| 1. |
- Thanh Le, Thanh, et al.
(författare)
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Diarylether-Amino Acid Conjugates as New Class of Anticancer Agents
- 2023
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Ingår i: CHEMISTRYSELECT. - : Wiley. - 2365-6549. ; 8:28
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Tidskriftsartikel (refereegranskat)abstract
- Diarylether (DE) is a privileged structure found in both natural products and synthetic compounds including small molecule drugs. We present the synthesis of a series of 13 new DE-amino acid conjugates which were screened for cancer cells antiproliferation activity. Structure-activity relationship suggests ester and phenyl groups in DE-Phe-OEt 4 c are important for the activity. Compound 4 c inhibited strongly MCF-7 3D tumor sphere formation and have favourable calculated physical chemical properties according to Lipinski's rule of 5. Docking study suggests estrogen receptor and/ or 3a-HSD type 3 protein could be the target(s) for anticancer activity of this class of compounds.
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| 2. |
- Tran, Minh Quan, et al.
(författare)
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MPC-Based Coordinated Voltage Control in LV Distribution Systems: A Case Study in Chalmers Campus Network
- 2023
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Ingår i: Conference Proceedings - 2023 IEEE Asia Meeting on Environment and Electrical Engineering, EEE-AM 2023.
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Konferensbidrag (refereegranskat)abstract
- This paper presents detailed analysis results of a model predictive control (MPC)-based coordinated voltage control demonstrated in a real low voltage network, the Chalmers campus in Sweden. First, the modeling of the MPC is presented, and the state space mode is obtained by linearization of the power flow equation around the operation point. Thus, an updated voltage vector in the grid is calculated through the sensitivity gain corresponding to reactive power deviation in the grid. Second, the developed MPC model is integrated into an Internet of Things (IoT) platform developed under the European FlexiGrid project. The state measurements in the Chalmers campus network are collected through the IoT platform as the input for the MPC model. Then, the optimal setpoints for distributed energy resources (DERs) are calculated and sent to DERs via the IoT platform. Lastly, onsite demonstration results are analyzed, showing the performance of the MPC-based voltage control in low-voltage distribution systems.
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| 3. |
- Tran, Trung Thai, et al.
(författare)
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Virtual Oscillator based Hierarchical Control Strategy for Multi-mode Operation of Microgrids
- 2022
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Ingår i: IEEE PES Innovative Smart Grid Technologies Conference Europe. ; 2022-October
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Konferensbidrag (refereegranskat)abstract
- One of the most important challenges in controlling a Microgrid is to enable a multi-mode operation with a smooth change from different modes. Recently, hierarchical control is considered as an effective approach to control and manage a Microgrid. This paper proposes a compatible hierarchical control strategy, leveraging the superior characteristics of Andronov-Hopf Oscillator, that enables both grid-connected and islanded operation, as well as seamless, reliable transition between operation modes. The proposed control strategy includes a PI-based Power Tracking Control loop, a Power Sharing Control loop using average consensus approach, a PR-based Synchronization Control, and a Fault Initiated Islanding Detection based on wideband, online impedance estimation. The results in MATLAB/Simulink are provided to validate the effectiveness of the proposed strategy.
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| 4. |
- Binz, Hans, et al.
(författare)
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Method for enhancing the immunogenicity of an immunogenic compound or hapten, and use thereof for preparing vaccines
- 1994
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Patent (populärvet., debatt m.m.)abstract
- The present invention relates to a process for improving the immunogenicity of an immunogen, an antigen or a hapten, when it is administered to a host, independently of the mode of administration, characterized in that the said antigen or hapten is coupled covalently to a support molecule in order to form a complex, and in that this support molecule is a polypeptide fragment which is able to bind specifically to mammalian serum albumin. The invention also relates to the use, as a medicament, of the product which can be obtained in this way.
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| 5. |
- Binz, Hans, et al.
(författare)
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Respiratory syncytial virus protein g expressed on bacterial membrane
- 1994
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Patent (populärvet., debatt m.m.)abstract
- A method for preparing a peptide or protein, wherein (a) a DNA sequence coding for a heterologous polypeptide on a peptide sequence between amino acid residues 130 and 230 of respiratory syncytial virus protein G, sub-groups A and B, or a peptide sequence at least 80 % homologous thereto, and (b) means enabling the expression of the polypeptide on the bacterial membrane surface, are inserted into a bacterium which is not pathogenic for mammals. The resulting conjugate polypeptide and a live bacterium expressing same, pharmaceutical compositions containing them and their use for preparing a vaccine, as well as a DNA sequence coding for said polypeptide, are also disclosed.
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| 6. |
- de Lazzari, Mattia, 1996, et al.
(författare)
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Design and manufacture procedures of phantoms for hyperthermia QA guidelines
- 2023
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Ingår i: 17th European Conference on Antennas and Propagation, EuCAP 2023.
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Konferensbidrag (refereegranskat)abstract
- Clinical outcome of hyperthermia therapy (HT) is strongly correlated with the thermal dose delivered into the tumor. Achieving of prescribed temperature distribution within the target area should therefore the primary objective of any HT treatment. The Quality Assurance (QA) guidelines developed in past decennium by ESHO-TC establish the physical characterization and prescribe the safeguards to ensure that the clinically used equipment is capable of achieving adequate temperatures. The direct implementation of these guidelines is however limited by the lack of suitable phantom materials. To address this issue, we propose (i) a novel material to mimic fat tissue and (ii) a standardized phantom verification of phased array applicators for deep HT in Head and Neck (H&N) and extremities. In particular, (i) a fat-phantom composed of an ethylcellulose based oleogel exhibit equivalent dielectric and thermal properties with the required mechanical stability even at elevated temperatures, while (ii) the standardized phantom provides the means to capture the thermal profiles to evaluate the performance indicators in reproducible manner. Both phantoms thus bears a great potential for their extensive use in QA procedures.
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| 7. |
- Duc, Tran Thien, et al.
(författare)
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Capture cross section of electron-irradiation-induced defects in bulk GaN grown by halide vapor phase epitaxy
- 2014
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Annan publikation (övrigt vetenskapligt/konstnärligt)abstract
- Electron-irradiation-induced defects in GaN grown by halide vapor phase epitaxy is studied by deep level transient spectroscopy in which the capture cross section and its temperature dependence of the deep levels was determined by the filling pulse method. Before irradiation, one trap level, labelled ET4 (EC – 0.244 eV), was observed. After performing electron irradiation with an energy of 2 MeV at a fluence of 5 × 1016 cm-2, four deep trap levels, labelled ET1 (EC – 0.178 eV), ET2 (EC – 0.181 eV), ET3 (EC – 0.256 eV) and ET5 appeared. After annealing at 650K for 2 hours, only two irradiation induced deep levels, ET1 and ET3, were observed. By varying the rate windows, the temperature dependence of the capture cross section of the two deep levels ET1 and ET2 and ET3 was studied. The temperature behavior of ET2 and ET3 capture cross section is independent on temperature whereas the capture cross section of the deep level ET1 depends strongly on the temperature. It is suggested that electron capturing is govern by a multiphonon process to the level ET1.
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| 8. |
- Duc, Tran Thien, et al.
(författare)
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Radiation-induced defects in GaN bulk grown by halide vapor phase epitaxy
- 2014
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Ingår i: Applied Physics Letters. - : American Institute of Physics (AIP). - 0003-6951 .- 1077-3118. ; 105:10, s. 102103-
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Tidskriftsartikel (refereegranskat)abstract
- Defects induced by electron irradiation in thick free-standing GaN layers grown by halide vapor phase epitaxy were studied by deep level transient spectroscopy. In as-grown materials, six electron traps, labeled D2 (E-C-0.24 eV), D3 (E-C-0.60 eV), D4 (E-C-0.69 eV), D5 (E-C-0.96 eV), D7 (E-C-1.19 eV), and D8, were observed. After 2MeV electron irradiation at a fluence of 1 x 10(14) cm(-2), three deep electron traps, labeled D1 (E-C-0.12 eV), D5I (E-C-0.89 eV), and D6 (E-C-1.14 eV), were detected. The trap D1 has previously been reported and considered as being related to the nitrogen vacancy. From the annealing behavior and a high introduction rate, the D5I and D6 centers are suggested to be related to primary intrinsic defects.
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| 9. |
- Duc Tran, Thien, et al.
(författare)
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Deep levels in as-grown and electron-irradiated n-type GaN studied by deep level transient spectroscopy and minority carrier transient spectroscopy
- 2016
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Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 119:9
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Tidskriftsartikel (refereegranskat)abstract
- By minority carrier transient spectroscopy on as-grown n-type bulk GaN produced by halide vapor phase epitaxy (HVPE) one hole trap labelled H1 (EV + 0.34 eV) has been detected. After 2 MeV-energy electron irradiation, the concentration of H1 increases and at fluences higher than 5×1014 cm-2, a second hole trap labelled H2 is observed. Simultaneously, the concentration of two electron traps, labelled T1 (EC - 0.12 eV) and T2 (EC - 0.23 eV) increases. By studying the increase of the concentration versus electron irradiation fluences, the introduction rate of T1 and T2 using 2 MeV-energy electrons was determined to 7X10-3 cm-1 and 0.9 cm-1, respectively. Due to the low introduction rate of T1 and the low threading dislocation density in the HVPE bulk GaN material, it is suggested that the defect is associated with a primary defect decorating extended structural defects. The high introduction rate of the trap H1 suggests that the H1 defect is associated with a primary intrinsic defect or a complex.
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| 10. |
- Duc Tran, Thien, et al.
(författare)
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Electronic properties of defects in high-fluence electron irradiated bulk GaN
- 2016
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Ingår i: Physica status solidi. B, Basic research. - : John Wiley & Sons. - 0370-1972 .- 1521-3951. ; 253:3, s. 521-526
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Tidskriftsartikel (refereegranskat)abstract
- Using deep level transient spectroscopy, deep levels and capture cross sections of defects introduced by high-fluence electron irradiation of thick halide vapour phase epitaxy grown GaN has been studied. After irradiation with 2 MeV electrons to a high-fluence of 5×1016 cm-2, four deep trap levels, labelled T1 (EC – 0.13 eV), T2 (EC – 0.18 eV), T3 (EC – 0.26 eV) T4 and a broad band of peaks consisting of at least two levels could be observed. These defects, except T1 and T3, were annealed out after annealing at 650 K for 2 hours. The capture cross section is found to be temperature independent for T2 and T3, while T1 shows an decresing capture cross section with increasing temperature, suggesting that electron capturing to this deep level is governed by a cascade capturing process.
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