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- Karlsson, Krister, 1961-, et al.
(författare)
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Final-state effects in photoemission from metal-semiconductor interfaces
- 1991
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Ingår i: Physical Review Letters. - : American Physical Society. - 0031-9007 .- 1079-7114. ; 67:2, s. 236-239
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Tidskriftsartikel (refereegranskat)abstract
- In this Letter we stress the importance of final-state effects in photoelectron spectroscopy. In particular, we address the problem of Schottky-barrier formation, as studied via core-level shifts in photoemission. We have calculated the shift of the core-level distribution when a semiconductor surface is covered with a metal, using a wave-vector-dependent image-screening model. We conclude that final-state effects, which are generally neglected in this context, are in fact quite important. This conclusion is supported by experimental observations reported in the literature. © 1991 The American Physical Society.
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- Karlsson, Krister, 1961-, et al.
(författare)
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Theoretical investigation of energy shifts at the GaAs/Au interface
- 1988
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Ingår i: Solid State Communications. - : Elsevier. - 0038-1098 .- 1879-2766. ; 67:4, s. 339-342
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Tidskriftsartikel (refereegranskat)abstract
- We have used an image screening model to calculate the shift of the Ga(3d−1) core-level distribution when a GaAs surface is covered with metal. Using the GaAs bulk dielectric constant we find a shift of 0.1 (0.18) eV with a mean free path of 25 (8) Å. These shifts are comparable to the measured ones,1 indicating that final-state (image) screening represents an important part of core-level shifts in the vicinity of the interface.
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