum deficiencies by a factor of up to 1.6 for DCMS and 4.1 for HPPMS were obtained. Based on the measured ion currents at the substrate, preferential re-sputtering of Al is suggested to cause the dramatic Al depletion. As the substrate temperature was increased to 560 degrees C, the Al concentration was reduced by a factor of up to 1.9 compared to the room temperature deposition. This additional reduction may be rationalized by thermally induced desorption being active in addition to re-sputtering.
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| 6. |
- Sarakinos, Kostas, et al.
(författare)
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On the phase formation of sputtered hafnium oxide and oxynitride films
- 2010
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Ingår i: Journal of Applied Physics. - : American Institute of Physics (AIP). - 0021-8979 .- 1089-7550. ; 108:1, s. 014904-
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Tidskriftsartikel (refereegranskat)abstract
- Hafnium oxynitride films are deposited from a Hf target employing direct current magnetron sputtering in an Ar-O(2)-N(2) atmosphere. It is shown that the presence of N(2) allows for the stabilization of the transition zone between the metallic and the compound sputtering mode enabling deposition of films at well defined conditions of target coverage by varying the O(2) partial pressure. Plasma analysis reveals that this experimental strategy facilitates control over the flux of the O(-) ions which are generated on the oxidized target surface and accelerated by the negative target potential toward the growing film. An arrangement that enables film growth without O(-) ion bombardment is also implemented. Moreover, stabilization of the transition sputtering zone and control of the O(-) ion flux without N(2) addition is achieved employing high power pulsed magnetron sputtering. Structural characterization of the deposited films unambiguously proves that the phase formation of hafnium oxide and hafnium oxynitride films with the crystal structure of HfO(2) is independent from the O(-) bombardment conditions. Experimental and theoretical data indicate that the presence of vacancies and/or the substitution of O by N atoms in the nonmetal sublattice favor the formation of the cubic and/or the tetragonal HfO(2) crystal structure at the expense of the monoclinic HfO(2) one.
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| 7. |
- Eriksson, Anders, et al.
(författare)
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Influence of Ar and N2 Pressure on Plasma Chemistry, Ion Energy, and Thin Film Composition during Filtered Arc Deposition from Ti3SiC2 Cathodes
- 2014
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Ingår i: IEEE Transactions on Plasma Science. - : IEEE Press. - 0093-3813 .- 1939-9375. ; 42:11, s. 3498-3507
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Tidskriftsartikel (refereegranskat)abstract
- Arc plasma from Ti3SiC2 compound cathodes used in a filtered dc arc system has been characterized with respect to plasma chemistry and charge-state resolved ion energies. In vacuum, the plasma composition is dominated by Ti ions, with concentrations of 84.3, 9.3, and 6.4 at% for Ti, Si, and C ions, respectively. The reduced amount of Si and most notably C compared with the cathode composition is confirmed by analysis of film composition in corresponding growth experiments. The deposition of light-element deficient films is thus related to plasma generation or filter transport. The ion energy distributions in vacuum range up to 140, 90, and 70 eV for Ti, Si, and C, respectively. Corresponding average ion energies of 48, 36, and 27 eV are reduced upon introduction of gas, down to around 5 eV at 0.6 Pa Ar or 0.3 Pa N2 for all species. In vacuum, the charge state distributions of Si and C are shifted to higher values compared with corresponding elemental cathodes, likely caused by changed effective electron temperature of the plasma stemming from compound cathode material and/or by electron impact ionization in the filter. The average ion charge states are reduced upon addition of Ar, ranging between 1.97 and 1.48 for Ti, 1.91 and 1.46 for Si, and 1.25 and 1.02 for C. Similar effects are observed upon introduction of N2, though with more efficient charge state reduction with pressure. It is conceivable that the pressure-induced changes in ion energy and charge state are crucial for the film synthesis from a microstructure evolution point of view, as they affect the ion-surface interactions through supply of energy, especially when substrate biasing is employed during arc deposition from a compound cathode.
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| 8. |
- Greczynski, Grzegorz, et al.
(författare)
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Extended metastable Al solubility in cubic VAlN by metal-ion bombardment during pulsed magnetron sputtering: film stress vs subplantation
- 2017
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Ingår i: Journal of Applied Physics. - : AMER INST PHYSICS. - 0021-8979 .- 1089-7550. ; 122:2
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Tidskriftsartikel (refereegranskat)abstract
- Dynamic ion-recoil mixing of near-film-surface atomic layers is commonly used to increase the metastable solubility limit x(max) in otherwise immiscible thin film systems during physical vapor deposition. Recently, Al subplantation achieved by irradiating the film growth surface with Al+ metal-ion flux was shown to result in an unprecedented x(max) for VAlN, far above values obtained with gas ion irradiation. However, it is reasonable to assume that ion irradiation necessary for subplantation also leads to a compressive stress sigma buildup. In order to separate the effects of Al+ bombardment on sigma and x(max), and realize low-stress high-x(max) nitride alloys, we grow metastable cubic V1-xAlxN (0.17 amp;lt;= x amp;lt;= 0.74) films using reactive magnetron sputtering under different ion irradiation conditions. Al and V targets are operated in Ar/N-2 discharges employing (i) conventional DC (Ar+, N-2(+)), (ii) hybrid High-power pulsed magnetron sputtering (HIPIMS)/DC processing with one type of metal ion present (Al+ or V+/V2+), and (iii) HIPIMS with concurrent Al+ and V+/V2+ fluxes. Comparison to the ab initio calculated Al solubility limit reveals that x(max) = 0.55 achieved with V+/V2+ irradiation is entirely accountable for by stress. In contrast, Al+ fluxes provide a substantial increase in x(max) to 0.63, which is 12% higher than that expected based on the stress-induced increase in metastable solubility. Correlative stress and atom probe tomography data confirm that the metastable Al solubility enhancement is enabled by Al+ subplantation. The here proposed processing strategy allows for growth of single-phase cubic nitride alloys with significantly increased Al concentrations embodying tremendous promise for substantial improvements in high temperature oxidation resistance and mitigates the risk of stress-induced adhesive or cohesive coating failure. Published by AIP Publishing.
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| 9. |
- Greczynski, Grzegorz, et al.
(författare)
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Metal-ion subplantation: A game changer for controlling nanostructure and phase formation during film growth by physical vapor deposition
- 2020
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Ingår i: Journal of Applied Physics. - : AMER INST PHYSICS. - 0021-8979 .- 1089-7550. ; 127:18
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Tidskriftsartikel (refereegranskat)abstract
- Up until recently, thin film growth by magnetron sputtering relied on enhancing adatom mobility in the surface region by gas-ion irradiation to obtain dense layers at low deposition temperatures. However, an inherently low degree of ionization in the sputtered material flux during direct-current magnetron sputtering (DCMS), owing to relatively low plasma densities involved, prevented systematic exploration of the effects of metal-ion irradiation on the film nanostructure, phase content, and physical properties. Employing only gas-ion bombardment results in an inefficient energy and momentum transfer to the growing film surface. Also, for enhanced substrate biasing, the higher concentration of implanted noble gas atoms at interstitial lattice positions causes elevated compressive stress levels. High-power impulse magnetron sputtering (HiPIMS), however, provides controllable metal-ion ionization and, more importantly, enables the minimization of adverse gas-ion irradiation effects. The latter can be realized by the use of pulsed substrate bias applied synchronously with the metal-ion-rich portion of each HiPIMS pulse (metal-ion-synchronized HiPIMS), based on the results of time-resolved ion mass spectrometry analyses performed at the substrate position. In this way, both the metal-ion energy and the momentum can be precisely controlled for one to exploit the benefits of irradiation by metal-ions, which are also the film-forming species. Systematic studies performed in recent years using binary and ternary transition metal-based nitrides as model systems revealed new phenomena with accompanying unique and attractive film growth pathways. This Perspective paper focuses on the effects of low-mass metal-ion irradiation and their role for the nanostructure and phase control. We review basic findings and present original results from ion mass spectrometry studies and materials characterization for the effect of metal-ion subplantation. Key correlations are highlighted, which, if properly engaged, enable unprecedented control over film nanostructure and phase formation and, hence, the resulting properties. We show generalization from the findings to present a new concept for thin film growth in a hybrid HiPIMS/DCMS configuration with metal-ion-synchronized bias. Based on the results obtained for TM-based nitrides, there are no evident physical limitations preventing the extension of this deposition process concept for other materials systems or other metal-ion-based thin film growth techniques. Further exciting findings could, thus, be anticipated for the future.
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| 10. |
- Greczynski, Grzegorz, et al.
(författare)
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Native target chemistry during reactive dc magnetron sputtering studied by ex-situ x-ray photoelectron spectroscopy
- 2017
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Ingår i: Applied Physics Letters. - : AMER INST PHYSICS. - 0003-6951 .- 1077-3118. ; 111:2
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Tidskriftsartikel (refereegranskat)abstract
- We report x-ray photoelectron spectroscopy (XPS) analysis of native Ti target surface chemistry during magnetron sputtering in an Ar/N-2 atmosphere. To avoid air exposure, the target is capped immediately after sputtering with a few-nm-thick Al overlayers; hence, information about the chemical state of target elements as a function of N-2 partial pressure p(N2) is preserved. Contrary to previous reports, which assume stoichiometric TiN formation, we present direct evidence, based on core-level XPS spectra and TRIDYN simulations, that the target surface is covered by TiNx with x varying in a wide range, from 0.27 to 1.18, depending on p(N2). This has far-reaching consequences both for modelling of the reactive sputtering process and for everyday thin film growth where detailed knowledge of the target state is crucial. Published by AIP Publishing.
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