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- Peterziel, H, et al.
(författare)
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Drug sensitivity profiling of 3D tumor tissue cultures in the pediatric precision oncology program INFORM
- 2022
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Ingår i: NPJ precision oncology. - : Springer Science and Business Media LLC. - 2397-768X. ; 6:1, s. 94-
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Tidskriftsartikel (refereegranskat)abstract
- The international precision oncology program INFORM enrolls relapsed/refractory pediatric cancer patients for comprehensive molecular analysis. We report a two-year pilot study implementing ex vivo drug sensitivity profiling (DSP) using a library of 75–78 clinically relevant drugs. We included 132 viable tumor samples from 35 pediatric oncology centers in seven countries. DSP was conducted on multicellular fresh tumor tissue spheroid cultures in 384-well plates with an overall mean processing time of three weeks. In 89 cases (67%), sufficient viable tissue was received; 69 (78%) passed internal quality controls. The DSP results matched the identified molecular targets, including BRAF, ALK, MET, and TP53 status. Drug vulnerabilities were identified in 80% of cases lacking actionable (very) high-evidence molecular events, adding value to the molecular data. Striking parallels between clinical courses and the DSP results were observed in selected patients. Overall, DSP in clinical real-time is feasible in international multicenter precision oncology programs.
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- Kaniewska, M, et al.
(författare)
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Charge carrier traffic at self-assembled Ge quantum dots on Si
- 2013
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Ingår i: Solid-State Electronics. - : Elsevier BV. - 0038-1101. ; 83, s. 99-106
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Tidskriftsartikel (refereegranskat)abstract
- Germanium quantum dots (QDs) have been characterized by deep level transient spectroscopy (DLTS) and capacitance versus voltage (C-V) technique. Two types of dots, grown by molecular beam epitaxy (MBE) at different temperatures, were investigated and assessed with respect to morphological properties. Samples with dots grown at 350 degrees C, were designed as n(++)-p-p(++) silicon junctions with the QDs positioned in the depleted p-region, while a second type of samples were Shottky diodes based on medium doped silicon with the QDs prepared at 550 degrees C and positioned in the Schottky depletion region. From the combined results of temperature scanned and frequency scanned DLTS, and by varying hole filling levels of the QD potentials, the energy distribution of states in the QD potentials were investigated. A wider distribution was found for the low-temperature QDs, probably related with a larger variation of size. By using a technique for separating tunneling and thermal hole emission, the average thermal activation energy for emitting holes to the valence band was found close to 0.40 eV for both types of QDs.
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- von Haartman, M., et al.
(författare)
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Impact of strain and channel orientation on the low-frequency noise performance of Si n- and pMOSFETs
- 2007
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Ingår i: Solid-State Electronics. - : Elsevier BV. - 0038-1101 .- 1879-2405. ; 51:5, s. 771-777
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Tidskriftsartikel (refereegranskat)abstract
- Mobility and low-frequency (LF) noise were studied in tensile strained Si n- and pMOSFETs fabricated on relaxed SiGe virtual substrates. Both the impact of the channel orientation ((110) or (100) on (100) Si) and the tensile strain were carefully investigated. Two types of virtual substrates were used; a thin relaxed SiGe layer (20% Ge) and a thick one (27% Ge). The strained Si nMOSFETs fabricated on the thin substrate showed similar LF noise level as in the reference devices, whereas the thick substrate caused severely increased LF noise in the nMOSFETs. The latter was linked to the higher Ge concentration and explained by possible misfit dislocations and increased defect densities, likely resulting from strain relaxation caused by ion implantation damage. On the other hand, considerably lower LF noise was achieved in the pMOSFETs on the thick SiGe. The channel orientation was not found to have a significant influence on the LF noise performance in any of the studied devices.
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- Hållstedt, Julius, et al.
(författare)
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Leakage current reduction in 80 nm biaxially strained Si nMOSFETs on in-situ doped SiGe virtual substrates
- 2007
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Ingår i: ESSDERC 2007 - Proceedings of the 37th European Solid-State Device Research Conference 2008. - 9781424411238 ; , s. 319-322
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Konferensbidrag (refereegranskat)abstract
- We present a comprehensive study of biaxially strained (up to similar to 3 GPa stress) Si nMOSFETs down to 80 nm gatelength. Well behaved 80 nm devices with expected strain-induced electrical enhancement were demonstrated. Special emphasis was put on investigation of substrate junction leakage and source to drain leakage. In-situ doped wells and channel profiles demonstrated superior substrate junction leakage for the relaxed SiGe substrates compared to conventional implantation. The source to drain leakage in 80 nm devices was effectively reduced by increment of channel doping and rotation of the channel direction.
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- Kao, Mu-Rong, et al.
(författare)
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Substrate Specificities of Variants of Barley (1,3)- and (1,3;1,4)-β-d-Glucanases Resulting from Mutagenesis and Segment Hybridization
- 2024
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Ingår i: Biochemistry. - : American Chemical Society (ACS). - 0006-2960 .- 1520-4995. ; 63:9, s. 1194-1205
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Tidskriftsartikel (refereegranskat)abstract
- Barley (1,3;1,4)-β-d-glucanase is believed to have evolved from an ancestral monocotyledon (1,3)-β-d-glucanase, enabling the hydrolysis of (1,3;1,4)-β-d-glucans in the cell walls of leaves and germinating grains. In the present study, we investigated the substrate specificities of variants of the barley enzymes (1,3;1,4)-β-d-glucan endohydrolase [(1,3;1,4)-β-d-glucanase] isoenzyme EII (HvEII) and (1,3)-β-d-glucan endohydrolase [(1,3)-β-d-glucanase] isoenzyme GII (HvGII) obtained by protein segment hybridization and site-directed mutagenesis. Using protein segment hybridization, we obtained three variants of HvEII in which the substrate specificity was that of a (1,3)-β-d-glucanase and one variant that hydrolyzed both (1,3)-β-d-glucans and (1,3;1,4)-β-d-glucans; the wild-type enzyme hydrolyzed only (1,3;1,4)-β-d-glucans. Using substitutions of specific amino acid residues, we obtained one variant of HvEII that hydrolyzed both substrates. However, neither protein segment hybridization nor substitutions of specific amino acid residues gave variants of HvGII that could hydrolyze (1,3;1,4)-β-d-glucans; the wild-type enzyme hydrolyzed only (1,3)-β-d-glucans. Other HvEII and HvGII variants showed changes in specific activity and their ability to degrade the (1,3;1,4)-β-d-glucans or (1,3)-β-d-glucans to larger oligosaccharides. We also used molecular dynamics simulations to identify amino-acid residues or structural regions of wild-type HvEII and HvGII that interact with (1,3;1,4)-β-d-glucans and (1,3)-β-d-glucans, respectively, and may be responsible for the substrate specificities of the two enzymes.
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