| 1. |
- Bourassa, Alexandre, et al.
(författare)
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Entanglement and control of single nuclear spins in isotopically engineered silicon carbide
- 2020
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Ingår i: Nature Materials. - : NATURE RESEARCH. - 1476-1122 .- 1476-4660. ; 19:12, s. 1319-1325
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Tidskriftsartikel (refereegranskat)abstract
- Isotope engineering of silicon carbide leads to control of nuclear spins associated with single divacancy centres and extended electron spin coherence. Nuclear spins in the solid state are both a cause of decoherence and a valuable resource for spin qubits. In this work, we demonstrate control of isolated(29)Si nuclear spins in silicon carbide (SiC) to create an entangled state between an optically active divacancy spin and a strongly coupled nuclear register. We then show how isotopic engineering of SiC unlocks control of single weakly coupled nuclear spins and present an ab initio method to predict the optimal isotopic fraction that maximizes the number of usable nuclear memories. We bolster these results by reporting high-fidelity electron spin control (F = 99.984(1)%), alongside extended coherence times (Hahn-echoT(2) = 2.3 ms, dynamical decouplingT(2)(DD) > 14.5 ms), and a >40-fold increase in Ramsey spin dephasing time (T-2*) from isotopic purification. Overall, this work underlines the importance of controlling the nuclear environment in solid-state systems and links single photon emitters with nuclear registers in an industrially scalable material.
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| 2. |
- Davidsson, Joel, et al.
(författare)
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Discovery of atomic clock-like spin defects in simple oxides from first principles
- 2024
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Ingår i: Nature Communications. - : NATURE PORTFOLIO. - 2041-1723. ; 15:1
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Tidskriftsartikel (refereegranskat)abstract
- Virtually noiseless due to the scarcity of spinful nuclei in the lattice, simple oxides hold promise as hosts of solid-state spin qubits. However, no suitable spin defect has yet been found in these systems. Using high-throughput first-principles calculations, we predict spin defects in calcium oxide with electronic properties remarkably similar to those of the NV center in diamond. These defects are charged complexes where a dopant atom - Sb, Bi, or I - occupies the volume vacated by adjacent cation and anion vacancies. The predicted zero phonon line shows that the Bi complex emits in the telecommunication range, and the computed many-body energy levels suggest a viable optical cycle required for qubit initialization. Notably, the high-spin nucleus of each dopant strongly couples to the electron spin, leading to many controllable quantum levels and the emergence of atomic clock-like transitions that are well protected from environmental noise. Specifically, the Hanh-echo coherence time increases beyond seconds at the clock-like transition in the defect with 209Bi. Our results pave the way to designing quantum states with long coherence times in simple oxides, making them attractive platforms for quantum technologies. Recently, long spin coherence times have been predicted for spin defects in simple oxides. Here, by using high-throughput first-principles calculations, the authors identify promising spin defects in CaO, with electronic properties similar to those of NV centers but with longer coherence times.
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