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- Bleken, Bjørn Tore L., et al.
(författare)
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Unit cell thick nanosheets of zeolite H-ZSM-5 : Structure and activity
- 2013
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Ingår i: Topics in catalysis. - : Springer Science and Business Media LLC. - 1022-5528 .- 1572-9028. ; 56:9-10, s. 558-566
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Tidskriftsartikel (refereegranskat)abstract
- nosheets of zeolite H-ZSM-5 were synthesized and characterized by X-ray diffraction, transmission electron microscopy (TEM), N2- physisorption, FT-IR spectroscopy, 27Al and 29Si MAS NMR spectroscopy in addition to catalytic testing in conversion of methanol to hydrocarbons (MTH). It was found that Rietveld analysis, involving anisotropic broadening parameters, gave average crystallite dimensions in good agreement with TEM images. The selectivities in MTH is intact in the mesoporous nanosheet H-ZSM-5 with the largest difference being a higher C3/C2 ratio compared to regular H-ZSM-5.
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- Redekop, Evgeniy A., et al.
(författare)
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Synchronizing gas injections and time-resolved data acquisition for perturbation-enhanced APXPS experiments
- 2021
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Ingår i: Review of Scientific Instruments. - : AIP Publishing. - 0034-6748 .- 1089-7623. ; 92:4
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Tidskriftsartikel (refereegranskat)abstract
- An experimental approach is described in which well-defined perturbations of the gas feed into an Ambient Pressure X-ray Photoelectron Spectroscopy (APXPS) cell are fully synchronized with the time-resolved x-ray photoelectron spectroscopy data acquisition. These experiments unlock new possibilities for investigating the properties of materials and chemical reactions mediated by their surfaces, such as those in heterogeneous catalysis, surface science, and coating/deposition applications. Implementation of this approach, which is termed perturbation-enhanced APXPS, at the SPECIES beamline of MAX IV Laboratory is discussed along with several experimental examples including individual pulses of N2 gas over a Au foil, a multi-pulse titration of oxygen vacancies in a pre-reduced TiO2 single crystal with O2 gas, and a sequence of alternating precursor pulses for atomic layer deposition of TiO2 on a silicon wafer substrate.
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