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Träfflista för sökning "WFRF:(Mu Wei 1985) "

Sökning: WFRF:(Mu Wei 1985)

  • Resultat 1-10 av 27
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1.
  • Mehta, Ankit Nalin, et al. (författare)
  • Understanding noninvasive charge transfer doping of graphene: a comparative study
  • 2018
  • Ingår i: Journal of Materials Science: Materials in Electronics. - : Springer Science and Business Media LLC. - 1573-482X .- 0957-4522. ; 29:7, s. 5239-5252
  • Tidskriftsartikel (refereegranskat)abstract
    • In this work, we systematically investigate and compare noninvasive doping of chemical vapor deposition graphene with three molecule dopants through spectroscopy and electrical conductivity techniques. Thionyl chloride shows the smallest improvement in conductivity with poor temporal and thermal stability and nitric acid induces the biggest sheet resistance reduction with modified stability. Molybdenum trioxide doping stands out, after thermal annealing, with both causing a significant sheet-resistance reduction and having superior temporal and thermal stability. These properties make it ideal for applications in advanced electronics. Theoretical studies based on the van der Waals density functional method suggest that cluster formation of molybdenum trioxide underpins the significant reduction in sheet resistance, and the stability, that arises after thermal annealing. Our comparative study clarifies charge transfer doping of graphene and brings understanding of the weak-interaction nature of such non-destructive doping of graphene. Our work also shows that we can use weak chemisorption to tailor the electronic properties of graphene, for example, to improve conductivity. This ability open up possibilities for further use of graphene in electronic interconnects, field effect transistors and other systems.
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2.
  • Wang, Wei, et al. (författare)
  • High corrosion resistance duplex fcc plus hcp cobalt based entropic alloys : An experimental and theoretical investigation
  • 2022
  • Ingår i: Materials & design. - : Elsevier BV. - 0264-1275 .- 1873-4197. ; 223, s. 111166-
  • Tidskriftsartikel (refereegranskat)abstract
    • A series of duplex fcc + hcp Co-based entropic alloys are being discovered as a new category of entropic alloys with outstanding mechanical properties, especially to overcome a typical mechanical trade-off between strength and ductility. In this work, CALPHAD-based (CALculation of PHAse Diagram) thermo-dynamic calculations were performed to facilitate alloy design and to understand corrosion behaviors. The kinetics of the electrochemical corrosion for designed alloys in typical aggressive anion Cl-was inves-tigated by electrochemical tests, including open circuit potential (OCP), polarization and cyclic polariza-tion curves, and electrochemical impedance spectroscopy (EIS). The valence state and the surface morphologies of the passive films were investigated by X-ray photoelectron spectroscopy (XPS) and atomic force microscope (AFM). High corrosion resistance materials with high strength and ductility per-formances were discovered in the present work. Except for Ni-oxides, various spinel compounds and many other oxides including Co2O3, Cr2O3, Fe2O3, MnO, MoO3, CoCr2O4, FeCr2O4, CoFe2O4, and CoMoO4 were observed in the passive films. The adsorbed and penetrated corrosive anion Cl-will be prone to breakdown the passive films with less Cr2O3, CoCr2O4 and MoO3 to form pitting corrosion (also include other localized corrosion, such as intergranular corrosion and crevice corrosion). The microstructure of the hcp martensite with the fcc matrix has played an important role in the propagation of the localized anodic dissolution in the form of cleavage and quasi-cleavage. The theoretical calculations are in good agreement with the experimental observations. This paper paves a way for the future devel-opment of high-performance Co-based entropic alloys served in some harsh environments.
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3.
  • Fan, X., et al. (författare)
  • Reliability of carbon nanotube bumps for chip on glass application
  • 2014
  • Ingår i: Proceedings of the 5th Electronics System-Integration Technology Conference, ESTC 2014. - 9781479940264 ; , s. Art. no. 6962753-
  • Konferensbidrag (refereegranskat)abstract
    • Carbon nanotubes (CNTs) are an ideal candidate material for electronic interconnects due to their extraordinary thermal, electrical and mechanical properties. In this study, densified CNT bumps utilizing the paper-mediated controlled method were applied as the interconnection for chip on glass (COG) applications, and the silicon chip with patterned CNT bumps was then flipped and bonded onto a glass substrate using anisotropic conductive adhesive (ACA) at a bonding pressure of 127.4 Mpa, 170°C for 8 seconds. The electrical properties of the COG were evaluated with the contact resistance of each bump measured using the four-point probe method. Three different structure traces, marked as Trace A, Trace B, and Trace C, were tested, respectively. Thermal cycling (-40 to 85°C, 800 cycles) and damp heat tests (85°C/85% RH, 1000 hours) were also conducted to evaluate the reliability of the CNT-COG structure. The average contact resistance of the samples was recorded during these tests, in which there was no obvious electrical failure observed after both the thermal cycling and damp heat tests. The results of these tests indicated that the COG has good reliability and the CNT bumps have promising potential applications in COG.
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4.
  • Fu, Yifeng, 1984, et al. (författare)
  • Carbon nanotube growth on different underlayers for thermal interface material application
  • 2016
  • Ingår i: IMAPS Nordic Annual Conference 2016 Proceedings. - 9781510827226
  • Konferensbidrag (refereegranskat)abstract
    • Thermal interface material (TIM) is a critical component in thermal management of high density packaging systems since both the reliability and lifetime of microsystems are dependent on how the heat is dissipated. Carbon nanotubes (CNTs) are promising candidate for development of TIMs due to their excellent thermal and mechanical properties. The thermal conductivity of CNTs can be up to 3000 W/mK in the longitudinal direction which acts as ideal heat transfer path. However, the huge interfacial thermal resistance between CNTs and contact surface hinders the exploitation of CNTs as TIMs. In this paper, we will focus on the growth of CNTs on various substrates and underlayers and analyze the interaction between catalyst and underlayer materials. Microscopic analysis is performed to characterize the quality of the CNT materials and monitor the diffusion of Fe particles into different barrier layers. Thermal conductivity of the CNT TIMs will be measured to examine the performance of the materials.
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5.
  • Fu, Yifeng, 1984, et al. (författare)
  • Post-Growth Processing of Carbon Nanotubes for Interconnect Applications - A Review
  • 2016
  • Ingår i: 2016 6th Electronic System-Integration Technology Conference (Estc). - 9781509014026 ; , s. Article no 7764713-
  • Konferensbidrag (refereegranskat)abstract
    • Interconnect is one of the most important functions of packaging technology. It delivers power and signals into and out of electronic systems. The performance and reliability of microsystems are dependent on the interconnect quality. This paper reviews the chip-level interconnects based on carbon nanotubes (CNTs), this includes their applications for both on-chip and off-chip interconnects. Various post-growth processing of CNTs, such as doping, densification, transfer, metallization, etc., for the improvement of their performance will be reviewed.
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6.
  • Jiang, Di, 1983, et al. (författare)
  • Carbon nanotube/solder hybrid structure for interconnect applications
  • 2014
  • Ingår i: Proceedings of the 5th Electronics System-Integration Technology Conference, ESTC 2014. - 9781479940264 ; , s. Art. no. 6962751-
  • Konferensbidrag (refereegranskat)abstract
    • A carbon nanotube (CNT)/Solder hybrid bump structure is proposed in this work in order to overcome the drawbacks of high CNT resistivity while retaining the advantages of CNTs in terms of interconnect reliability. Lithographically defined hollow CNT moulds are grown by thermal chemical vapor deposition (TCVD). The space inside the CNT moulds is filled up with Sn-Au-Cu (SAC) solder spheres of around 10 μm in diameter. This CNT/Solder hybrid material is then reflowed and transferred onto target indium coated substrate. The reflow melts the small solder spheres into large single solder balls thus forming a hybrid interconnect bump together with the surrounding densified CNT walls, which the CNT and the solder serve as resistors in parallel. The electrical resistance of such a CNT/Solder structure is measured to be around 6 folds lower than pure CNT bumps.
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7.
  • Jiang, Di, 1983, et al. (författare)
  • Embedded Fin-Like Metal/CNT Hybrid Structures for Flexible and Transparent Conductors
  • 2016
  • Ingår i: Small. - : Wiley. - 1613-6810 .- 1613-6829. ; 12:11, s. 1521-1526
  • Tidskriftsartikel (refereegranskat)abstract
    • In this paper, an embedded fin-like metal-coated carbon nanotube (Fin-M/CNT) structure is demonstrated for flexible and transparent conductor wire applications. Embedded in a polydimethylsiloxane polymeric substrate, Fin-M/CNT wires with a minimum width of 5 μm and a minimum pitch of 10 μm have been achieved. Direct current resistances of single Fin-M/CNT wires, where the supporting CNT structures have been covered by Ti/Al/Au metal coatings of different thicknesses, have been measured. The high aspect ratio of the fin-like structures not only improves the adhesion between the wires and the polymeric substrate, but also yields a low resistance at a small surface footprint. In addition, transparent Fin-M/CNT grid lines with hexagonal patterns, with a sheet resistance of as low as 45 Ω sq−1, have been achieved at an optical transmittance of 88%. The robustness of the Fin-M/CNT structures has been demonstrated in bending tests up to 500 cycles and no significant changes in wire resistances are observed.
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8.
  • Jiang, Di, 1983, et al. (författare)
  • Vertically stacked carbon nanotube-based interconnects for through silicon via application
  • 2015
  • Ingår i: IEEE Electron Device Letters. - 0741-3106 .- 1558-0563. ; 36:5, s. 499-501
  • Tidskriftsartikel (refereegranskat)abstract
    • Stacking of silicon chips with carbon nanotube (CNT)-based through-silicon vias (TSVs) is experimentally demonstrated. Polymer filling is used to improve the transfer quality of CNTs into pre-etched silicon holes. Special hexagonal CNTs are designed to achieve high aspect ratio (10:1) CNT vias. TSVs filled with closely packed CNTs show a highly linear dc I - V response. The proposed process works at room temperature, which makes it compatible with existing device fabrication flow.
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9.
  • Li, Rongbin, et al. (författare)
  • Nonlinearity in mass spectrometry for quantitative multi-component gas analysis in reaction processes
  • 2022
  • Ingår i: Analytica Chimica Acta. - : Elsevier BV. - 0003-2670 .- 1873-4324. ; 1194, s. 339412-
  • Tidskriftsartikel (refereegranskat)abstract
    • Quantitative mass spectrometry analysis for multi-component gas phase reaction processes is a typical multi-input and multi-output (MIMO) nonlinear problem. Conventional calibration and analytical methods that are based on the common hypothesis of linearity of the detected signal and gas parameters, could result in misjudgment of the reaction mechanism and inaccuracy in the determination of the reaction kinetics. In the present work, theoretical derivations based on equivalent characteristic spectrum analysis (ECSA (R)), discrete mode experiments and continuous mode experiments were performed, and the nonlinearity of mass spectrometry was confirmed. It is only possible to determine the physical parameters such as flow rate and/or concentrations of gases by properly handling the nonlinearity of mass spectrometry. In such case comprehensive reaction mechanisms and even the kinetics of the process can be accurately characterized. Well-handled nonlinear mass spectrometry analysis ensures a reliable and highly accurate identification for the multi-component gas phase reaction processes, and ensures high signal-to-noise ratio for detecting the small-flow gases at a wide range of carrier gas flow.
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10.
  • Li, X., et al. (författare)
  • Reliability of Carbon Nanotube Bumps for Chip on Film Application
  • 2013
  • Ingår i: Proceedings of the IEEE Conference on Nanotechnology. - 1944-9399 .- 1944-9380. - 9781479906758 ; , s. 845-848
  • Konferensbidrag (refereegranskat)abstract
    • Carbon nanotubes (CNTs) are an ideal candidate for electrical interconnects due to their extraordinary thermal, electrical and mechanical properties. In this work, as-densified CNT bumps were applied as chip on film (COF) interconnection material. A silicon chip with patterned CNT bumps was bonded onto a flexible substrate using anisotropic conductive adhesive (ACA) with bonding pressure, at 127.4 MPa, 170 °C and for 8 seconds. The electrical properties of this structure were evaluated by measuring the contact resistance of each bump using the four-point probe method. Thermal cycling (-40∼85°C, 1000 cycles) and damp heat tests (85°C/85% RH, 1000 hours) were conducted to evaluate the reliabilities of the CNT-COF structure bonded with ACA. The average contact resistances of two samples used for the reliability tests were 226 mΩ and 260mΩ. No electrical failure was observed after the damp heat test and only two were observed after the thermal cycling test. The average contact resistance was increased only 15.7% and 13.8%, respectively, after the thermal cycling and the damp heat tests. © 2013 IEEE.
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