| 1. |
- Edoff, Marika, 1965-, et al.
(författare)
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Ultrathin CIGS Solar Cells with Passivated and Highly Reflective Back Contacts – : Results from the ARCIGS-M Consortium
- 2019
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Ingår i: Proceedings of 36th European Photovoltaic Solar Energy Conference and Exhibition. ; , s. 597-600
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Konferensbidrag (övrigt vetenskapligt/konstnärligt)abstract
- In this work, we report results from the EU-funded project ARCIGS-M. The project started in 2016 and aims to reduce the use of indium and gallium by enabling the use of very thin Cu(In,Ga)Se2 (CIGS) layers while retaining high efficiency and developing innovative low-cost steel substrates as alternatives to glass. In the project, reflective layers containing TCO´s and silver have successfully been used to enhance the reflective properties of the rear contact. In addition, passivation layers based on alumina (Al2O3) deposited by atomic layer deposition (ALD) have been found to yield good passivation of the rear contact. Since the alumina layers are dielectric, perforation of these layers is necessary to provide adequate contacting. The design of the perforation patterns has been investigated by a combination of modeling and experimental verification by electron beam lithography. In parallel a nano-imprint lithography (NIL) process is further developed for scale-up and application in prototype modules. Advanced optoelectrical characterization supported by modeling is used to fill in the missing gaps in optical and electrical properties, regarding CIGS, interfaces and back contact materials.
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| 2. |
- Goffard, Julie, et al.
(författare)
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Light Trapping in Ultrathin CIGS Solar Cells withNanostructured Back Mirrors
- 2017
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Ingår i: IEEE Journal of Photovoltaics. - 2156-3381 .- 2156-3403. ; 7:5, s. 1433-1441
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Tidskriftsartikel (refereegranskat)abstract
- Novel architectures for light trapping in ultrathinCu(In,Ga)Se2 (CIGS) solar cells are proposed and numericallyinvestigated. They are composed of a flat CIGS layer withnanostructured back mirrors made of highly reflective metals.Multi-resonant absorption is obtained for two different patternsof nanostructured mirrors. It leads to a dramatic increase in theshort-circuit current predicted for solar cells with very thin CIGSlayers. We analyze the resonance phenomena and the density ofphotogenerated carriers in the absorber. We discuss the impactof the material used for the buffer layer (CdS and ZnS) and theback mirror (Mo, Cu, Au, and Ag). We investigate various CIGSthicknesses from 100 to 500 nm, and we compare our numericalresults with experimental data taken from the literature. Wepredict a short-circuit current of Jsc = 33.6 mA/cm2 for a realisticsolar cell made of a 200-nm-thick CIGS absorber with a coppernanostructured mirror. It opens a way toward ultrathin CIGSsolar cells with potential conversion efficiencies up to 20%.
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| 3. |
- Gouillart, Louis, et al.
(författare)
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Interface engineering of ultrathin Cu(In,Ga)Se2 solar cells on reflective back contacts
- 2021
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Ingår i: Progress in Photovoltaics. - : John Wiley & Sons. - 1062-7995 .- 1099-159X. ; 29:2, s. 212-221
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Tidskriftsartikel (refereegranskat)abstract
- Cu(In,Ga)Se-2-based (CIGS) solar cells with ultrathin (<= 500 nm) absorber layers suffer from the low reflectivity of conventional Mo back contacts. Here, we design and investigate ohmic and reflective back contacts (RBC) made of multilayer stacks that are compatible with the direct deposition of CIGS at 500 degrees C and above. Diffusion mechanisms and reactions at each interface and in the CIGS layer are carefully analyzed by energy dispersive X-ray (EDX)/scanning transmission electron microscopy (STEM). It shows that the highly reflective silver mirror is efficiently encapsulated in ZnO:Al layers. The detrimental reaction between CIGS and the top In2O3:Sn (ITO) layer used for ohmic contact can be mitigated by adding a 3 nm thick Al2O3 layer and by decreasing the CIGS coevaporation temperature from 550 degrees C to 500 degrees C. It also improves the compositional grading of Ga toward the CIGS back interface, leading to increased open- circuit voltage and fill factor. The best ultrathin CIGS solar cell on RBC exhibits an efficiency of 13.5% (+1.0% as compared to our Mo reference) with a short-circuit current density of 28.9 mA/cm(2) (+2.6 mA/cm(2)) enabled by double-pass absorption in the 510 nm thick CIGS absorber. RBC are easy to fabricate and could benefit other photovoltaic devices that require highly reflective and conductive contacts subject to high temperature processes.
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| 4. |
- Gouillart, Louis, et al.
(författare)
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Reflective Back Contacts for Ultrathin Cu(In,Ga)Se2-Based Solar Cells
- 2020
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Ingår i: IEEE Journal of Photovoltaics. - 2156-3381 .- 2156-3403. ; 10:1, s. 250-254
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Tidskriftsartikel (refereegranskat)abstract
- We report on the development of highly reflective back contacts (RBCs) made of multilayer stacks for ultrathin CIGS solar cells. Two architectures are compared: they are made of a silver mirror coated either with a single layer of In 2 O 3 :Sn (ITO) or with a bilayer of ZnO:Al/ITO. Due to the improvement of CIGS rear reflectance, both back contacts result in a significant external quantum efficiency enhancement, in agreement with optical simulations. However, solar cells fabricated with Ag/ITO back contacts exhibit a strong shunting behavior. The key role of the ZnO:Al layer to control the morphology of the top ITO layer and to avoid silver diffusion through the back contact is highlighted. For a 500-nm-thick CIGS layer, this optimized RBC leads to a best cell with a short-circuit current of 27.8 mA/cm 2 (+2.2 mA/cm 2 as compared to a Mo back contact) and a 12.2%-efficiency (+2.5% absolute).
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| 5. |
- Gouillart, Louis, et al.
(författare)
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Ultrathin Cu(In,Ga)Se2 solar cells with Ag-based reflective back contacts
- 2020
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Ingår i: 2020 47th IEEE Photovoltaic Specialists Conference (PVSC). - 9781728161150 - 9781728161167 ; , s. 1481-1484
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Konferensbidrag (refereegranskat)abstract
- We developed a highly reflective back contact for Cu(In,Ga)Se 2 solar cells based on silver encapsulated in a TCOs stack, compatible with substrate configuration. We demonstrated ultrathin (500 nm) Cu(In,Ga)Se 2 solar cells with 13.5% efficiency and state-of-the-art JSC=28.9 mA/cm2,2.7 mA/cm 2 more than the reference cell on molybdenum. We also demonstrated a 530 nm-thick (Ag, Cu)(In,Ga)Se 2 solar cell on Mo with state-of-the-art efficiency (14.9%) and remarkably high V OC (741 mV) and FF (81.8%). This result coupled with a highly reflective back contact for improved J SC , has the potential for a 500 nm-thick (Ag, Cu)(In,Ga)Se 2 solar cell with an 18% efficiency.
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| 6. |
- Kim, Min Seo, et al.
(författare)
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Global burden of peripheral artery disease and its risk factors, 1990-2019 : a systematic analysis for the Global Burden of Disease Study 2019
- 2023
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Ingår i: The Lancet Global Health. - : Elsevier. - 2214-109X. ; 11:10, s. E1553-E1565
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Tidskriftsartikel (refereegranskat)abstract
- Background: Peripheral artery disease is a growing public health problem. We aimed to estimate the global disease burden of peripheral artery disease, its risk factors, and temporospatial trends to inform policy and public measures.Methods: Data on peripheral artery disease were modelled using the Global Burden of Disease, Injuries, and Risk Factors Study (GBD) 2019 database. Prevalence, disability-adjusted life years (DALYs), and mortality estimates of peripheral artery disease were extracted from GBD 2019. Total DALYs and age-standardised DALY rate of peripheral artery disease attributed to modifiable risk factors were also assessed.Findings: In 2019, the number of people aged 40 years and older with peripheral artery disease was 113 million (95% uncertainty interval [UI] 99 center dot 2-128 center dot 4), with a global prevalence of 1 center dot 52% (95% UI 1 center dot 33-1 center dot 72), of which 42 center dot 6% was in countries with low to middle Socio-demographic Index (SDI). The global prevalence of peripheral artery disease was higher in older people, (14 center dot 91% [12 center dot 41-17 center dot 87] in those aged 80-84 years), and was generally higher in females than in males. Globally, the total number of DALYs attributable to modifiable risk factors in 2019 accounted for 69 center dot 4% (64 center dot 2-74 center dot 3) of total peripheral artery disease DALYs. The prevalence of peripheral artery disease was highest in countries with high SDI and lowest in countries with low SDI, whereas DALY and mortality rates showed U-shaped curves, with the highest burden in the high and low SDI quintiles.Interpretation: The total number of people with peripheral artery disease has increased globally from 1990 to 2019. Despite the lower prevalence of peripheral artery disease in males and low-income countries, these groups showed similar DALY rates to females and higher-income countries, highlighting disproportionate burden in these groups. Modifiable risk factors were responsible for around 70% of the global peripheral artery disease burden. Public measures could mitigate the burden of peripheral artery disease by modifying risk factors.
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| 7. |
- Lindahl, Johan, 1984-
(författare)
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Atomic layer deposition of zinc tin oxide buffer layers for Cu(In,Ga)Se2 solar cells
- 2015
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Doktorsavhandling (övrigt vetenskapligt/konstnärligt)abstract
- The aim of this thesis is to provide an in-depth investigation of zinc tin oxide, Zn1-xSnxOy or ZTO, grown by atomic layer deposition (ALD) as a buffer layer in Cu(In,Ga)Se2 (CIGS) solar cells. The thesis analyzes how changes in the ALD process influence the material properties of ZTO, and how these in turn affect the performance of CIGS solar cells.It is shown that ZTO grows uniformly and conformably on CIGS and that the interface between ZTO and CIGS is sharp with little or no interdiffusion between the layers. The band gap and conduction band energy level of ZTO are dependent both on the [Sn]/([Zn]+[Sn]) composition and on the deposition temperature. The influence by changes in composition is non-trivial, and the highest band gap and conduction band energy level are obtained at a [Sn]/([Zn]+[Sn]) composition of 0.2 at 120 °C. An increase in optical band gap is observed at decreasing deposition temperatures and is associated with quantum confinement effects caused by a decrease in crystallite size. The ability to change the conduction band energy level of ZTO enables the formation of suitable conduction band offsets between ZTO and CIGS with varying Ga-content.It is found that 15 nm thin ZTO buffer layers are sufficient to fabricate CIGS solar cells with conversion efficiencies up to 18.2 %. The JSC is in general 2 mA/cm2 higher, and the VOC 30 mV lower, for cells with the ZTO buffer layer as compared to cells with the traditional CdS buffer layer. In the end comparable efficiencies are obtained for the two different buffer layers. The gain in JSC for the ZTO buffer layer is associated with lower parasitic absorption in the UV-blue region of the solar spectrum and it is shown that the JSC can be increased further by making changes to the other layers in the traditional CdS/i-ZnO/ZnO:Al window layer structure. The ZTO is highly resistive, and it is found that the shunt preventing i-ZnO layer can be omitted, which further increases the JSC. Moreover, an additional increase in JSC is obtained by replacing the sputtered ZnO:Al front contact with In2O3 deposited by ALD. The large gain in JSC for the ZTO/In2O3 window layer stack compensates for the lower VOC related to the ZTO buffer layer, and it is demonstrated that the ZTO/In2O3 window layer structure yields 0.6 % (absolute) higher conversion efficiency than the CdS/i-ZnO/ZnO:Al window layer structure.
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| 8. |
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