| 1. |
- Aghaeipour, Mahtab, et al.
(författare)
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Optical response of wurtzite and zinc blende GaP nanowire arrays
- 2015
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Ingår i: Optics Express. - 1094-4087. ; 23:23, s. 30177-30187
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Tidskriftsartikel (refereegranskat)abstract
- We compare the optical response of wurtzite and zinc blende GaP nanowire arrays for varying geometry of the nanowires. We measure reflectance spectra of the arrays and extract from these measurements the absorption in the nanowires. To support our experimental findings and to allow for more detailed investigations of the optical response of the nanowire arrays than possible in experiments, we perform electromagnetic modeling. This modeling highlights the validity of the extraction of the absorptance from reflectance spectra, as well as limitations of the extraction due to anti-reflection properties of the nanowires. In our combined experimental and theoretical study, we find for both zinc blende and wurtzite nanowires an absorption resonance that can be tuned into the ultraviolet by decreasing the diameter of the nanowires. This peak stops blue-shifting with decreasing nanowire diameter at a wavelength of approximately 330 nm for zinc blende GaP. In contrast, for the wurtzite GaP nanowires, the resonance continues blue-shifting at 310 nm for the smallest diameters we succeeded in fabricating. We interpret this as a difference in refractive index between wurtzite and zinc blende GaP in this wavelength region. These results open up for optical applications through resonant absorption in the visible and ultraviolet wavelength regions with both zinc blende and wurtzite GaP nanowire arrays. Notably, zinc blende and wurtzite GaP support resonant absorption deeper into the ultraviolet region than previously found for zinc blende and wurtzite InP and InAs. (C) 2015 Optical Society of America
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| 2. |
- Aghaeipour, Mahtab, et al.
(författare)
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Tunable absorption resonances in the ultraviolet for InP nanowire arrays
- 2014
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Ingår i: Optics Express. - 1094-4087. ; 22:23, s. 29204-29212
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Tidskriftsartikel (refereegranskat)abstract
- The ability to tune the photon absorptance spectrum is an attracting way of tailoring the response of devices like photodetectors and solar cells. Here, we measure the reflectance spectra of InP substrates patterned with arrays of vertically standing InP nanowires. Using the reflectance spectra, we calculate and analyze the corresponding absorptance spectra of the nanowires. We show that we can tune absorption resonances for the nanowire arrays into the ultraviolet by decreasing the diameter of the nanowires. When we compare our measurements with electromagnetic modeling, we generally find good agreement. Interestingly, the remaining differences between modeled and measured spectra are attributed to a crystal-phase dependence in the refractive index of InP. Specifically, we find indication of significant differences in the refractive index between the modeled zinc-blende InP nanowires and the measured wurtzite InP nanowires in the ultraviolet. We believe that such crystal-phase dependent differences in the refractive index affect the possibility to excite optical resonances in the large wavelength range of 345 < lambda < 390 nm. To support this claim, we investigated how resonances in nanostructures can be shifted in wavelength by geometrical tuning. We find that dispersion in the refractive index can dominate over geometrical tuning and stop the possibility for such shifting. Our results open the door for using crystal-phase engineering to optimize the absorption in InP nanowire-based solar cells and photodetectors. (C) 2014 Optical Society of America
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| 3. |
- Hjort, Martin, et al.
(författare)
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Electronic and Structural Differences between Wurtzite and Zinc Blende InAs Nanowire Surfaces: Experiment and Theory
- 2014
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Ingår i: ACS Nano. - : American Chemical Society (ACS). - 1936-086X .- 1936-0851. ; 8:12, s. 12346-12355
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Tidskriftsartikel (refereegranskat)abstract
- We determine the detailed differences in geometry and band structure between wurtzite (Wz) and zinc blende (Zb) InAs nanowire (NW) surfaces using scanning tunneling microscopy/spectroscopy and photoemission electron microscopy. By establishing unreconstructed and defect-free surface facets for both Wz and Zb, we can reliably measure differences between valence and conduction band edges, the local vacuum levels, and geometric relaxations to the few-millielectronvolt and few-picometer levels, respectively. Surface and bulk density functional theory calculations agree well with the experimental findings and are used to interpret the results, allowing us to obtain information on both surface and bulk electronic structure. We can thus exclude several previously proposed explanations for the observed differences in conductivity of Wz-Zb NW devices. Instead, fundamental structural differences at the atomic scale and nanoscale that we observed between NW surface facets can explain the device behavior.
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| 4. |
- Jain, Vishal, et al.
(författare)
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Bias-dependent spectral tuning in InP nanowire-based photodetectors
- 2017
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Ingår i: Nanotechnology. - Bristol : IOP Publishing. - 0957-4484 .- 1361-6528. ; 28:11
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Tidskriftsartikel (refereegranskat)abstract
- Nanowire array ensembles contacted in a vertical geometry are extensively studied and considered strong candidates for next generations of industrial scale optoelectronics. Key challenges in this development deal with optimization of the doping profile of the nanowires and the interface between nanowires and transparent top contact. Here we report on photodetection characteristics associated with doping profile variations in InP nanowire array photodetectors. Bias-dependent tuning of the spectral shape of the responsivity is observed which is attributed to a Schottky-like contact at the nanowire-ITO interface. Angular dependent responsivity measurements, compared with simulated absorption spectra, support this conclusion. Furthermore, electrical simulations unravel the role of possible self-gating effects in the nanowires induced by the ITO/SiO x wrap-gate geometry. Finally, we discuss possible reasons for the observed low saturation current at large forward biases.
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| 5. |
- Mårsell, Erik, et al.
(författare)
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Spatial Control of Multiphoton Electron Excitations in InAs Nanowires by Varying Crystal Phase and Light Polarization
- 2018
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Ingår i: Nano Letters. - : American Chemical Society (ACS). - 1530-6984 .- 1530-6992. ; 18:2, s. 907-915
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Tidskriftsartikel (refereegranskat)abstract
- We demonstrate the control of multiphoton electron excitations in InAs nanowires (NWs) by altering the crystal structure and the light polarization. Using few-cycle, near-infrared laser pulses from an optical parametric chirped-pulse amplification system, we induce multiphoton electron excitations in InAs nanowires with controlled wurtzite (WZ) and zincblende (ZB) segments. With a photoemission electron microscope, we show that we can selectively induce multiphoton electron emission from WZ or ZB segments of the same wire by varying the light polarization. Developing ab initio GW calculations of first to third order multiphoton excitations and using finite-difference time-domain simulations, we explain the experimental findings: While the electric-field enhancement due to the semiconductor/vacuum interface has a similar effect for all NW segments, the second and third order multiphoton transitions in the band structure of WZ InAs are highly anisotropic in contrast to ZB InAs. As the crystal phase of NWs can be precisely and reliably tailored, our findings open up for new semiconductor optoelectronics with controllable nanoscale emission of electrons through vacuum or dielectric barriers.
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| 6. |
- Nylund, Gustav, et al.
(författare)
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Designed Quasi-1D Potential Structures Realized in Compositionally Graded InAs1-xPx Nanowires.
- 2016
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Ingår i: Nano Letters. - : American Chemical Society (ACS). - 1530-6992 .- 1530-6984.
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Tidskriftsartikel (refereegranskat)abstract
- III-V semiconductor heterostructures are important components of many solid-state optoelectronic devices, but the ability to control and tune the electrical and optical properties of these structures in conventional device geometries is fundamentally limited by the bulk dimensionality and the inability to accommodate lattice-mismatched material combinations. Here we demonstrate how semiconductor nanowires may enable the creation of arbitrarily shaped one-dimensional potential structures for new types of designed device functionality. We describe the controlled growth of stepwise compositionally graded InAs1-xPx heterostructures defined along the axes of InAs nanowires, and we show that nanowires with sawtooth-shaped composition profiles behave as near-ideal unipolar diodes with ratchet-like rectification of the electron transport through the nanowires, in excellent agreement with simulations. This new type of designed quasi-1D potential structure represents a significant advance in band gap engineering and may enable fundamental studies of low-dimensional hot-carrier dynamics, in addition to constituting a platform for implementing novel electronic and optoelectronic device concepts.
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| 7. |
- Nylund, Gustav
(författare)
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Studies of Nanowire Devices Enabled by Advanced Nanofabrication
- 2015
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Doktorsavhandling (övrigt vetenskapligt/konstnärligt)abstract
- This thesis explores the possibility of using advanced device geometries and heterostructure engineering to manipulate, control, and study the electrical and optical properties of semiconductor nanowires. The first part of the thesis investigates the use of different gate-all-around architectures for creating new types of gate-controlled nanowire devices, primarily intended for fundamental studies of semiconductor physics. Complex fabrication schemes for creating laterally oriented single-nanowire transistors with fully wrapped gates, as well as vertically oriented multi-nanowire devices with transparent wrap-gates for studies of gate-controlled photoluminescence, are described. Nanowire transistors with semi-wrapped gates are shown to operate very close to the fundamental thermal limit, and gate-controlled ambipolar conduction is observed. A nanowire field-effect diode is realized using two semi-wrapped gates placed on a single nanowire, creating a device with gate-tunable current rectification properties in which gate-controlled electric fields induce a p-n junction in a doping-free part of the nanowire. The second part of the thesis describes the fabrication and characterization of a nanowire ratchet, in which a stepwise compositionally graded heterostructure sequence is used to produce a sawtooth-shaped electrostatic potential along the nanowire axis, leading to strong rectification of electron transport, in excellent agreement with theory and simulations. This structure is interesting for fundamental studies of ratchet physics, directed charge transport, and hot-carrier dynamics in low-dimensional semiconductor systems, and also as a platform for realizing novel optoelectronic device concepts. When combined, the ability to create designed nanowire potential structures with wrap-gate control over charge carrier behavior opens up many possibilities for future studies of the unique properties of semiconductor nanowires.
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| 8. |
- Nylund, Gustav, et al.
(författare)
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Transparently Wrap-Gated Semiconductor Nanowire Arrays For Studies Of Gate-Controlled Photoluminescence
- 2013
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Ingår i: Physics of Semiconductors. - : AIP. - 0094-243X .- 1551-7616. ; 1566, s. 427-428
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Konferensbidrag (refereegranskat)abstract
- We present a technique to measure gate-controlled photoluminescence (PL) on arrays of semiconductor nanowire (NW) capacitors using a transparent film of Indium-Tin-Oxide (ITO) wrapping around the nanowires as the gate electrode. By tuning the wrap-gate voltage, it is possible to increase the PL peak intensity of an array of undoped InP NWs by more than an order of magnitude. The fine structure of the PL spectrum reveals three subpeaks whose relative peak intensities change with gate voltage. We interpret this as gate-controlled state-filling of luminescing quantum dot segments formed by zincblende stacking faults in the mainly wurtzite NW crystal structure.
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| 9. |
- Storm, Kristian, et al.
(författare)
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Dual-gate induced InP nanowire diode
- 2011
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Ingår i: Physics of Semiconductors: 30th International Conference on the Physics of Semiconductors. - : AIP. - 1551-7616 .- 0094-243X. ; 1399, s. 279-280
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Konferensbidrag (refereegranskat)abstract
- Semiconductor devices are heavily dependent on dopant incorporation in order to control the electrical properties. In this paper we investigate the possibility of using gates wrapped around a nanowire (NW) channel as a way of tuning the Fermi level position, in certain cases removing the need for dopants and providing a more dynamical way of setting the device properties. InP NW devices with omega gates are fabricated, and a p-n junction is formed in a nominally intrinsic NW channel. In order to further increase the electrostatic control of the channel and other device properties, vertical devices are discussed as a promising way of implementing this type of device.
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| 10. |
- Storm, Kristian, et al.
(författare)
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Gate-Induced Fermi Level Tuning in InP Nanowires at Efficiency Close to the Thermal Limit.
- 2011
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Ingår i: Nano Letters. - : American Chemical Society (ACS). - 1530-6992 .- 1530-6984. ; 11, s. 1127-1130
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Tidskriftsartikel (refereegranskat)abstract
- As downscaling of semiconductor devices continues, one or a few randomly placed dopants may dominate the characteristics. Furthermore, due to the large surface-to-volume ratio of one-dimensional devices, the position of the Fermi level is often determined primarily by surface pinning, regardless of doping level. In this work, we investigate the possibility of tuning the Fermi level dynamically with wrap-around gates, instead of statically setting it using the impurity concentration. This is done using Ω-gated metal-oxide-semiconductor field-effect transistors with HfO(2)-capped InP nanowires as channel material. It is found that induced n-type devices exhibit an optimal inverse subthreshold slope of 68 mV/decade. By adjusting the growth and process parameters, it is possible to produce ambipolar devices, in which the Fermi level can be tuned across the entire band gap, making it possible to induce both n-type and p-type conduction.
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