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| 4. |
- Nilsson, PO, et al.
(författare)
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Electronic structure of ultrathin Ge layers buried in Si(100)
- 2001
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 64:11
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Tidskriftsartikel (refereegranskat)abstract
- Ultrathin Ge wetting layers, buried in Si(100), have been investigated by soft x-ray emission spectroscopy. With the assistance of ab initio density functional theory calculations the electronic structure of the layers could be established. In particular Si bulk states, splitted and resonating in the Ge layers, were identified.
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| 5. |
- Nilsson, PO, et al.
(författare)
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Electronic structure of ultrathin Ge layers buried in Si(100) - art. no. 115306
- 2001
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Ingår i: PHYSICAL REVIEW B. - : AMERICAN PHYSICAL SOC. - 0163-1829. ; 6411:11, s. 5306-+ Language: English
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Tidskriftsartikel (refereegranskat)abstract
- Ultrathin Ge wetting layers, buried in Si(100), have been investigated by soft x-ray emission spectroscopy. With the assistance of ab initio density functional theory calculations the electronic structure of the layers could be established. In particular
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| 6. |
- Svegmark, K, et al.
(författare)
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Comparison of potato amylopectin starches and potato starches - influence of year and variety
- 2002
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Ingår i: Carbohydrate Polymers. - 0144-8617. ; 47:4, s. 331-340
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Tidskriftsartikel (refereegranskat)abstract
- Starches from three potato varieties and their respective transformants producing amylopectin starch were studied over a period of 3 years. The gelatinisation, swelling and dispersion properties were studied using differential scanning calorimetry (DSC), X-ray diffraction, swelling capacity measurements and a Brabender Viscograph. The potato amylopectin starches (PAP) exhibited higher endothermic temperatures as well as higher enthalpies than the normal potato starches (NPS). PAP samples gave rise to an exceptionally sharp viscosity peak during gelatinisation and a relatively low increase in viscosity on cooling. Swelling capacity measurements showed that PAP granules swelled more rapidly, and that the dispersion of the swollen granules occurred at a lower temperature (85 degreesC). Analysis of variance (ANOVA) also revealed that the year influenced the DSC results, and that both year and variety affect some of the Brabender parameters. Furthermore, the PAP and NPS samples were subjected to heat-moisture treatment at three different moisture levels, and the Brabender viscosity properties were studied. (C) 2002 Elsevier Science Ltd. All rights reserved.
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| 7. |
- Agui, A, et al.
(författare)
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Direct observation of interface effects of thin AlAs(100) layers buried in GaAs
- 2000
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Ingår i: APPLIED SURFACE SCIENCE. - : ELSEVIER SCIENCE BV. - 0169-4332. ; 166:1-4, s. 309-312
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Tidskriftsartikel (refereegranskat)abstract
- A study of the electronic structure of ultrathin AlAs layers buried in GaAs(100) and their interfaces is presented. Al L-2,L-3 soft-X-ray-emission (SXE) spectra from the AlAs layers were measured. The spectra show distinct thickness-dependent features, wh
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| 8. |
- ANDERSSON, CBM, et al.
(författare)
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SPUTTERED AND ANNEALED INAS(111)OVER-BAR - AN UNRECONSTRUCTED SURFACE
- 1994
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Ingår i: Surface Science. - : Elsevier BV. - 0039-6028 .- 1879-2758. ; 307, s. 885-889
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Tidskriftsartikel (refereegranskat)abstract
- The electronic structure of the InAs(111BAR)1 X 1 surface has been investigated by angle resolved photoelectron spectroscopy along the symmetry lines GAMMAKBAR, GAMMAMBAR, and GAMMAMBAR of the surface Brillouin zone. The bulk valence band structure was calculated using a combination of the linear augmented plane-wave method and the relativistic augmented plane-wave method. We have projected the theoretical bulk band structure onto the surface Brillouin zone to separate surface states from surface resonances. Two surface related structures, S1 and S2, have been observed and their E(i)(k(parallel-to)) dispersions are established. Both S1 and S2 show the symmetry of the 1 X 1 surface Brillouin zone, which is consistent with the observed 1 X 1 LEED pattern. We identify S1 as the As-derived dangling bond state, and S2 is associated with the backbonds connecting the As atoms in the surface layer with the underlying In layer.
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| 10. |
- Aronsson, Lars, 1955-, et al.
(författare)
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Ack Värmeland
- 2012. - 1
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Ingår i: Värmländska landskap. - Karlstad : Karlstad University Press. - 9789186637040 ; , s. 473-486
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Bokkapitel (övrigt vetenskapligt/konstnärligt)
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