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- Jansson, Mattias, et al.
(författare)
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High-Performance Multiwavelength GaNAs Single Nanowire Lasers
- 2024
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Ingår i: ACS Nano. - : AMER CHEMICAL SOC. - 1936-0851 .- 1936-086X. ; 18:2, s. 1477-1484
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Tidskriftsartikel (refereegranskat)abstract
- In this study, we report a significant enhancement in the performance of GaNAs-based single nanowire lasers through optimization of growth conditions, leading to a lower lasing threshold and higher operation temperatures. Our analysis reveals that these improvements in the laser performance can be attributed to a decrease in the density of localized states within the material. Furthermore, we demonstrate that owing to their excellent nonlinear optical properties, these nanowires support self-frequency conversion of the stimulated emission through second harmonic generation (SHG) and sum-frequency generation (SFG), providing coherent light emission in the cyan-green range. Mode-specific differences in the self-conversion efficiency are revealed and explained by differences in the light extraction efficiency of the converted light caused by the electric field distribution of the fundamental modes. Our work, therefore, facilitates the design and development of multiwavelength coherent light generation and higher-temperature operation of GaNAs nanowire lasers, which will be useful in the fields of optical communications, sensing, and nanophotonics.
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| 2. |
- Nakama, Kaito, et al.
(författare)
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GaAs/GaInNAs core-multishell nanowires with a triple quantum-well structure emitting in the telecommunication range
- 2023
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 123:8
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Tidskriftsartikel (refereegranskat)abstract
- Semiconducting nanowires (NWs) fabricated from III-V materials have gained significant attention for their application in advanced optoelectronic devices. Here, the growth of GaAs/GaInNAs/GaAs core-multishell NWs with a triple quantum-well structure, having about 2% N and 20% In, is reported. The NWs are grown via selective area plasma-assisted molecular beam epitaxy on patterned Si(111) substrates with SiO2 mask holes. The nucleation and growth of the GaAs nanowires core are carried out by Ga-induced vapor-liquid-solid growth at the open holes. Finely controlled, vertically aligned, regular core-multishell NWs with uniform wire length and diameter are obtained with a 96% yield and targeted nitrogen concentrations of 0%, 2%, and 3%. The GaInNAs NWs exhibit a spectral red shift relative to the GaAs NWs peak. Their emission wavelength increases with the N content reaching up to 1.26 mu m, which makes them a promising tool in telecommunication light sources.
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