| 1. |
- Estarán, Jose, et al.
(författare)
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140/180/204-Gbaud OOK Transceiver for Inter- and Intra-Data Center Connectivity
- 2019
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Ingår i: Journal of Lightwave Technology. - : IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC. - 0733-8724 .- 1558-2213. ; 37:1, s. 178-187
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Tidskriftsartikel (refereegranskat)abstract
- We report on an on-off keying intensity-modulation and direct-detection C-band optical transceiver capable of addressing all datacenter interconnect environments at well-beyond 100Gbaud. For this, the transmitter makes use of two key InP technologies: a 2:1 double heterojunction bipolar transistor selector multiplexer and a monolithically integrated distributed-feedback laser traveling-wave electro-absorption modulator, both exceeding 100-GHz of 3-dB analog bandwidth. A pre-amplified 110-GHz PIN photodiode prior to a 100-GHz analog-to-digital converter complete the ultra-high bandwidth transceiver module; the device under study. In the experimental work, which discriminates between intra- and inter-data center scenarios (dispersion unmanaged 120, 560, 960m; and dispersion-managed 10, and 80km of standard singlemode fiber), we evaluate the bit-error rate evolution against the received optical power at 140, 180, and 204Gbaud on-off keying for different equalization configurations (adaptive linear filter with and without the help of short-memory sequence estimation) and forward error correction schemes (hard-decision codes with 7% and 20% overhead); drawing conclusions from the observed system-level limitations of the respective environments at this ultra-high baudrate, as well as from the operation margins and sensitivity metrics. From the demonstration, we highlight three results: successful operation with >6-dB sensitivity margin below the 7% error-correction at 140Gbaud over the entire 100m-80km range with only linear feed-forward equalization. Then the transmission of a 180Gbaud on-off-keying carrier over 80km considering 20% error-correction overhead. And finally, 10-km communication at 204Gbaud on-off keying with up to 6dB sensitivity margin, and regular 7%-overhead error-correction.
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| 2. |
- Mardoyan, Haik, et al.
(författare)
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204-GBaud On-Off Keying Transmitter for Inter-Data Center Communications
- 2018
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Ingår i: Optical Fiber Communication Conference Postdeadline Papers OSA Technical Digest (online) (Optical Society of America, 2018), paper Th4A.4. - : Optics Info Base, Optical Society of America. - 9781943580392
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Konferensbidrag (refereegranskat)abstract
- We demonstrate an on-off keyed transmitter with direct detection, at record symbol rates of 204Gbaud and 140Gbaud, over 10km and 80km, respectively, powered by a high-speed InP-based 2:1 selector and travelling-wave electro-absorption laser-modulator.
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| 3. |
- Ozolins, Oskars, et al.
(författare)
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140 Gbaud On-Off Keying Links in C-Band for Short-Reach Optical Interconnects
- 2018
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Ingår i: Proceedings European Conference on Optical Communication, ECOC 2018. - : Institute of Electrical and Electronics Engineers (IEEE).
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Konferensbidrag (refereegranskat)abstract
- We demonstrate 140 Gbaud intensity modulated direct detection dispersion-uncompensated links with Mach Zehnder modulator and distributed feedback travelling-wave electro-absorption modulator over 5500 and 960 meters of standard single mode fibre, respectively, enabled by compact packaged ultra-high speed InP-based 2:1-Selector.
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| 4. |
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| 5. |
- Spyropoulou, Maria, et al.
(författare)
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The path to 1Tb/s and beyond datacenter interconnect networks : Technologies, components, and subsystems
- 2021
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Ingår i: Proceedings of SPIE - The International Society for Optical Engineering. - : SPIE. - 9781510642591
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Konferensbidrag (refereegranskat)abstract
- Modern IoT and 5G applications are driving the growth of Internet traffic and impose stringent requirements to datacenter operators for keeping pace with the increasing bandwidth and low-latency demands. At the same time, datacenters suffer from increasing number of interconnections dictating the deployment of novel architectures and high-radix switches. The ratification of 400 GbE standard is driving the market of optical transceivers nevertheless, a technology upgrade will be soon necessary to meet the tremendous traffic growth. In this paper, we present the development of 800 Gb/s and 1Tb/s optical transceivers migrating to 100 Gbaud per lane and employing wafer-scale bonding of InP membranes and InP-DHBT electronics as well as advanced co-packaging schemes. The InP membrane platform is also exploited for the development of novel ultra-fast optical space switches based on a modular architecture design for scaling to large number of I/O ports.
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