| 1. |
- Adiba, Adiba, et al.
(författare)
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Multilevel resistive switching with negative differential resistance in Al/ NiO/ZnFe2O4/ITO ReRAM device
- 2023
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Ingår i: Physica. B, Condensed matter. - : Elsevier. - 0921-4526 .- 1873-2135. ; 654
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Tidskriftsartikel (refereegranskat)abstract
- The Resistive Random Access Memory devices have emerged as an energy-efficient alternative to Von Neumann computers by enabling in-memory computing. Here we demonstrate bipolar resistive switching in thin films of Nickel oxide (NiO) and Zinc Ferrite (ZFO) using a simple Al/NiO/ZFO/ITO configuration, making them a possible candidate for the next generation memory devices. The fabricated device demonstrated excellent resistive switching behavior with high endurance for up to 1000 cycles, good retention for more than 10(4) s, and a good resistance ratio of HRS to LRS similar to 10(2). Ohmic conduction was observed in the LRS, while in the HRS, along with ohmic conduction, space charge limited current (SCLC) and Schottky mechanisms were observed. Besides the LRS and HRS, a number of stable intermediate resistance states can also be obtained during the RESET process using different stop voltages, which makes the current device a multilevel resistive switching device.
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| 2. |
- Amombo Noa, Francoise M., et al.
(författare)
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A Hexagon Based Mn(II) Rod Metal-Organic Framework – Structure, SF6 Gas Sorption, Magnetism and Electrochemistry
- 2023
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Ingår i: Chemical Communications. - : Royal Society of Chemistry. - 1359-7345 .- 1364-548X.
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Tidskriftsartikel (refereegranskat)abstract
- A manganese(II) metal-organic framework based on the hexatopic hexakis(4-carboxyphenyl)benzene, cpb6-: [Mn3(cpb)(dmf)3], was solvothermally prepared showing a Langmuir area of 438 m2/g, rapid uptake of sulfur hexafluoride (SF6) as well as electrochemical and magnetic properties, while single crystal diffraction reveals an unusual rod-MOF topology.
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| 3. |
- Amombo Noa, Francoise Mystere, 1988, et al.
(författare)
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A hexagon based Mn(ii) rod metal-organic framework - structure, SF 6 gas sorption, magnetism and electrochemistry
- 2023
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Ingår i: Chemical Communications. - : Royal Society of Chemistry (RSC). - 1364-548X .- 1359-7345. ; 59:15, s. 2106-2109
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Tidskriftsartikel (refereegranskat)abstract
- A manganese(ii) metal-organic framework based on the hexatopic hexakis(4-carboxyphenyl)benzene, cpb6−: [Mn3(cpb)(dmf)3], was solvothermally prepared showing a Langmuir area of 438 m2 g−1, rapid uptake of sulfur hexafluoride (SF6) as well as electrochemical and magnetic properties, while single crystal diffraction reveals an unusual rod-MOF topology.
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| 4. |
- Pandey, Vidit, et al.
(författare)
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Bipolar resistive switching with multiple intermediate resistance states in Mn3O4 thin film
- 2023
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Ingår i: Materials Today Communications. - : Elsevier. - 2352-4928. ; 34
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Tidskriftsartikel (refereegranskat)abstract
- The research on resistive switching phenomenon-based memory devices has become an important topic in computing and data storage technology. In this study, bipolar resistive switching based Al/Mn3O4/FTO RRAM device with multi-level resistance states has been investigated. The current-voltage and resistance-temperature analyses were performed to explore the behavior and conduction mechanisms of the fabricated RRAM device. A gradual RESET was obtained during the switching from a high resistance state to a low resistance state with three intermediate resistance states at different stop voltages. The program/erase and data retention tests were performed to investigate the stability, uniform switching, and non-volatile behavior of the fabricated device. A schematic representation of the formation of conducting filamentary path between the top and bottom electrodes has also been illustrated. The fabricated RRAM device has the potential to fulfill the requirements for application in high-density non-volatile memory devices.
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